Patents by Inventor Chang-Lin Hsieh
Chang-Lin Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240139301Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.Type: ApplicationFiled: November 19, 2021Publication date: May 2, 2024Inventors: Ming-Tain LAI, Cheng-Der Tony YU, I-Ju CHEN, Wei-Han LEE, Chueh-Hao YANG, Chun-Yen TSAO, Chang-Lin HSIEH, Chien-Chih OU, Chen-En TSAI
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Patent number: 11961938Abstract: A method of processing light-emitting elements includes: transferring a plurality of light-emitting elements from original wafers or next-stage carriers, based on a predetermined pattern. The predetermined pattern arranges two adjacent LED groups in a first direction on the original wafer or carriers to be placed on two non-adjacent positions in the first direction on the next-stage carriers. The light-emitting elements on the original wafer have a horizontal wafer pitch and a vertical wafer pitch. The light-emitting elements on each of the next-stage carriers have a first horizontal pitch and a first vertical pitch. The first horizontal pitch is greater than the horizontal wafer pitch, or the first vertical pitch is greater than the vertical wafer pitch. Besides, a light-emitting element device using the aforementioned method is also provided.Type: GrantFiled: March 13, 2020Date of Patent: April 16, 2024Assignee: EPISTAR CORPORATIONInventors: Min-Hsun Hsieh, Chang-Lin Lee
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Patent number: 11500279Abstract: An optical module and a projection apparatus using the optical module are provided. The optical module includes a base, a first frame, an optical element and at least one driving assembly. The first frame is disposed in the base. The optical element is disposed in the first frame. The at least one driving assembly is disposed between the base and the first frame. The first frame is configured to move relative to the base by a magnetic force generated by the at least one driving assembly. Each of the at least one driving assembly includes a coil and a Halbach array magnet structure, the coil and the Halbach array magnet structure face each other along a first direction, a width of the Halbach array magnet structure in the first direction is W1, and a width of the coil in the first direction is W2, and 0.7?W1/W2?2.Type: GrantFiled: July 16, 2020Date of Patent: November 15, 2022Assignee: Coretronic CorporationInventors: Chien-Sheng Liu, Yu-Hao Chang, Chang-Lin Hsieh, Yi Chang, Shu-Yu Lin
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Patent number: 11240554Abstract: A HDMI apparatus is provided. The HDMI apparatus includes a first audio/video transceiver (A/V transceiver) configured to transmit an optical A/V signal to a second A/V transceiver; and a first sideband transceiver configured to drive a first laser diode to transmit a first optical sideband signal including a first control information or a first power information; wherein the first control information or the first power information is converted by a first Serializer/Deserializer (SERDES).Type: GrantFiled: June 14, 2021Date of Patent: February 1, 2022Assignee: Artilux, Inc.Inventors: Shao-Hung Lin, Chang-Lin Hsieh, Che-Fu Liang
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Publication number: 20210314656Abstract: A HDMI apparatus is provided. The HDMI apparatus includes a first audio/video transceiver (A/V transceiver) configured to transmit an optical A/V signal to a second A/V transceiver; and a first sideband transceiver configured to drive a first laser diode to transmit a first optical sideband signal including a first control information or a first power information; wherein the first control information or the first power information is converted by a first Serializer/Deserializer (SERDES).Type: ApplicationFiled: June 14, 2021Publication date: October 7, 2021Inventors: Shao-Hung Lin, Chang-Lin Hsieh, Che-Fu Liang
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Patent number: 11039202Abstract: A HDMI apparatus is provided. The HDMI apparatus includes a first audio/video transceiver (A/V transceiver) configured to transmit an optical A/V signal to a second A/V transceiver; and a first sideband transceiver configured to drive a first laser diode to transmit a first optical sideband signal including a first control information or a first power information; wherein the first control information or the first power information is converted by a first Serializer/Deserializer (SERDES).Type: GrantFiled: April 30, 2020Date of Patent: June 15, 2021Assignee: Artilux, Inc.Inventors: Shao-Hung Lin, Chang-Lin Hsieh, Che-Fu Liang
