Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

Abstract: A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

Abstract: A three-layer micro electro mechanical system (MEMS) spring pin includes a lower-layer spring pin in which a lower-layer wave is disposed between and connected to a lower-layer top plunger and a lower-layer bottom plunger, an upper-layer spring pin in which an upper-layer wave is disposed between and connected to an upper-layer top plunger and an upper-layer bottom plunger, a middle-layer top tip interposed between the upper-layer top plunger and the lower-layer top plunger, and a middle-layer bottom tip interposed between the upper-layer bottom plunger and the lower-layer bottom plunger. According to the above-described structure, effects are expected in which bending is prevented, a stroke is stabilized due to the multi-layer spring, and contact characteristics are enhanced due to the multi-layer plunger.

Abstract: A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

Abstract: Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include Ag3Sn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

Abstract: Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include Ag3Sn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

Abstract: According to example embodiments of inventive concepts, a power device includes a semiconductor structure having a first surface facing a second surface, an upper electrode, and a lower electrode. The upper electrode may include a first contact layer that is on the first surface of the semiconductor structure, and a first bonding pad layer that is on the first contact layer and is formed of a metal containing nickel (Ni). The lower electrode may include a second contact layer that is under the second surface of the semiconductor structure, and a second bonding pad layer that is under the second contact layer and is formed of a metal containing Ni.

Abstract: According to example embodiments of inventive concepts, a power device includes a semiconductor structure having a first surface facing a second surface, an upper electrode, and a lower electrode. The upper electrode may include a first contact layer that is on the first surface of the semiconductor structure, and a first bonding pad layer that is on the first contact layer and is formed of a metal containing nickel (Ni). The lower electrode may include a second contact layer that is under the second surface of the semiconductor structure, and a second bonding pad layer that is under the second contact layer and is formed of a metal containing Ni.