Abstract: A transistor includes a gate electrode, a gate dielectric layer covering the gate electrode, an active layer covering the gate dielectric layer and including a first metal oxide material, and source/drain electrodes disposed on the active layer and made of a second metal oxide material with an electron concentration of at least about 1018 cm?3. A semiconductor structure and a manufacturing method are also provided.

Abstract: A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion chips from the first load-bearing structure; dividing the first portion chips into a plurality of blocks according to the photoelectric characteristic values, and each of the plurality of blocks comprising multiple chips of the first portion chips; and transferring the multiple chips of one of the plurality of blocks to a second load-bearing structure.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a bottom electrode layer over a substrate and forming a pinned layer over the bottom electrode layer. The method also includes forming a tunnel barrier layer over the pinned layer and forming a free layer over the tunnel barrier layer. The method also includes patterning the free layer, the tunnel barrier layer, and the pinned layer to form a magnetic tunnel junction (MTJ) stack structure and patterning the bottom electrode layer to form a bottom electrode structure under the MTJ stack structure. In addition, patterning the free layer includes using a first etching gas, and patterning the bottom electrode layer includes using a second etching gas, which is different from the first etching gas.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for manufacturing a memory device includes forming a first metal layer over a substrate, forming a magnetic tunnel junction (MTJ) layer stack over the first metal layer, forming a second metal layer over the MTJ layer stack, forming a hard mask layer over the second metal layer, performing a first etching process on the MTJ layer stack to form an MTJ structure and a redeposited layer on a sidewall of the MTJ structure, performing a second etching process to remove the redeposited layer, and performing a third etching process on the sidewall of the MTJ structure.

Abstract: A transistor includes a gate electrode, a gate dielectric layer covering the gate electrode, an active layer covering the gate dielectric layer and including a first metal oxide material, and source/drain electrodes disposed on the active layer and made of a second metal oxide material with an electron concentration of at least about 1018 cm?3. A semiconductor structure and a manufacturing method are also provided.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming a bottom electrode layer over a substrate and forming a pinned layer over the bottom electrode layer. The method also includes forming a tunnel barrier layer over the pinned layer and forming a free layer over the tunnel barrier layer. The method also includes patterning the free layer, the tunnel barrier layer, and the pinned layer to form a magnetic tunnel junction (MTJ) stack structure and patterning the bottom electrode layer to form a bottom electrode structure under the MTJ stack structure. In addition, patterning the free layer includes using a first etching gas, and patterning the bottom electrode layer includes using a second etching gas, which is different from the first etching gas.

Abstract: An integrated circuit includes a substrate, a dielectric layer over the substrate, a plurality of cells, a plurality of spacers and a plurality of conductive particles. Each of the cells includes a bottom portion in the dielectric layer and an upper portion protruding from the dielectric layer. The spacers are disposed over the dielectric layer and partially cover the upper portions of the cells, respectively. The spacers are disconnected from each other, and cover a first area of the dielectric layer and expose a second area of the dielectric layer. The conductive particles are disposed between the first area of the dielectric layer and the spacers.

Abstract: An integrated circuit includes a substrate, a dielectric layer over the substrate, a plurality of cells, a plurality of spacers and a plurality of conductive particles. Each of the cells includes a bottom portion in the dielectric layer and an upper portion protruding from the dielectric layer. The spacers are disposed over the dielectric layer and partially cover the upper portions of the cells, respectively. The spacers are disconnected from each other, and cover a first area of the dielectric layer and expose a second area of the dielectric layer. The conductive particles are disposed between the first area of the dielectric layer and the spacers.

Abstract: A disk device includes a frame defining a tray housing and a rail housing communicating with the tray housing; a tray releasably received in the tray housing in the frame; and a rail movably incorporated in the rail housing. The rail includes a slide for drawing the tray out of the frame, and a latching member for detachably engaging with the tray. The slide is movable along a first direction that exposes from the rail housing, the latching member is movable along a second direction substantially perpendicular to the first direction between a first position where the latching member is engaged with the tray and a second position where the latching member is disengaged with the tray.

Abstract: A hooking device includes a hook for clasping a latching device, a spring mounted to the hook for providing a restoration force to the hook, and a base securing the hook and the spring thereon. The hook includes a main portion, a catch portion, and a pair of shaft portions extending from the other end along opposite direction. The spring includes two winding portions, two first arms extending from ends of the winding portions, the first arms acting on the hook; and two second arms extending from the other ends of the winding portions. The base includes a base plate defining an opening, two supporting plates accommodating the shaft portions, two bearing plates extending from the base plate, the second arms acting on the bearing plate, and an elastic arm extending from the base plate pushing on the other end of the main portion of the hook.

Abstract: A locking device includes a case defining at least one slot therein, a hook module including at least one hook for passing through the at least one slot, a linkage module includes at least one first lever configured for shifting the at least one hook to move between a locking position and a releasing position, and a positioning module for releasably engaging with the first lever. When the at least one hook is shifted to the releasing position, the first lever is blocked by the positioning module, when the at least one hook is shifted to the locking position, the first lever is released by the positioning module.

Abstract: An electronic connecting device includes a plate defining an opening therein, a connector for being movable along the opening, a controller for shifting the connector to different height positions.

Abstract: A locking device includes a case defining at least one slot therein, a hook module including at least one hook for passing through the at least one slot, a linkage module includes at least one first lever configured for shifting the at least one hook to move between a locking position and a releasing position, and a positioning module for releasably engaging with the first lever. When the at least one hook is shifted to the releasing position, the first lever is blocked by the positioning module, when the at least one hook is shifted to the locking position, the first lever is released by the positioning module.

Abstract: A hooking device includes a hook for clasping the latching device, a spring mounted to the hook for providing a restoration force to the hook, and a base securing the hook and the spring thereon. The hook includes a main portion, a catch portion, and a pair of shaft portions extending from the other end along opposite direction. The spring includes two winding portions, two first arms extending from ends of the winding portions, the first arms acting on the hook; and two second arms extending from the other ends of the winding portions. The base includes a base plate defining an opening, two supporting plates accommodating the shaft portions, two bearing plates extending from the base plate, the second arms acting on the bearing plate, and an elastic arm extending from the base plate pushing on the other end of the main portion of the hook.

Abstract: A disk device includes a frame defining a tray housing and a rail housing communicating with the tray housing; a tray releasably received in the tray housing in the frame; and a rail movably incorporated in the rail housing. The rail includes a slide for drawing the tray out of the frame, and a latching member for detachably engaging with the tray. The slide is movable along a first direction that exposes from the rail housing, the latching member is movable along a second direction substantially perpendicular to the first direction between a first position where the latching member is engaged with the tray and a second position where the latching member is disengaged with the tray.