Patents by Inventor Chang-Miao LUI

Chang-Miao LUI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
    Publication number: 20210226018
    Abstract: A method including providing a device including a gate structure and a source/drain feature adjacent to the gate structure. An insulating layer (e.g., CESL, ILD) is formed over the source/drain feature. A trench is etched in the insulating layer to expose a surface of the source/drain feature. A semiconductor material is then formed in the etched trench on the surface of the source/drain feature. The semiconductor material is converted to a silicide.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 22, 2021
    Inventors: Xusheng WU, Chang-Miao LUI, Ying-Keung LEUNG, Huiling SHANG, Youbo LIN