Patents by Inventor Chang-Ken Chen
Chang-Ken Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8975126Abstract: A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor layer. The source and the drain are disposed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer, wherein a part of the semiconductor layer covered by the source and the drain has a first thickness, a part of the semiconductor layer disposed between the source and the drain and not covered by the source and the drain has a second thickness ranging from 200 ? to 800 ?. The gate insulation layer is disposed on the source, the drain and the semiconductor layer. The gate is disposed on the gate insulation layer.Type: GrantFiled: June 21, 2013Date of Patent: March 10, 2015Assignee: Au Optronics CorporationInventor: Chang-Ken Chen
-
Publication number: 20130280868Abstract: A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor layer. The source and the drain are disposed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer, wherein a part of the semiconductor layer covered by the source and the drain has a first thickness, a part of the semiconductor layer disposed between the source and the drain and not covered by the source and the drain has a second thickness ranging from 200 ? to 800 ?. The gate insulation layer is disposed on the source, the drain and the semiconductor layer. The gate is disposed on the gate insulation layer.Type: ApplicationFiled: June 21, 2013Publication date: October 24, 2013Inventor: Chang-Ken Chen
-
Patent number: 8525179Abstract: A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor layer. The source and the drain are disposed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer, wherein a part of the semiconductor layer covered by the source and the drain has a first thickness, a part of the semiconductor layer disposed between the source and the drain and not covered by the source and the drain has a second thickness ranging from 200 ? to 800 ?. The gate insulation layer is disposed on the source, the drain and the semiconductor layer. The gate is disposed on the gate insulation layer.Type: GrantFiled: April 12, 2011Date of Patent: September 3, 2013Assignee: Au Optronics CorporationInventor: Chang-Ken Chen
-
Patent number: 8470624Abstract: A fabricating method of an organic electroluminescent display unit is provided. A gate and a gate insulating layer covering the gate are formed on the substrate. A patterned metal-oxide layer with an etching stop layer thereon is formed on the gate insulating layer. A surface treatment is performed on the patterned metal-oxide layer with use of the etching stop layer as a mask, such that a portion of the patterned metal-oxide layer uncovered by the etching stop layer has greater conductivity than conductivity of another portion of the patterned metal-oxide layer covered by the etching stop layer. The patterned metal-oxide layer treated by the surface treatment includes a pixel electrode and an active layer located above the gate. A source and a drain are then formed. And then, an organic electro-luminescence layer and a top electrode are sequentially formed on the pixel electrode.Type: GrantFiled: September 4, 2012Date of Patent: June 25, 2013Assignee: Au Optronics CorporationInventors: Chang-Ken Chen, Hsing-Hung Hsieh
-
Publication number: 20120329189Abstract: A fabricating method of an organic electroluminescent display unit is provided. A gate and a gate insulating layer covering the gate are formed on the substrate. A patterned metal-oxide layer with an etching stop layer thereon is formed on the gate insulating layer. A surface treatment is performed on the patterned metal-oxide layer with use of the etching stop layer as a mask, such that a portion of the patterned metal-oxide layer uncovered by the etching stop layer has greater conductivity than conductivity of another portion of the patterned metal-oxide layer covered by the etching stop layer. The patterned metal-oxide layer treated by the surface treatment includes a pixel electrode and an active layer located above the gate. A source and a drain are then formed. And then, an organic electro-luminescence layer and a top electrode are sequentially formed on the pixel electrode.Type: ApplicationFiled: September 4, 2012Publication date: December 27, 2012Applicant: Au Optronics CorporationInventors: Chang-Ken Chen, Hsing-Hung Hsieh
-
Patent number: 8299460Abstract: A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode.Type: GrantFiled: October 21, 2009Date of Patent: October 30, 2012Assignee: Au Optronics CorporationInventors: Chang-Ken Chen, Hsing-Hung Hsieh
-
Publication number: 20120056180Abstract: A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor layer. The source and the drain are disposed on the patterned doped semiconductor layer and the opposite sides of the semiconductor layer, wherein a part of the semiconductor layer covered by the source and the drain has a first thickness, a part of the semiconductor layer disposed between the source and the drain and not covered by the source and the drain has a second thickness ranging from 200 ? to 800 ?. The gate insulation layer is disposed on the source, the drain and the semiconductor layer. The gate is disposed on the gate insulation layer.Type: ApplicationFiled: April 12, 2011Publication date: March 8, 2012Applicant: AU OPTRONICS CORPORATIONInventor: Chang-Ken Chen
-
Publication number: 20110017989Abstract: A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode.Type: ApplicationFiled: October 21, 2009Publication date: January 27, 2011Applicant: AU OPTRONICS CORPORATIONInventors: Chang-Ken Chen, Hsing-Hung Hsieh