Patents by Inventor Chang Ke

Chang Ke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10770292
    Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
  • Patent number: 10727054
    Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: July 28, 2020
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Xueliang Zhu, Jianming Liu, Chang-Cheng Chuo, Bing-Yang Chen, Chen-ke Hsu, Chung-Ying Chang
  • Publication number: 20200227395
    Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.
    Type: Application
    Filed: January 14, 2020
    Publication date: July 16, 2020
    Inventors: Junpeng SHI, Chen-Ke HSU, Chang-Chin YU, Yanqiu LIAO, Zhenduan LIN, Zhaowu HUANG, Senpeng HUANG
  • Publication number: 20200201167
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 25, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Shuwei Liu, Chang Ke, Wen Xiao, Vibhu Jindal
  • Patent number: 10643840
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: May 5, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
  • Publication number: 20200117848
    Abstract: A method including decomposing a conflict graph based on a number of masked to be used to manufacture a semiconductor device. The method further includes determining whether the decomposed conflict graph is a simplified graph based on a comparison between the decomposed conflict graph and a stored conflict graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device. The method further includes indicating that the conflict graph is colorable in response to a determination that the decomposed conflict graph is colorable.
    Type: Application
    Filed: December 11, 2019
    Publication date: April 16, 2020
    Inventors: Chung-Yun CHENG, Chin-Chang HSU, Hsien-Hsin Sean LEE, Jian-Yi LI, Li-Sheng KE, Wen-Ju YANG
  • Patent number: 10572585
    Abstract: This disclosure provides a computer-implemented method. The method may include extracting one or more features based on a first utterance from a first interlocutor in a dialog and a second utterance from a second interlocutor in the dialog. The method may further include inferring one or more personality traits of the first interlocutor based on the one or more extracted features from the dialog.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: February 25, 2020
    Assignee: International Business Machines Coporation
    Inventors: En Liang Xu, Chang Hua Sun, Shi Wan Zhao, Ke Ke Cai, Yue Chen, Li Zhang, Zhong Su
  • Publication number: 20200048762
    Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.
    Type: Application
    Filed: August 8, 2019
    Publication date: February 13, 2020
    Inventors: CHANG KE, WENYU ZHANG, LIQI WU
  • Patent number: 10515185
    Abstract: A method of determining colorability of a layer of a semiconductor device includes iteratively decomposing a conflict graph to remove all nodes having fewer links than a threshold number of links. The method further includes determining whether the decomposed conflict graph is a simplified graph based on a comparison between the decomposed conflict graph and a stored conflict graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device. The method further includes flagging violations in response to a determination that the decomposed conflict graph is not colorable.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Yun Cheng, Chin-Chang Hsu, Hsien-Hsin Sean Lee, Jian-Yi Li, Li-Sheng Ke, Wen-Ju Yang
  • Publication number: 20190326152
    Abstract: Methods and apparatus for supporting a substrate are provided herein. In some embodiments, a substrate support to support a substrate having a given diameter includes: a base ring having an inner diameter less than the given diameter, the base ring having a support surface configured to contact a first surface of the substrate and to form a seal between the support surface and the first surface of the substrate, when disposed atop the base ring; and a clamp ring having an inner diameter less than the given diameter, wherein the clamp ring includes a contact surface proximate the inner diameter configured to contact an upper surface of the substrate, when present, and wherein the clamp ring and the base ring are further configured to provide a bias force toward each other to clamp the substrate in the substrate support.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 24, 2019
    Inventors: CHANG KE, BONNIE CHIA, SONG-MOON SUH, CHENG-HSIUNG TSAI, YUANHONG GUO, LEI ZHOU, DAVID LANGTRY
  • Publication number: 20190326114
    Abstract: Methods for treating a substrate including: contacting a substrate having a top surface with a first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) precursor, a co-reactant, and a second SAM precursor or a second SMM precursor to form a first layer on the top surface. Selective deposition methods are also disclosed.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 24, 2019
    Inventors: JESSICA S. KACHIAN, JUKKA TANSKANEN, WENYU ZHANG, MICHAEL S. JACKSON, CHANG KE, LIQI WU
  • Publication number: 20190304781
    Abstract: A nitride-based semiconductor device includes a patterned substrate having an etched surface that is formed with a plurality of protrusions, an aluminum nitride (AlN)-based film disposed on the etched surface, and a nitride-based semiconductor stacked structure disposed on the aluminum nitride-based film. Each of the protrusions has a side face. The AlN-based film includes a plurality of crystal defects formed on the side face of each protrusion. Each of the crystal defects has a width of smaller than 20 nm and/or the number of the crystal defects that are formed on the side face of each protrusion and that have a width of greater than 10 nm is less than 10. A method for preparing the semiconductor device is also disclosed.
