Abstract: A joint module for offsetting manufacturing tolerance comprises an outer joint support, a middle joint support, an inner joint support, a plug connector, and a reset component. The middle joint support is rotatably and movably connected to the outer joint support along a first axis. The inner joint support is rotatable and movable connected to the middle joint support along a second axis. The plug connector is connected to the inner joint support. The reset component is placed between the outer joint support, the middle joint support, and the inner joint support to reset the middle joint support and the inner joint support. When the joint module is reset, a third axis of the plug connector is perpendicular to the first axis and the second axis, the plug connector moves along the third axis to connect a plug. A computing device with the joint module is also disclosed.

Abstract: A connector for connecting to a first connecting member comprises a first supporting member, a second supporting member and an elastic member. A mounting hole is defined on the first supporting member for movable connecting to the first supporting member. The second supporting member is configured to be able to deflect axially relative to the first supporting member. The elastic member comprises a first ring body and a second ring body. A gap is defined between the first ring body and the second ring body for translating or deflecting the first ring body relative to the second ring body. When the second supporting member moves and/or deflects relative to the first supporting member, the first ring body and the second ring body are forced to translate and/or deflect relative to each other. The connector is applied in the server and computer for accommodating the accumulated tolerance.

Abstract: A joint module for offsetting manufacturing tolerance comprises an outer joint, a middle joint, an inner joint, a plug connector, and a reset component. The middle joint is movable in radial directions of an axis of the outer joint. The inner joint is rotatable around radial directions of an axis of the middle joint, and the axis of the middle joint is parallel to the axis of the outer joint. The plug connector is fixed to the inner joint. The reset component is placed between the outer joint, the middle joint, and the inner joint, to reset the middle joint and the inner joint until the axis of the plug connector, the outer joint, and the middle joint are coincided. A server system with the joint module is also disclosed.

Abstract: Provided are a separator and an electrochemical device using the same, in particular, a separator having significantly low heat shrinkage even at a high temperature and also significantly improved adhesive strength by including inorganic particles having specific fluorescence properties in the separator, and an electrochemical device using the same.

Abstract: A processing-in-memory (PIM)-based accelerating device includes a plurality of PIM devices, a PIM network system configured to control traffic of signals and data for the plurality of PIM devices, and a first interface configured to perform interfacing with a host device. The PIM network system controls the traffic so that the plurality of PIM devices perform different operations, the plurality of PIM devices perform different operations in groups, or the plurality of PIM devices perform the same operation in parallel.

Abstract: The present disclosure provides a method of forming a semiconductor structure with a metal gate. The semiconductor structure is formed by first fabricating fins over a semiconductor substrate, followed by a formation of a source and a drain recess. A source and a drain region may then be deposited into the source and the drain recess. The gate structure may be deposited into the region between the fins. The gate structure includes dielectric and metallic layers. In the regions between the fins, the gate structure is isolated from the source and the drain region by an insulating layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes first nanostructures and second nanostructures stacked in a vertical direction over a substrate, and a first dielectric structure between the first nanostructures and the second nanostructures. The semiconductor device structure includes a first gate structure formed over the first nanostructures. The first gate structure comprises a gate dielectric layer, and a topmost surface of the gate dielectric layer is higher than a top surface of the first dielectric structure.

Abstract: Disclosed is a negative electrode, including: a negative electrode current collector; and a negative electrode active material layer disposed on at least one surface of the negative electrode current collector, and having a lower layer region containing a first active material and a first binder polymer, and an upper layer region disposed on the lower layer region and containing a second active material and a second binder polymer, wherein the first active material includes primary particles of artificial graphite, the second active material includes secondary particles of artificial graphite and a carbon coating layer disposed on the secondary particles, and the weight percentage (wt %) of the first binder polymer in the lower layer region is larger than the weight percentage (wt %) of the second binder polymer in the upper layer region. Also disclosed are a method for manufacturing the negative electrode and a lithium secondary battery including the negative electrode.

Abstract: A compound for an organic optoelectronic device, an organic optoelectronic device including the same, and a display device, the compound being represented by Chemical Formula 1:

Abstract: A core electrode based on multiple rods, which is a core electrode employed in an underwater electric field sensor electrode, includes: a signal part to which a signal line is connected; a seawater reaction part that electrochemically reacts with seawater; and a waterproof molding part for waterproofing the signal part, in which the seawater reaction part is composed of a plurality of rods made of a silver-silver chloride.

