Patents by Inventor Chang Rock Song
Chang Rock Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7153739Abstract: The present invention discloses methods for manufacturing a capacitor of a semiconductor device employing doped silicon film as an electrode and an oxide film-nitride film-oxide film as a dielectric film. An interlayer insulating film is formed on a semiconductor substrate. A storage electrode is formed consisting of a doped polysilicon on the interlayer insulating film. A first oxide film is formed on the storage electrode that is subjected to a thermal treatment in an atmosphere containing an n-type impurity to implant the impurity into the first oxide film. A nitride film is formed on the first oxide film, whereby the impurity in the first oxide film is diffused into the nitride film. A second oxide film is formed on the nitride film. A plate electrode is then formed on the second oxide film.Type: GrantFiled: November 26, 2003Date of Patent: December 26, 2006Assignee: Hynix Semiconductor Inc.Inventors: Chang Rock Song, Sang Ho Woo, Dong Su Park, Cheol Hwan Park, Tae Hyeok Lee
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Patent number: 7084072Abstract: Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of the substrate, depositing a nitride spacer layer on the buffer oxide layer, depositing an oxide spacer layer on the nitride spacer layer, forming an oxide spacer at the peripheral region of the substrate, and removing the oxide spacer layer remaining in the cell region. The annealing step is additionally carried out after depositing the buffer oxide layer so as to improve the interfacial surface characteristic and film quality, so that oxide etchant is prevented from penetrating into the silicon substrate during the wet dip process. Unnecessary voids are prevented from being created in the silicon substrate.Type: GrantFiled: June 23, 2004Date of Patent: August 1, 2006Assignee: Hynix Semiconductor Inc.Inventors: Cheol Hwan Park, Sang Ho Woo, Chang Rock Song, Dong Su Park, Tae Hyeok Lee
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Patent number: 6964930Abstract: In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.Type: GrantFiled: December 18, 2003Date of Patent: November 15, 2005Assignee: Hynix Semiconductor Inc.Inventors: Dong Su Park, Tae Hyeok Lee, Chang Rock Song, Cheol Hwan Park
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Patent number: 6818497Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention includes the steps of forming a contact hole in an insulating layer formed on a substrate; forming a plug in the contact hole, wherein the plug contains a nitride layer; forming a seed layer on the insulating layer and in the contact hole; forming a sacrificial layer including a trench overlapped with the contact hole; forming a Ru bottom electrode in the trench with electrochemical deposition; removing the sacrificial layer and exposing the Ru bottom electrode, wherein the seed layer not covered with the Ru bottom electrode is exposed; removing the exposed seed layer; forming a dielectric layer on the Ru bottom electrode; and forming a top electrode on the dielectric layer.Type: GrantFiled: December 30, 2002Date of Patent: November 16, 2004Assignee: Hynix Semiconductor INCInventors: Chang-Rock Song, Hyung-Bok Choi
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Publication number: 20040219802Abstract: Disclosed is a method of fabricating a dielectric layer, the method comprising the steps of: providing a semiconductor substrate which has been washed; forming a first nitride film by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment; forming a first oxide film by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by means of air introduced while the substrate is unloaded; forming a second nitride film by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment; and forming a second oxide film by subjecting the top surface of the second nitride film to a second oxide treatment.Type: ApplicationFiled: December 18, 2003Publication date: November 4, 2004Inventors: Dong Su Park, Tae Hyeok Lee, Chang Rock Song, Cheol Hwan Park
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Patent number: 6797583Abstract: A method of manufacturing a capacitor in semiconductor devices, the method comprising forming a silicon oxide film on a surface of a silicon substrate; forming a nitride film on said silicon oxide film; forming a contact hole; depositing a doped polysilicon layer; performing an etch-back process to remove a portion of said doped polysilicon layer; forming an ohmic contact layer over said doped polysilicon layer in said contact hole; forming an anti-diffusion film on said ohmic contact layer; forming a silicate glass film; forming a concave hole by etching a portion of said silicate glass film; forming a Ruthenium lower electrode on said internal wall of said concave hole; forming a BST dielectric film on said first Ruthenium electrode; crystallizing said BST dielectric film; forming an upper electrode on said BST dielectric film, thereby forming a capacitor; and performing a thermal treatment to stabilize said capacitor.Type: GrantFiled: October 19, 2001Date of Patent: September 28, 2004Assignee: Hynix Semiconductor INCInventor: Chang Rock Song
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Publication number: 20040161890Abstract: The present invention discloses methods for manufacturing a capacitor of a semiconductor device employing doped silicon film as an electrode and an oxide film-nitride film-oxide film as a dielectric film. An interlayer insulating film is formed on a semiconductor substrate. A storage electrode is formed consisting of a doped polysilicon on the interlayer insulating film. A first oxide film is formed on the storage electrode that is subjected to a thermal treatment in an atmosphere containing an n-type impurity to implant the impurity into the first oxide film. A nitride film is formed on the first oxide film, whereby the impurity in the first oxide film is diffused into the nitride film. A second oxide film is formed on the nitride film. A plate electrode is then formed on the second oxide film.Type: ApplicationFiled: November 26, 2003Publication date: August 19, 2004Applicant: Hynix Semiconductor Inc.Inventors: Chang Rock Song, Sang Ho Woo, Dong Su Park, Cheol Hwan Park, Tae Hyeok Lee