    Type: Application
    Filed: June 20, 2019
    Publication date: October 3, 2019
    Inventors: Xueliang ZHU, Jianming LIU, Chang-Cheng CHUO, Bing-Yang CHEN, Chen-ke HSU, Chung-Ying CHANG
  • Patent number: 10389677
    Abstract: Embodiments of the invention provide a computer-implemented method, computing system and computer program product for analyzing a message in a social network. The method comprises identifying an entity from the message; detecting historical popularity of the entity in a social network; identifying a topic from the message; detecting historical popularity of the topic in the social network; and generating an entity-topic correlation factor for the entity and the topic based on the historical popularity of the entity and the historical popularity of the topic. Results obtained with embodiments of the invention may be provided to popularity prediction tools for improving popularity prediction of messages in social networks.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: August 20, 2019
    Assignee: International Business Machines Corporation
    Inventors: Ke Ke Cai, Hong Lei Guo, Jian Min Jiang, Zhong Su, Chang Hua Sun, Guo Yu Tang
  • Publication number: 20190210061
    Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.
    Type: Application
    Filed: January 8, 2019
    Publication date: July 11, 2019
    Inventors: Chang Ke, Song-Moon Suh, Liqi Wu, Michael S. Jackson, Lei Zhou, Biao Liu, Cheng Pan, Paul F. Ma, Mei Chang
  • Publication number: 20190171789
    Abstract: A method of determining colorability of a layer of a semiconductor device includes iteratively decomposing a conflict graph to remove all nodes having fewer links than a threshold number of links. The method further includes determining whether the decomposed conflict graph is a simplified graph based on a comparison between the decomposed conflict graph and a stored conflict graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device. The method further includes flagging violations in response to a determination that the decomposed conflict graph is not colorable.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 6, 2019
    Inventors: Chung-Yun CHENG, Chin-Chang HSU, Hsien-Hsin Sean LEE, Jian-Yi LI, Li-Sheng KE, Wen-Ju YANG
  • Publication number: 20190163735
    Abstract: This disclosure provides a computer-implemented method. The method may include generating one or more features based on a first utterance from a first interlocutor in a dialog and a second utterance from a second interlocutor in the dialog.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Inventors: En Liang XU, Chang Hua SUN, Shi Wan ZHAO, Ke Ke CAI, Yue CHEN, Li ZHANG, Zhong SU
  • Publication number: 20190157079
    Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.
    Type: Application
    Filed: November 16, 2018
    Publication date: May 23, 2019
    Inventors: Chang Ke, Michael S. Jackson, Liqi Wu, Lei Zhou, Shuyi Zhang, David Thompson, Paul F. Ma, Biao Liu, Cheng Pan
  • Publication number: 20190148144
    Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.
    Type: Application
    Filed: October 24, 2018
    Publication date: May 16, 2019
    Inventors: Biao LIU, Cheng PAN, Erica CHEN, Srinivas D. NEMANI, Chang KE, Lei ZHOU
  • Publication number: 20190080904
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
    Type: Application
    Filed: September 12, 2018
    Publication date: March 14, 2019
    Inventors: Jeffrey W. Anthis, Chang Ke, Pratham Jain, Benjamin Schmiege, Guoqiang Jian, Michael S. Jackson, Lei Zhou, Paul F. Ma, Liqi Wu
  • Publication number: 20180366317
    Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 20, 2018
    Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma