Abstract: Provided a semiconductor memory device. The semiconductor memory device comprises a cell structure, and a peripheral circuit structure electrically connected to the cell structure. The cell structure includes a plurality of gate electrodes stacked in a vertical direction and spaced apart from each other in the vertical direction, a channel structure penetrating the plurality of gate electrodes in the vertical direction, and a bit-line connected to the channel structure. The peripheral circuit structure includes an active area, a gate structure on the active area, the gate structure intersecting the active area, a source/drain area on at least one side of the gate structure and in the active area, an insulating spacer covering the gate structure, a conductive spacer on a sidewall of the insulating spacer and electrically connected to the source/drain area, and a contact electrically connected to the conductive spacer.

Abstract: A vertical memory device includes a substrate, a plurality of channels extending in a first direction substantially vertical to a top surface of the substrate, a plurality of gate lines surrounding a predetermined number of channels from among the channels, a plurality of common wirings electrically connected to the gate lines, and a plurality of signal wirings electrically connected to the gate lines via the common wirings. The gate lines are arranged and spaced apart from one another along the first direction. Each common wiring is electrically connected to a corresponding gate line at a same level of the corresponding gate line via a corresponding contact.

Abstract: Disclosed is a cathode active material for a lithium secondary battery including a core containing lithium composite metal oxide, and a coating layer disposed on the core and including an amorphous phase, wherein the amorphous phase contains lithium oxide and boron oxide in a form of mixture.

Abstract: A system for predicting an adverse reaction of a patient, based on a real-time bio-signal of the patient, according to an embodiment of the disclosure, may include: a bio-signal measurement device configured to measure a bio-signal of the patient at a first time interval and transmit a measured result to a patient terminal at the first time interval; the patient terminal configured to collect the bio-signal measured at the first time interval from the bio-signal measurement device and transmit the collected bio-signal to a server at a second time interval; the server configured to receive the bio-signal from the patient terminal at the second time interval, based on the received bio-signal, identify whether a predetermined action is necessary for the patient at the second time interval, and when the predetermined action is necessary, transmit a message to a medical team terminal; and the medical team terminal configured to receive the message from the server when the predetermined action is necessary.

Abstract: Disclosed is a cathode active material for a lithium secondary battery including a core containing lithium composite metal oxide and a coating layer disposed on the core and having an amorphous phase, wherein the amorphous phase contains lithium oxide and tungsten oxide in a form of mixture.

Abstract: Disclosed is a cathode active material for a lithium secondary battery including a core containing lithium composite metal oxide and a coating layer disposed on the core and having an amorphous phase, wherein the amorphous phase contains lithium oxide, tungsten oxide, and boron oxide in a form of mixture.

Abstract: A mass spectrometry system includes a sample holder provided in a vacuum changer and on which a sample is disposed, an irradiator configured to perform sputtering or ionization on the sample, an analyzer configured to analyze an ionized sample generated from the sample by the irradiator, and a controller configured to control the irradiator or the analyzer and perform a first process and a second process. The first process is to determine position information of materials in the sample by irradiating a laser or ion beam to a portion of the sample, and the second process is to irradiate a laser or ion beam of a first output value to another portion of the sample in a section in which the materials in the sample change and irradiate a laser or ion beam of a second output value in other sections.

Abstract: A mixed gas cluster ion beam generator may include a nozzle chamber to contain a first mixed gas which is a mixed gas that is a mix of a first gas and a second gas, a cluster nozzle to spray gas received from the nozzle chamber in a cluster form, an ionizer to ionize a gas cluster sprayed by the cluster nozzle, and an ion accelerator to emit an ion beam to the outside by accelerating the gas cluster ionized by the ionizer by generating a potential difference to the ionized gas cluster.

Abstract: A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.

Abstract: A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.

Abstract: A vertical memory device includes a substrate, a plurality of channels extending in a first direction substantially vertical to a top surface of the substrate, a plurality of gate lines surrounding a predetermined number of channels from among the channels, a plurality of common wirings electrically connected to the gate lines, and a plurality of signal wirings electrically connected to the gate lines via the common wirings. The gate lines are arranged and spaced apart from one another along the first direction. Each common wiring is electrically connected to a corresponding gate line at a same level of the corresponding gate line via a corresponding contact.

Abstract: A mass spectrometry system includes a sample holder provided in a vacuum changer and on which a sample is disposed, an irradiator configured to perform sputtering or ionization on the sample, an analyzer configured to analyze an ionized sample generated from the sample by the irradiator, and a controller configured to control the irradiator or the analyzer and perform a first process and a second process. The first process is to determine position information of materials in the sample by irradiating a laser or ion beam to a portion of the sample, and the second process is to irradiate a laser or ion beam of a first output value to another portion of the sample in a section in which the materials in the sample change and irradiate a laser or ion beam of a second output value in other sections.

Abstract: A positive active material for a rechargeable lithium battery, a method for manufacturing the same, and a rechargeable lithium battery including the same are provided. A positive active material for a rechargeable lithium battery includes a compound that is capable of reversibly intercalating or deintercalating lithium, wherein the compound is formed of a core portion and a coating layer, the core portion is doped with M, and the coating layer includes Al and B, wherein M is Zr, Ti, Mg, Ca, Al, B, V, Zn, Mo, Ni, Co, Mn, or a combination thereof.

Abstract: Disclosed is a device for generating an organic molecular cluster ion beam, the device including a receiver configured to accommodate an organic material, a cluster generator configured to generate a cluster by supersonic expanding the organic material accommodated in the receiver at a high speed, a photo-ionizer configured to temporarily accommodate the cluster that is generated through the cluster generator, an ultraviolet (UV) light source configured to irradiate an UV pulse to the photo-ionizer to ionize the cluster, and entrance electrodes disposed at both sides of the photo-ionizer and configured to provide a potential difference to the photo-ionizer to generate a cluster ion beam.

Abstract: An ion beam generating device includes a liquid metal ion source configured to melt metal and emit an ion beam, and an extractor disposed under the liquid metal ion source and configured to extract the ion beam emitted from the liquid metal ion source. The liquid metal ion source includes a storage configured to accommodate the metal, an emitter configured to receive the metal from the storage and emit the ion beam, and a heater configured to heat the emitter or the storage. The heater is configured to directly heat the metal accommodated in the storage to melt the metal into a liquid state, and an amount of the ion beam to be extracted is controlled by a voltage difference that changes based on a distance between the emitter and the extractor.

Abstract: Disclosed is a device for generating an organic molecular cluster ion beam, the device including a receiver configured to accommodate an organic material, a cluster generator configured to generate a cluster by supersonic expanding the organic material accommodated in the receiver at a high speed, a photo-ionizer configured to temporarily accommodate the cluster that is generated through the cluster generator, an ultraviolet (UV) light source configured to irradiate an UV pulse to the photo-ionizer to ionize the cluster, and entrance electrodes disposed at both sides of the photo-ionizer and configured to provide a potential difference to the photo-ionizer to generate a cluster ion beam.

Abstract: The present invention relates to a nickel-based composite oxide for a lithium secondary battery, and a lithium secondary battery including the same, and provides a nickel-based composite oxide for a lithium secondary battery, which comprises: a core part; and at least one tunnel connected from the inside of the core part to the outside thereof, wherein the tunnel has a diameter of 100 nm or larger, and the composite oxide further comprises coating layers located inside the tunnel and outside the core part.

Abstract: A vertical memory device includes a substrate, a plurality of channels extending in a first direction substantially vertical to a top surface of the substrate, a plurality of gate lines surrounding a predetermined number of channels from among the channels, a plurality of common wirings electrically connected to the gate lines, and a plurality of signal wirings electrically connected to the gate lines via the common wirings. The gate lines are arranged and spaced apart from one another along the first direction. Each common wiring is electrically connected to a corresponding gate line at a same level of the corresponding gate line via a corresponding contact.

Abstract: In a method of operating a nonvolatile memory device, a first sub-block to be erased is selected in a first memory block including the first sub-block and a second sub-block adjacent to the first sub-block, in response to a erase command and an address. The first sub-block includes memory cells connected to a plurality of word-lines including at least one boundary word-line adjacent to the second sub-block and internal word-lines other than the at least one boundary word-line. An erase voltage is applied to a substrate in which the first memory block is formed. Based on a voltage level of the erase voltage applied to the substrate, applying, a first erase bias condition to the at least one boundary word-line and a second erase bias condition different from the first erase bias condition to the internal word-lines during an erase operation being performed on the first sub-block.

Abstract: A vertical memory device includes a substrate, a plurality of channels extending in a first direction substantially vertical to a top surface of the substrate, a plurality of gate lines surrounding a predetermined number of channels from among the channels, a plurality of common wirings electrically connected to the gate lines, and a plurality of signal wirings electrically connected to the gate lines via the common wirings. The gate lines are arranged and spaced apart from one another along the first direction. Each common wiring is electrically connected to a corresponding gate line at a same level of the corresponding gate line via a corresponding contact.