Abstract: The device for processing a substrate according to an embodiment of the present disclosure includes a chamber, a substrate supporting unit which is provided inside the chamber and supports a substrate provided inside the chamber, a gas distribution unit which is provided inside the chamber to face the substrate supporting unit and distributes a process gas toward the substrate supporting unit, a first temperature control unit which is installed in a central region of the gas distribution unit and increases a temperature of the central region, and a second temperature control unit which is installed in an edge region of the gas distribution unit and increases a temperature of the edge region more rapidly than the temperature of the central region.

Abstract: A memory system includes a memory device, a memory controller configured to control the memory device, and an interface device configured to perform an interfacing operation for transmission of a control signal and data between the memory device and the memory controller. The interface device activates a blocking function for the interfacing operation in response to a configuration command of the memory controller including a blocking activation signal and performs an interface configuration operation in response to an interface configuration command of the memory controller while the blocking function is activated.

Abstract: A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit, the interface circuit storing first system data, and a semiconductor memory; and a controller configured to output a read enable signal and a first read command for the first system data to the memory device. The semiconductor memory transfers a data strobe signal to the interface circuit in response to the read enable signal, the interface circuit reads the first system data in response to the first read command and transmits the read first system data to the controller in synchronization with the data strobe signal.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: The present disclosure relates to a thin film transistor, and more particularly, to a thin film transistor in which a metal oxide thin film is used as an active layer. A thin film transistor including a gate insulating film and an active layer formed between source and drain electrodes, wherein the active layer includes: a first metal oxide thin film; a second metal oxide thin film provided between the first metal oxide thin film and the gate insulating film and having lower electrical conductivity than the first metal oxide thin film; and a third metal oxide thin film provided between the first metal oxide thin film and the source and drain electrodes and having lower electrical conductivity than the first metal oxide thin film.

Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit, the interface circuit storing first system data, and a semiconductor memory; and a controller configured to output a read enable signal and a first read command for the first system data to the memory device. The semiconductor memory transfers a data strobe signal to the interface circuit in response to the read enable signal, the interface circuit reads the first system data in response to the first read command and transmits the read first system data to the controller in synchronization with the data strobe signal.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller configured to generate a command set in response to a host command and output the command set to the memory device. The interface circuit is configured to: receive the command set, transmit the received command set to the semiconductor memory, when the received command set corresponds to the semiconductor memory, perform a blocking operation so that the received command set is not transmitted to the semiconductor memory, when the received command set corresponds to the interface circuit, and perform an on-die termination operation, a ZQ calibration operation, or a driving force control operation of the interface circuit in response to the received command set corresponding to the interface circuit.

Abstract: A memory system includes a memory device, a memory controller configured to control the memory device, and an interface device configured to perform an interfacing operation for transmission of a control signal and data between the memory device and the memory controller. The interface device activates a blocking function for the interfacing operation in response to a configuration command of the memory controller including a blocking activation signal and performs an interface configuration operation in response to an interface configuration command of the memory controller while the blocking function is activated.

Abstract: Provided is a method for operating an interface circuit of a memory device. The method includes receiving a command from a controller; determining whether the command is for a semiconductor memory or the interface circuit, the semiconductor memory operatively coupled to the interface circuit; and when it is determined that the command is for the interface circuit, performing a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performing an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: The present technology includes a memory device and a method of operating the same. The memory device in which an interface circuit and a semiconductor memory are packaged together includes a centrally located region in a ball mapping region of a memory device in which data input/output pins for an operation of the interface circuit and the semiconductor memory are disposed, and a test pin region in which test pins for a test operation of the interface circuit are disposed.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit, the interface circuit storing first system data, and a semiconductor memory; and a controller configured to output a read enable signal and a first read command for the first system data to the memory device. The semiconductor memory transfers a data strobe signal to the interface circuit in response to the read enable signal, the interface circuit reads the first system data in response to the first read command and transmits the read first system data to the controller in synchronization with the data strobe signal.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit, the interface circuit storing first system data, and a semiconductor memory; and a controller configured to output a read enable signal and a first read command for the first system data to the memory device. The semiconductor memory transfers a data strobe signal to the interface circuit in response to the read enable signal, the interface circuit reads the first system data in response to the first read command and transmits the read first system data to the controller in synchronization with the data strobe signal.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller configured to generate a command for controlling the memory device and output the command to the memory device. The interface circuit receives the command, transmits the received command to the semiconductor memory when the received command corresponds to the semiconductor memory, and performs a training operation of the interface circuit when the received command corresponds to the interface circuit and the received command is a specific command.

Abstract: The present technology includes a memory system and a method of operating the memory system. The memory system includes a memory device including an interface circuit, the interface circuit storing first system data, and a semiconductor memory; and a controller configured to output a read enable signal and a first read command for the first system data to the memory device. The semiconductor memory transfers a data strobe signal to the interface circuit in response to the read enable signal, the interface circuit reads the first system data in response to the first read command and transmits the read first system data to the controller in synchronization with the data strobe signal.

Abstract: A memory system includes a memory device, a memory controller configured to control the memory device, and an interface device configured to perform an interfacing operation for transmission of a control signal and data between the memory device and the memory controller. The interface device activates a blocking function for the interfacing operation in response to a configuration command of the memory controller including a blocking activation signal and performs an interface configuration operation in response to an interface configuration command of the memory controller while the blocking function is activated.