Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: The present disclosure provides an electronic assembly including a semiconductor device package. The semiconductor device package includes a first package and a conductive element. The first package includes an electronic component and a protection layer covering the electronic component. The conductive element is supported by the protection layer and electrically connected with the electronic component through an electrical contact. A method for manufacturing a semiconductor device package is also provided in the present disclosure.

Abstract: The present disclosure generally relates to underwater user interfaces.

Abstract: Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.

Abstract: The invention relates to a method for long-term ex vivo maintenance or expansion of one or more of a human erythroblast, a human megakaryocyte-erythroid progenitor, or a human common myeloid progenitor, comprising the step of: culturing cells comprising one or more of those cells in a culture medium comprising one or more selected from a tankyrase inhibitor, a growth factor, a B-Raf kinase inhibitor and a GSK-3 inhibitor.

Abstract: The present invention discloses a connector that utilizes a first connecting portion includes a plurality of terminals and a latching arm that forms a connection end and utilizes a second connecting portion includes a plurality of terminal slots and an engaging groove that be coupled to the connection end of the first connecting portion. The terminals are electrically connected to the terminal slots and the connecting ends are fastened to the engaging arms, and the terminals are electrically connected to the terminal slots. In a state in which the electrical connection is maintained, the first connecting portion and the second connecting portion are disposed in close to or in the same plane by applying an external force to change the first angle between the first connecting portion and the second connecting portion to the second angle.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A tape laying device includes a tape transmission mechanism, a compaction head mechanism, a cutter mechanism, a heating mechanism and a motion mechanism. The tape transmission mechanism is configured to transmit the pre-impregnated tape. The compaction head mechanism, connected with the tape transmission mechanism, is configured to depress and drive the pre-impregnated tape transmitted by the tape transmission mechanism to follow a moving path so as to adhere the pre-impregnated tape onto the mould surface. The cutter mechanism is configured to cut the pre-impregnated tape. The heating mechanism, disposed downstream to the cutter mechanism, is configured to heat the pre-impregnated tape. The motion mechanism is used to have the cutter mechanism having an active path to move toward the moving path while the cutter mechanism cuts the pre-impregnated tape.

Abstract: A wireless power transmission device includes a transmission device and a control device. The control device generates a driving signal to the transmission device in a first soft-start period, so as to drive the transmission device. The control device measures an energy message generated by the transmission device to generate a measurement result in a measurement period, and calculates a signal parameter according to the measurement result. The control device accordingly generates a carrier signal according to the signal parameter obtained by the measurement period in a second soft-start period. In a transmission period, the carrier signal is transmitted to the wireless power-receiving device through the transmission device. The energy message is generated by the transmission device in response to a distance between the transmission device and the wireless power-receiving device.

Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.

Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: An electronic device is disclosed. The electronic device includes a substrate, a plurality of color filters disposed on the substrate, an optical film disposed on the plurality of color filter, and a defect disposed between the substrate and the optical film. The optical film has a first base, a protective layer on the first base, and a second base between the first base and the protective layer and having a first processed area. In a top view of the electronic device, the first processed area corresponds to the defect and at least partially overlaps at least two color filters.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: An industrial heavy load electric linear actuator includes a gearbox (10), an electric motor (20), a lead screw (30), an extension pipe (40) and a load baring structure (50). The electric motor (20) is connected to the gearbox (10). A portion of the lead screw (30) is received inside the gearbox (10) and driven by the electric motor (20), and another portion of the lead screw (30) is extended out of the gearbox (10). The extension pipe (40) is movably fastened to the lead screw (30). The load bearing structure (50) includes a sleeve (51), a bearing (52), a fastening element (53), a fixation seat (54) and a rear supporting seat (55). The sleeve (51) is mounted to the lead screw (30) and holds the bearing (52) jointly with the fastening element (53). The fixation seat (54) and the rear supporting seat (55) hold the bearing (52) at outer perimeters of the sleeve (51) and the fastening element (53).

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: A switching control circuit for use in controlling a resonant flyback power converter generates a first driving signal and a second driving signal. The first driving signal is configured to turn on the first transistor to generate a first current to magnetize a transformer and charge a resonant capacitor. The transformer and charge a resonant capacitor are connected in series. The second driving signal is configured to turn on the second transistor to generate a second current to discharge the resonant capacitor. During a power-on period of the resonant flyback power converter, the second driving signal includes a plurality of short-pulses configured to turn on the second transistor for discharging the resonant capacitor. A pulse-width of the short-pulses of the second driving signal is short to an extent that the second current does not exceed a current limit threshold.

Abstract: Provided are an electrolytic copper foil, an electrode and a lithium-ion cell comprising the same. The electrolytic copper foil has a first surface and a second surface opposite the first surface. An absolute difference of the FWHM of the characteristic peaks of (111) planes of the first surface and the second surface analyzed by GIXRD is less than 0.14, the first and the second surfaces each have a nanoindentation hardness of 0.3 GPa to 3.0 GPa, and the yield strength of the electrolytic copper foil is more than 230 MPa. By controlling the absolute difference of the FWHM of the characteristic peaks of (111) plane of these two surfaces, the nanoindentation hardness of these two surfaces and the yield strength, the electrolytic copper foil can have improved tolerance to the repeated charging and discharging and reduced warpage, thereby improving the yield rate and value of the lithium-ion cell.

Abstract: A method of processing light-emitting elements includes: transferring a plurality of light-emitting elements from original wafers or next-stage carriers, based on a predetermined pattern. The predetermined pattern arranges two adjacent LED groups in a first direction on the original wafer or carriers to be placed on two non-adjacent positions in the first direction on the next-stage carriers. The light-emitting elements on the original wafer have a horizontal wafer pitch and a vertical wafer pitch. The light-emitting elements on each of the next-stage carriers have a first horizontal pitch and a first vertical pitch. The first horizontal pitch is greater than the horizontal wafer pitch, or the first vertical pitch is greater than the vertical wafer pitch. Besides, a light-emitting element device using the aforementioned method is also provided.