Abstract: An anthropomorphic dummy head for use in a vehicle crash test is provided that includes a skull member forming a shape of the dummy head and an eye damage measuring part for estimating damage to an eye, wherein the eye damage measuring part comprises a housing disposed inside the skull member, the housing being closed and filled with compressible gas; a one-side-open cylinder that is fixed to a circumference of the housing; a piston that is slidably inserted into the one-side-open cylinder, one end of which is provided with a plate onto which an impact from an outside of the housing is transmitted; and a pressure sensor detecting pressure inside the housing.

Abstract: An anthropomorphic dummy head for use in a vehicle crash test is provided that includes a skull member forming a shape of the dummy head and an eye damage measuring part for estimating damage to an eye, wherein the eye damage measuring part comprises a housing disposed inside the skull member, the housing being closed and filled with compressible gas; a one-side-open cylinder that is fixed to a circumference of the housing; a piston that is slidably inserted into the one-side-open cylinder, one end of which is provided with a plate onto which an impact from an outside of the housing is transmitted; and a pressure sensor detecting pressure inside the housing.

Abstract: A simulation method for simulating in a lithographic process is disclosed, and the method can expect a size of a resist pattern by obtaining a diffused aerial image model(DAIM) by determining a simplified model in a aerial image to represent a resist process without simulating full processes including a resist process, and then applying the DAIM to a threshold model.

Abstract: A phase shift mask capable of forming contact holes having a micro dimension smaller than the wavelength of exposure light while being spaced at small intervals. The phase shift mask includes a quartz substrate, a chromium pattern formed on the quartz substrate along a peripheral edge of the quartz substrate, and a plurality of uniformly spaced phase shift layer patterns formed on a portion of the quartz substrate not covered with the chromium pattern, each of the phase shift layer patterns having a desired size. Each of the phase shift layer patterns has a line width larger than the wavelength of a light source used in a light exposure procedure.

Abstract: A method for detecting the phase error of a phase shift mask simply and with ease is disclosed and comprises the steps of: arranging a plurality of phase shift patterns, each having a predetermined width and serving to shift the light transmitted through predetermined regions of a transparent substrate of the phase shift mask, at a regular space on the transparent substrate; arranging a pattern for detecting phase error in which a light screen with a predetermined width is located between the predetermined regions of the transparent substrate and the phase shift mask; patterning a wafer by use of the phase shift mask and the patterns for detecting phase error; comparing the sizes by defocuses of the patterns in which phase is shifted with those of the patterns in which phase is not shifted; and utilizing the difference in the pattern size to detect the phase error.

Abstract: An overlay mark for detecting focus and exposure energy during an alignment process for forming a pattern of a semiconductor device is disclosed. The overlay mark includes an inner box and an outer box to concurrently measure exposure energy and focus, wherein, the changes of the exposure energy and the focus are respectively represented by phase shift between the inner and outer boxes in X-axis and Y-axis, the X-axis and the Y-axis representing phase shift respectively to indicate the exposure energy and the focus.

Abstract: A phase shift mask for forming contact holes in the fabrication of highly integrated semiconductor devices. The phase shift mask includes a transparent substrate, a plurality of light exposure regions respectively defined by patterns formed on portions of the transparent substrate corresponding to contact holes which will be formed using the phase shift mask, the patterns including those comprised of a first phase shift film and those comprised of a second phase shift film exhibiting a difference in phase from the first phase shift film. The phase shift mask also includes a plurality of light shield regions respectively defined by patterns formed on portions of the transparent substrate not covered with the patterns defining the light exposure regions.