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Publication number: 20210026230Abstract: An optical module and a projection apparatus using the optical module are provided. The optical module includes a base, a first frame, an optical element and at least one driving assembly. The first frame is disposed in the base. The optical element is disposed in the first frame. The at least one driving assembly is disposed between the base and the first frame. The first frame is configured to move relative to the base by a magnetic force generated by the at least one driving assembly. Each of the at least one driving assembly includes a coil and a Halbach array magnet structure, the coil and the Halbach array magnet structure face each other along a first direction, a width of the Halbach array magnet structure in the first direction is W1, and a width of the coil in the first direction is W2, and 0.7?W1/W2?2.Type: ApplicationFiled: July 16, 2020Publication date: January 28, 2021Applicant: Coretronic CorporationInventors: Chien-Sheng Liu, Yu-Hao Chang, Chang-Lin Hsieh, Yi Chang, Shu-Yu Lin
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Publication number: 20200359084Abstract: A HDMI apparatus is provided. The HDMI apparatus includes a first audio/video transceiver (A/V transceiver) configured to transmit an optical A/V signal to a second A/V transceiver; and a first sideband transceiver configured to drive a first laser diode to transmit a first optical sideband signal including a first control information or a first power information; wherein the first control information or the first power information is converted by a first Serializer/Deserializer (SERDES).Type: ApplicationFiled: April 30, 2020Publication date: November 12, 2020Inventors: Shao-Hung Lin, Chang-Lin Hsieh, Che-Fu Liang
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Patent number: 10630101Abstract: A charging-discharging module of the energy storage unit is provided. The charging-discharging module of the energy storage unit includes a first energy storage unit; a second energy storage unit; a first switching unit electrically connected to a first terminal of the second energy storage unit; a selecting circuit electrically connected to a first terminal of the first energy storage unit and the first switching unit to selectively conduct the first energy storage unit or the second energy storage unit to a system circuit; and a processing unit electrically connected to the first switching unit. A charging and discharging method is also provided.Type: GrantFiled: August 24, 2017Date of Patent: April 21, 2020Assignee: ASUSTEK COMPUTER INC.Inventors: Chang-Lin Hsieh, Yi-Ming Huang, Chien-Chung Lo, Wei-Chen Tu
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Publication number: 20180069428Abstract: A charging-discharging module of the energy storage unit is provided. The charging-discharging module of the energy storage unit includes a first energy storage unit; a second energy storage unit; a first switching unit electrically connected to a first terminal of the second energy storage unit; a selecting circuit electrically connected to a first terminal of the first energy storage unit and the first switching unit to selectively conduct the first energy storage unit or the second energy storage unit to a system circuit; and a processing unit electrically connected to the first switching unit. A charging and discharging method is also provided.Type: ApplicationFiled: August 24, 2017Publication date: March 8, 2018Inventors: Chang-Lin HSIEH, Yi-Ming HUANG, Chien-Chung LO, Wei-Chen TU
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Patent number: 8133819Abstract: Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.Type: GrantFiled: February 21, 2008Date of Patent: March 13, 2012Assignee: Applied Materials, Inc.Inventors: Judy Wang, Shawming Ma, Chang-Lin Hsieh, Bryan Liao, Jie Zhou, Hun Sang Kim
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Publication number: 20110130007Abstract: Methods of processing substrates having titanium nitride layers are provided. In some embodiments, a method for processing a substrate having a dielectric layer to be etched, a titanium nitride layer above the dielectric layer, and a patterned photoresist layer above the titanium nitride layer, includes etching a pattern into the titanium nitride layer by exposing the titanium nitride layer to a first plasma comprising a chlorine containing gas to form a hard mask; removing titanium nitride etch residues disposed on one or more surfaces of the process chamber and/or substrate by forming a second plasma in the process chamber from a reactive gas comprising at least one of carbon monoxide or carbon dioxide; and etching the dielectric layer through the hard mask with a third plasma comprising a fluorocarbon gas.Type: ApplicationFiled: September 17, 2010Publication date: June 2, 2011Applicant: APPLIED MATERIALS, INC.Inventors: CHI-HONG CHING, CHANG-LIN HSIEH, JIE ZHOU
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Publication number: 20100024840Abstract: A method for plasma-cleaning a chamber in a process tool is described. A substrate is placed on a chuck in a process chamber having a set of contaminants therein. A plasma process is executed in the process chamber to transfer the set of contaminants to the top surface of the substrate. The substrate, having the set of contaminants thereon, is removed from the process chamber.Type: ApplicationFiled: July 29, 2008Publication date: February 4, 2010Inventors: CHANG-LIN HSIEH, Chi-Hong Ching, Hidehiro Kojiri, Joshua Tsui
