Abstract: A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, the patterned mask layer having a plurality of first features with a first pitch. The method includes patterning the material layer by using the patterned mask layer as a mask to form the first features in the material layer. The method includes trimming the patterned mask layer, after patterning the material layer, to form a trimmed patterned mask layer. The method further includes introducing a plurality of dopants into the material layer exposed by the trimmed patterned mask layer to form doped regions having a second pitch, wherein the second pitch is different from the first pitch. The method further includes removing the trimmed patterned mask layer to expose un-doped regions in the material layer; and removing the un-doped regions to form a plurality of second features corresponding to the respective doped regions.

Abstract: A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, the patterned mask layer having a plurality of first features with a first pitch. The method includes patterning the material layer by using the patterned mask layer as a mask to form the first features in the material layer. The method includes trimming the patterned mask layer, after patterning the material layer, to form a trimmed patterned mask layer. The method further includes introducing a plurality of dopants into the material layer exposed by the trimmed patterned mask layer to form doped regions having a second pitch, wherein the second pitch is different from the first pitch. The method further includes removing the trimmed patterned mask layer to expose un-doped regions in the material layer; and removing the un-doped regions to form a plurality of second features corresponding to the respective doped regions.

Abstract: A method of forming an integrated circuit is disclosed. A second material layer is formed on a first material layer. A patterned mask layer having a plurality of first features with a first pitch P1 is formed on the second material layer. The second material layer is etched by using the patterned mask layer as a mask to form the first features in the second material layer. The patterned mask layer is trimmed. A plurality of dopants is introduced into the second material layer not covered by the trimmed patterned mask layer. The trimmed patterned mask layer is removed to expose un-doped second material layer. The un-doped second material layer is selectively removed to form a plurality of second features with a second pitch P2. P2 is smaller than P1.

Abstract: A method of forming an integrated circuit is disclosed. A second material layer is formed on a first material layer. A patterned mask layer having a plurality of first features with a first pitch P1 is formed on the second material layer. The second material layer is etched by using the patterned mask layer as a mask to form the first features in the second material layer. The patterned mask layer is trimmed. A plurality of dopants is introduced into the second material layer not covered by the trimmed patterned mask layer. The trimmed patterned mask layer is removed to expose un-doped second material layer. The un-doped second material layer is selectively removed to form a plurality of second features with a second pitch P2. P2 is smaller than P1.