Patents by Inventor Chang-Jen Shieh

Chang-Jen Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor device with separate periphery and cell region etching steps
    Patent number: 6872667
    Abstract: Methods of fabricating semiconductor devices using separate periphery and cell region etching steps are provided. A substrate is provided, wherein the substrate has a cell region and a periphery region separated by a shallow trench isolation (STI). The STI is filled with a dielectric material. A protective layer is formed on the periphery region, allowing semiconductor structures to be formed in the cell region without damaging the surface of the periphery region. Upon forming the semiconductor structures in the cell region, a portion of the dielectric material in the STI adjacent to the cell region is partially removed. The dielectric material adjacent to the periphery region is substantially unetched.
    Type: Grant
    Filed: November 25, 2003
    Date of Patent: March 29, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chang-Jen Shieh, Hung-Cheng Sung
  • Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control
    Patent number: 6350390
    Abstract: A feed forward method for forming within a microelectronic fabrication a patterned target layer with controlled critical dimension (CD) first provides a substrate having formed thereover a blanket target layer, in turn having formed thereover a blanket anti-reflective coating (ARC) layer, in turn having formed thereover a paltered photoresist layer.
    Type: Grant
    Filed: February 22, 2000
    Date of Patent: February 26, 2002
    Assignee: Taiwan SEmiconductor Manufacturing Company, LTD
    Inventors: Chi Kang Liu, Chang Jen Shieh, Pei Hung Chen