Patents by Inventor Chang Jun Yoon

Chang Jun Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same
    Patent number: 8815683
    Abstract: A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: August 26, 2014
    Assignee: Intellectual Discovery Co., Ltd.
    Inventors: Sangsig Kim, Chang Jun Yoon, Dong Young Jeong, Dong Hyuk Yeom
  • NONVOLATILE MEMORY ELECTRONIC DEVICE INCLUDING NANOWIRE CHANNEL AND NANOPARTICLE-FLOATING GATE NODES AND A METHOD FOR FABRICATING THE SAME
    Publication number: 20100276667
    Abstract: A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.
    Type: Application
    Filed: February 12, 2008
    Publication date: November 4, 2010
    Applicant: Korea University Industrial & Academic Collaboration Foundation
    Inventors: Sangsig Kim, Chang Jun Yoon, Dong Young Jeong, Dong Hyuk Yeom