Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and cis amole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A method of manufacturing a semiconductor package includes preparing a package substrate including a semiconductor chip mounting region. A semiconductor chip is mounted in the semiconductor chip mounting region. A dam surrounding the semiconductor chip is formed. The formation of the dam includes depositing a first solution having a temperature below a set first temperature. A region under the semiconductor chip and a region defined by the dam are filled with an underfill by depositing the first solution having a temperature equal to or higher than the set first temperature.

Abstract: A method of manufacturing a semiconductor package includes preparing a package substrate including a semiconductor chip mounting region. A semiconductor chip is mounted in the semiconductor chip mounting region. A dam surrounding the semiconductor chip is formed. The formation of the dam includes depositing a first solution having a temperature below a set first temperature. A region under the semiconductor chip and a region defined by the dam are filled with an underfill by depositing the first solution having a temperature equal to or higher than the set first temperature.