Abstract: The present invention relates to polyolefin. More specifically, the present invention relate s to polyolefin having excellent dart drop impact strength, and exhibiting improved transparency and satisfying one of the following 1)˜4): 1) when density is 0.9165 g/cm3 or more and less than 0.9175 g/cm3, the content of SCB (Short Chain Branch) is 9.5 to 10.5 wt %, 2) when density is 0.9175 g/cm3 or more and less than 0.9185 g/cm3, the content of SCB (Short Chain Branch) is 9.0 to 10.0 wt %, 3) when density is 0.9185 g/cm3 or more and less than 0.9195 g/cm3, the content of SCB (Short Chain Branch) is 8.5 to 9.5 wt %, 4) when density is 0.9195 g/cm3 or more and less than 0.9205 g/cm3, the content of SCB (Short Chain Branch) is 7.5 to 8.5 wt %, wherein the density is measured according to ASTM D1505.

Abstract: A light-emitting element includes a first semiconductor layer doped to have a first polarity, a second semiconductor layer doped to have a second polarity different from the first polarity, a light-emitting layer disposed between the first and second semiconductor layers, a shell layer formed on side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the shell layer including a divalent metal element, and an insulating film covering an outer surface of the shell layer and surrounding the side surface of the light-emitting layer.

Abstract: A method of manufacturing a semiconductor device includes: forming an etching mask layer on a semiconductor substrate having an etching target layer, patterning the etching mask layer to form a plurality of etching mask patterns, and forming a subsidiary layer surrounding the etching mask patterns having a uniform critical dimension and gap to form hard mask patterns including the subsidiary layer and the etching mask patterns.

Abstract: A method of manufacturing a semiconductor device includes: forming an etching mask layer on a semiconductor substrate having an etching target layer, patterning the etching mask layer to form a plurality of etching mask patterns, and forming a subsidiary layer surrounding the etching mask patterns having a uniform critical dimension and gap to form hard mask patterns including the subsidiary layer and the etching mask patterns.

Abstract: A method of manufacturing a semiconductor device having patterns with different widths. The method includes etching a sacrificial pattern using a protective pattern that has a greater width and remains during an etch process of a spacer layer. Since the sacrificial pattern that has a greater width and remains under the protective pattern having a greater width is used as a pad mask pattern, a separate process of forming a pad mask pattern may not be necessary. Therefore, a method of manufacturing a semiconductor device may be simplified.

Abstract: The invention is about a panel type extinguisher vessel which is safe and secure and it is prevented from expanding deformation due to the pressurized extinguishing agent. The extinguisher vessel of the invention is in the shape of panel having a front plate and a rear plate with the inner space between them, and the vessel further includes a connecting member extending through the inner space to connect the front plate and the rear plate, and at least one of the reinforcing grooves are formed on the front plate and the rear plate.

Abstract: A method of forming a gate line of a semiconductor device, wherein when an etch process for forming a gate line is performed, a loading effect is improved, thereby enhancing the operating speed of a semiconductor device. According to a method of forming a gate line of a semiconductor device in accordance with an aspect of the invention, a stack layer is formed over a semiconductor substrate that includes a first area and a second area. Hard mask patterns are formed over the stack layer so that the hard mask patterns are denser in the first area than in the second area. Next, a loading compensation layer is formed before the stack layer is etched, or the loading compensation layer is deposited after the stack layer is partially etched. Accordingly, a loading effect occurring when the stack layer is etched can be offset.

Abstract: A method of forming a gate line of a semiconductor device, wherein when an etch process for forming a gate line is performed, a loading effect is improved, thereby enhancing the operating speed of a semiconductor device. According to a method of forming a gate line of a semiconductor device in accordance with an aspect of the invention, a stack layer is formed over a semiconductor substrate that includes a first area and a second area. Hard mask patterns are formed over the stack layer so that the hard mask patterns are denser in the first area than in the second area. Next, a loading compensation layer is formed before the stack layer is etched, or the loading compensation layer is deposited after the stack layer is partially etched. Accordingly, a loading effect occurring when the stack layer is etched can be offset.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.