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Patent number: 7585778Abstract: A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).Type: GrantFiled: March 27, 2007Date of Patent: September 8, 2009Assignee: Applied Materials, Inc.Inventors: Chang-Lin Hsieh, Binxi Gu
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Publication number: 20090212010Abstract: Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.Type: ApplicationFiled: February 21, 2008Publication date: August 27, 2009Inventors: Judy Wang, Shawming Ma, Chang-Lin Hsieh, Bryan Liao, Jie Zhou, Hun Sang Kim
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Publication number: 20090156012Abstract: Methods for forming dual damascene structures in low-k dielectric materials that facilitate reducing photoresist poison issues are provided herein. In some embodiments, such methods may include plasma etching a via through a first mask layer into a low-k dielectric material disposed on a substrate. The first mask layer may then be removed using a process including exposing the first mask layer to a first plasma comprising an oxygen containing gas and at least one of a dilutant gas or a passivation gas, and subsequently exposing the first mask layer to a second plasma comprising an oxygen containing gas and formed using one of either plasma bias power or plasma source power. An anti-reflective coating may then be deposited into the via and atop the low-k dielectric material. A trench may then be plasma etched through a second mask layer formed atop the anti-reflective coating into the low-k dielectric material.Type: ApplicationFiled: December 12, 2007Publication date: June 18, 2009Applicant: APPLIED MATERIALS, INC.Inventors: CHANG-LIN HSIEH, BINXI GU, JIE YUAN, HUI XIONG DAI, ROBIN CHEUNG, SUBHASH DESHMUKH
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Publication number: 20080237183Abstract: A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).Type: ApplicationFiled: March 27, 2007Publication date: October 2, 2008Inventors: CHANG-LIN HSIEH, Binxi Gu
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Publication number: 20080023144Abstract: In at least some embodiments, a plasma etch tool is provided which includes a processing chamber capable of receiving a workpiece. The plasma etch tool is configured to generate a high density and low bombardment energy plasma therein from a gas mixture which includes CF4, N2 and Ar, for processing the workpiece. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The density or electron density, can, depending on the embodiment, range from about 5×1010 electrons/cm3 and above, including about 1×1011 electrons/cm3 and above. The gas mixture can further include H2, NH3, a hydrofluorocarbon gas and/or a fluorocarbon gas.Type: ApplicationFiled: July 15, 2007Publication date: January 31, 2008Inventors: Gerardo Delgadino, Chang-Lin Hsieh, Yan Ye, Hyunjong Shim
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Patent number: 7071112Abstract: Method, materials and structures are described for the fabrication of dual damascene features in integrated circuits. In via-first dual damascene fabrication, a bottom-antireflective-coating (“BARC”) is commonly deposited into the via and field regions surrounding the via, 107. Subsequent trench etch with conventional etching chemistries typically results in isolated regions of BARC, 107a, surrounded by “fencing” material, 108, at the bottom of the via. Such fencing hinders conformal coating with barrier/adhesion layers and can reduce device yield. The present invention relates to the formation of a BARC plug, 107c, partially filling the via and having a convex upper surface, 400, prior to etching the trench. Such a BARC structure is shown to lead to etching without the formation of fencing and a clean dual damascene structure for subsequent coating.Type: GrantFiled: October 21, 2002Date of Patent: July 4, 2006Assignee: Applied Materials, Inc.Inventors: Chang-Lin Hsieh, QiQun Zhang, Jie Yuan, Terry Leung, Silvia Halim
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Publication number: 20060118519Abstract: In at least some embodiments, the present invention is a plasma etching method which includes applying a gas mixture comprising CF4, N2 and Ar and forming a high density and low bombardment energy plasma. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The gas mixture can further include H2, NH3, a hydrofluorocarbon gas and/or a fluorocarbon gas. The hydrofluorocarbon gas can include CH2F2, CH3F; and/or CHF3. The fluorocarbon gas can include C4F8, C4F6 and/or C5F8.Type: ApplicationFiled: December 3, 2004Publication date: June 8, 2006Inventors: Gerardo Delgadino, Chang-Lin Hsieh, Yan Ye, Hyunjong Shim