Abstract: Disclosed are a flat panel type image display device of a clear borderless design without a case defining an external appearance of an image display device, and a method for manufacturing the same. The flat panel type image display device includes an image display panel to display an image, a panel guide including a panel fixing portion, to which the image display panel is attached, and a guide frame formed in a dual coupling structure, the panel fixing portion being configured to move together with the guide frame in at least one direction of x, y, and z-axis directions, and a bottom case formed to cover an opened back surface of the panel guide comprising a back surface of the image display panel, the bottom case being fixed to an inner side surface of the panel guide.

Abstract: A circuit for generating a data I/O control signal used in a semiconductor memory apparatus comprises a delay block for generating a delay signal having a relatively short delay value and a delay signal having a relatively long delay values, and a selection block for selecting any one of the delay signals according to an operational mode. The selection block selects an output signal of the first delay unit in a high-speed operation mode and selects an output signal of the second delay unit in a low-speed operation mode.

Abstract: A mobile communication terminal may be made smaller by using an internal antenna and a conductive layer. The conductive layer is spaced apart from the antenna by a fixed gap, and the conductive layer may be located either internally or externally to the terminal housing. The addition of the conductive layer provides a second resonant frequency in a higher frequency band than a first resonant frequency. Because the conductive layer has a relative smaller amount of radiation and is more directly affected by a human body than the internal antenna with a relatively larger amount of radiation, the performance characteristics of the terminal can be increased by a corresponding amount.

Abstract: A method for forming a storage node electrode of a semiconductor device, includes the steps of: forming a contact plug in an interlayer insulation film on a semiconductor substrate; sequentially stacking etch stop films, a sacrificed insulation film, a polysilicon hard mask and a reflection preventive film on the whole surface of the interlayer insulation film; forming an opening by etching the hard mask, the sacrificed insulation film and the etch stop films to remove the reflection preventive film to obtain a storage node electrode region; forming a storage node electrode by depositing a conductive material over the resultant structure; forming a filling film for filling up the opening; etching the filling film, the storage node electrode and the hard mask so that the hard mask has a predetermined thickness; and etching the resultant structure with a chemical mechanical polishing process so that the residual hard mask can be completely removed.