Abstract: There is provided a semiconductor memory device having improved reliability. The semiconductor memory device includes a cell substrate, a mold stack including mold insulating layers and gate electrodes, which are alternately stacked on the cell substrate, a semiconductor layer extended in a vertical direction crossing an upper surface of the cell substrate to pass through the mold stack, a blocking insulating pattern between the semiconductor layer and each of the gate electrodes, a charge storage layer including a charge trap portion between the semiconductor layer and the blocking insulating pattern and a first charge blocking portion between the semiconductor layer and each of the mold insulating layers, and a tunnel insulating layer between the semiconductor layer and the charge storage layer, wherein an oxygen concentration of the first charge blocking portion is higher than that of the charge trap portion.

Abstract: The present invention relates to a compound for an organic optoelectronic device, represented by Chemical Formula 1; a composition for an organic optoelectronic device, including same; an organic optoelectronic device; and a display device. The description of Chemical Formula 1 is the same as that defined in the specification.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate fin and a second substrate fin extending in a first direction, a first isolation strip extending in the first direction and spaced apart from the first substrate fin and the second substrate fin, a first source/drain structure on the first substrate fin, and a second source/drain structure on the second substrate fin. The first isolation strip is sandwiched between and in contact with a first sidewall of the first source/drain structure and a first sidewall of the second source/drain structure.

Abstract: The present invention relates to a composition for cell lysis and nucleic acid extraction, a nucleic acid extraction method using the same, and a molecular diagnostic method using the same, and specifically, to a composition for cell lysis and nucleic acid extraction, a nucleic acid extraction method using the same, and a molecular diagnostic method using the same, wherein a composition containing an RNase inhibitor is used as a solution for nucleic acid extraction, and steps of heating to specific temperatures are included, whereby it is possible to minimize the time for molecular diagnosis by performing polymerase chain reaction without a separate elution process and purification process, and to reduce the cost of molecular diagnosis by minimizing the use of dedicated devices and consumables in extraction.

Abstract: A negative electrode active material including artificial graphite particles is disclosed. During torque rheometer measurement of a sample consisting of the negative electrode active material and water, a solid content value when the sample has a maximum torque value, which is measured by a specific method, is 69.5 wt % or more. If the solid content value, when the sample has the maximum torque value during the torque rheometer measurement, satisfies the above range, powder flowability of the negative electrode active material may be evaluated as excellent. When the negative electrode active material is present in a negative electrode slurry, dispersibility and phase stability may be improved. Thus, the negative electrode slurry including the negative electrode active material of the present disclosure and a negative electrode and a secondary battery, which are prepared therefrom, may have improved productivity and quality.

Abstract: A flow path module, adapted to a heat exchange element and a coolant and including a pipeline structure and at least one flow resistance element, is provided. The pipeline structure is adapted to be connected to the heat exchange element. The flow resistance element is disposed in the pipeline structure, and the coolant flows through the heat exchange element from the pipeline structure. A flow resistance of the flow resistance element is adapted to be adjusted corresponding to a flow resistance of the heat exchange element. A coolant distribution device and a server are also provided.

Abstract: A harmonic deceleration module, a dynamic power device, an automatic mobile vehicle, a transfer apparatus, a dynamic power supply system, and an electric bicycle are provided. The harmonic deceleration module includes a connecting member, a flexible bearing, a first frame, a first circular spline, a second frame, and a second circular spline. When the connecting member is driven, the connecting member rotates around a central axis. The connecting member has a cam part, and the cam part and the flexible bearing jointly form a wave generator. The wave generator is configured to be driven by the connecting member to drive a flexspline to continually and flexibly deform, and the flexspline drives the second circular spline and the second frame connected to the second circular spline to rotate. The second frame has a hollow channel penetrating through the second frame along the central axis.

Abstract: Disclosed are a raw material supply method including vaporizing a raw material in a canister, discharging the vaporized raw material, measuring an inner temperature of the canister, calculating a calculated temperature by using the inner temperature, and compensating a variation of the inner temperature by heating a heating unit disposed on the canister at the calculated temperature and a raw material supply apparatus applied to the method for supplying the raw material. The raw material supply method and apparatus may stably supply the vaporized raw material to a process space.

Abstract: The present disclosure provides a method of forming a semiconductor structure with a metal gate. The semiconductor structure is formed by first fabricating fins over a semiconductor substrate, followed by a formation of a source and a drain recess. A source and a drain region may then be deposited into the source and the drain recess. The gate structure may be deposited into the region between the fins. The gate structure includes dielectric and metallic layers. In the regions between the fins, the gate structure is isolated from the source and the drain region by an insulating layer.

Abstract: A moving path planning apparatus and method for a robot according to the exemplary embodiment of the present disclosure determine an actual moving path using a robot parameter set in advance on the basis of a moving path pattern acquired for every sub region of the map to determine an actual moving path of the robot in consideration of the turning radius of the robot.