Patents by Inventor Chang-Jyh Hsieh
Chang-Jyh Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9513552Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: GrantFiled: March 23, 2015Date of Patent: December 6, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chue San Yoo, Chang-Jyh Hsieh, Li-Wei Kung, Yung-Cheng Chen
-
Publication number: 20150198887Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: ApplicationFiled: March 23, 2015Publication date: July 16, 2015Inventors: Chue San Yoo, Chang-Jyh Hsieh, Li-Wei Kung, Yung-Cheng Chen
-
Patent number: 8986911Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: GrantFiled: December 20, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chue San Yoo, Yung-Cheng Chen, Li-Wei Kung, Chang-Jyh Hsieh
-
Publication number: 20140178803Abstract: A composite mask suitable for multiple-patterning lithographic processes and a multiple-patterning photolithographic process utilizing the mask are disclosed. An exemplary embodiment includes receiving a mask having a plurality of sub-reticles and a substrate having one or more regions. A first sub-reticle of the plurality of sub-reticles is aligned with a first region of the one or more regions. A movement pattern is designated relative to the substrate. A first photolithographic process is performed including exposing the substrate using the mask to form a first exposed area on the substrate. An alignment of the mask relative to the substrate is shifted according to a first direction determined by the movement pattern. A second photolithographic process is performed including exposing the substrate using the mask to form a second exposed area on the substrate such that the second exposed area overlaps the first.Type: ApplicationFiled: December 20, 2012Publication date: June 26, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chue San Yoo, Yung-Cheng Chen, Li-Wei Kung, Chang-Jyh Hsieh
-
Patent number: 8650511Abstract: The present disclosure provides for many different embodiments. A mask fabrication method and system is provided. The method and system identify critical areas of an integrated circuit (IC) design layout that has undergone optical proximity correction. The critical areas are areas of the OPCed IC design layout that are at risk for hot spots. A lithography process check is then performed on the critical areas of the OPCed IC design layout.Type: GrantFiled: April 30, 2010Date of Patent: February 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Ta Lu, Peng-Ren Chen, Dong-Hsu Cheng, Chang-Jyh Hsieh
-
Publication number: 20110271239Abstract: The present disclosure provides for many different embodiments. A mask fabrication method and system is provided. The method and system identify critical areas of an integrated circuit (IC) design layout that has undergone optical proximity correction. The critical areas are areas of the OPCed IC design layout that are at risk for hot spots. A lithography process check is then performed on the critical areas of the OPCed IC design layout.Type: ApplicationFiled: April 30, 2010Publication date: November 3, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chi-Ta Lu, Peng-Ren Chen, Dong-Hsu Cheng, Chang-Jyh Hsieh
-
Patent number: 7297450Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: GrantFiled: April 25, 2006Date of Patent: November 20, 2007Assignee: United Microelectronics Corp.Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
-
Publication number: 20060183031Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: ApplicationFiled: April 25, 2006Publication date: August 17, 2006Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
-
Patent number: 7063923Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: GrantFiled: September 1, 2004Date of Patent: June 20, 2006Assignee: United Electronics Corp.Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
-
Publication number: 20050009344Abstract: An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.Type: ApplicationFiled: September 1, 2004Publication date: January 13, 2005Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
-
Publication number: 20040194050Abstract: An optical proximity correction (OPC) method first provides a predetermined integrated circuit layout. The integrated circuit layout is then formed on a surface of a photo-mask, and a plurality of nonprintable dummy patterns are formed outside the integrated circuit layout on the surface of the photo-mask. The plurality of dummy patterns are used to reduce the difference in pattern density on the surface of the photo-mask so as to modify optical proximity effect, and the dummy patterns are not transferred to a photoresist layer formed on a semiconductor wafer during a photolithography process.Type: ApplicationFiled: April 2, 2004Publication date: September 30, 2004Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
-
Patent number: 6767679Abstract: The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.Type: GrantFiled: January 2, 2002Date of Patent: July 27, 2004Assignee: United Microelectronics Corp.Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Jui-Tsen Huang
-
Publication number: 20040009409Abstract: An optical proximity correction (OPC) method first provides a predetermined integrated circuit layout. The integrated circuit layout is then formed on a surface of a photo-mask, and a plurality of nonprintable dummy patterns are formed outside the integrated circuit layout on the surface of the photo-mask. The plurality of dummy patterns are used to reduce the difference in pattern density on the surface of the photo-mask so as to modify optical proximity effect, and the dummy patterns are not transferred to a photoresist layer formed on a semiconductor wafer during a photolithography process.Type: ApplicationFiled: July 11, 2002Publication date: January 15, 2004Inventors: Jiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
-
Patent number: 6638664Abstract: A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.Type: GrantFiled: September 18, 2001Date of Patent: October 28, 2003Assignee: United Microelectronics Corp.Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Kuei-Chun Hung, Chien-Ming Wang
-
Publication number: 20030124441Abstract: The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.Type: ApplicationFiled: January 2, 2002Publication date: July 3, 2003Applicant: United Microelectronics Corp.Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Jui-Tsen Huang
-
Publication number: 20030039892Abstract: A method of optical proximity correction. The method at least includes the following steps. First of all, a transparent plate is provided, an opaque film is formed on the transparent plate, wherein the opaque film pattern is a polygon. Finally, at least a serif is added on a line-end of the polygon by using optical proximity correction, wherein the line-end does not include non-90 degree corner.Type: ApplicationFiled: August 16, 2001Publication date: February 27, 2003Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chang-Jyh Hsieh, Pen-Li Lin, Ming-Jui Chen
-
Publication number: 20020182550Abstract: A method of correcting an optical mask pattern. A third pattern having a first strip-like pattern and a second strip-like pattern is provided. The first strip-like pattern attaches to the mid-section of the second strip-like pattern. A first modification step is conducted. A pair of assistant patterns is added to the respective sides of the first strip-like pattern to form a first modified pattern. A second modification step is conducted to shrink a portion of the first strip-like pattern to form a second modified pattern. Dimension in the reduced portion of the first strip-like pattern is a critical dimension of a main pattern. A third modification step is conducted using an optical proximity correction method. The second modified pattern is modified to a third modified pattern.Type: ApplicationFiled: September 18, 2001Publication date: December 5, 2002Inventors: Chang-Jyh Hsieh, Jiunn-Ren Hwang, Kuei-Chun Hung, Chien-Ming Wang
-
Patent number: 5091274Abstract: The present invention provides an ionic conducting polymer electrolyte which is a complex compound prepared from an alkali metal salt and a side-chain liquid crystalline polysiloxane of the formula ##STR1## wherein Me=--CH.sub.3 ; m is an integer of 1-5; x=10-100%, y=O-90%; and Mw(polysiloxane backbone)=1,000-15,000.Type: GrantFiled: June 19, 1990Date of Patent: February 25, 1992Assignee: National Science CouncilInventors: Ging-Ho Hsiue, Chain-Shu Hsu, Chang-Jyh Hsieh, Deng-Shan Chen