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Patent number: 6699769Abstract: Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH4)2(NO3)6 solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a substrate; b) forming a plug including nitride in the contact hole; c) forming a Ru seed layer in the contact hole and on the insulation layer; d) forming a sacrificial layer including an open area overlapped with the contact hole on the Ru seed layer; e) forming a Ru layer for an electrode of the capacitor in the open area by performing electrochemical deposition; f) removing the sacrificial layer, whereby the Ru seed layer not covered with the Ru layer is exposed; and g) etching the exposed Ru seed layer by using an aqueous solution including Ce(NH4)2(NO3)6.Type: GrantFiled: December 30, 2002Date of Patent: March 2, 2004Assignee: Hynix Semiconductor Inc.Inventors: Chang-Rock Song, Hyung-Bok Choi
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Publication number: 20030203588Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention includes the steps of forming a contact hole in an insulating layer formed on a substrate; forming a plug in the contact hole, wherein the plug contains a nitride layer; forming a seed layer on the insulating layer and in the contact hole; forming a sacrificial layer including a trench overlapped with the contact hole; forming a Ru bottom electrode in the trench with electrochemical deposition; removing the sacrificial layer and exposing the Ru bottom electrode, wherein the seed layer not covered with the Ru bottom electrode is exposed; removing the exposed seed layer; forming a dielectric layer on the Ru bottom electrode; and forming a top electrode on the dielectric layer.Type: ApplicationFiled: December 30, 2002Publication date: October 30, 2003Inventors: Chang-Rock Song, Hyung-Bok Choi
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Publication number: 20030203570Abstract: Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH4)2(NO3)6 solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a substrate; b) forming a plug including nitride in the contact hole; c) forming a Ru seed layer in the contact hole and on the insulation layer; d) forming a sacrificial layer including an open area overlapped with the contact hole on the Ru seed layer; e) forming a Ru layer for an electrode of the capacitor in the open area by performing electrochemical deposition; f) removing the sacrificial layer, whereby the Ru seed layer not covered with the Ru layer is exposed; and g) etching the exposed Ru seed layer by using an aqueous solution including Ce(NH4)2(NO3)6.Type: ApplicationFiled: December 30, 2002Publication date: October 30, 2003Inventors: Chang-Rock Song, Hyung-Bok Choi
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Patent number: 6583021Abstract: Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti1−xHfxN layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti1−xHfxN layer; and forming a HfO2 layer on an interface between the electrode layer and the Ti1−xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere.Type: GrantFiled: May 9, 2002Date of Patent: June 24, 2003Assignee: Hynix Semiconductor Inc.Inventor: Chang-Rock Song
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Patent number: 6541332Abstract: The disclosure relates to a method for fabricating a capacitor that prevents a rise in the production cost and complexity of production processes caused by performing deposition and subsequent treatment thereof whenever a layer is formed. The disclosure provides a method for fabricating a capacitor, including the steps of: forming a Ti1-xZrxN layer on a substrate, wherein x is in the range of 0 to 0.5, inclusive; forming an electrode layer on the Ti1-xZrxN layer; and forming a ZrO2 layer on an interface between the electrode layer and the Ti1-xZrxN layer by performing a thermal treatment in an atmosphere containing oxygen gas, whereby a capacitor having a bottom electrode formed with the Ti1-xZrxN layer, a dielectric layer formed with the ZrO2 layer, and a top electrode formed with the electrode layer is fabricated.Type: GrantFiled: May 15, 2002Date of Patent: April 1, 2003Assignee: Hynix Semiconductor IncInventor: Chang-Rock Song
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Publication number: 20030003648Abstract: Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti1−x HfxN layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti1−xHfxN layer; and forming a HfO2 layer on an interface between the electrode layer and the Ti1−xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere.Type: ApplicationFiled: May 9, 2002Publication date: January 2, 2003Applicant: Hynix Semiconductor, Inc.Inventor: Chang-Rock Song
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Publication number: 20030003650Abstract: The disclosure relates to a method for fabricating a capacitor that prevents a rise in the production cost and complexity of production processes caused by performing deposition and subsequent treatment thereof whenever a layer is formed. The disclosure provides a method for fabricating a capacitor, including the steps of: forming a Ti1-xZrxN layer on a substrate, wherein x is in the range of 0 to 0.5, inclusive; forming an electrode layer on the Ti1-xZrxN layer; and forming a ZrO2 layer on an interface between the electrode layer and the Ti1-xZrxN layer by performing a thermal treatment in an atmosphere containing oxygen gas, whereby a capacitor having a bottom electrode formed with the Ti1-xZr|xN layer, a dielectric layer formed with the ZrO2 layer, and a top electrode formed with the electrode layer is fabricated.Type: ApplicationFiled: May 15, 2002Publication date: January 2, 2003Inventor: Chang-Rock Song
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Publication number: 20020048878Abstract: A method of manufacturing a capacitor in semiconductor devices, the method comprising forming a silicon oxide film on a surface of a silicon substrate; forming a nitride film on said silicon oxide film; forming a contact hole; depositing a doped polysilicon layer; performing an etch-back process to remove a portion of said doped polysilicon layer; forming an ohmic contact layer over said doped polysilicon layer in said contact hole; forming an anti-diffusion film on said ohmic contact layer; forming a silicate glass film; forming a concave hole by etching a portion of said silicate glass film; forming a Ruthenium lower electrode on said internal wall of said concave hole; forming a BST dielectric film on said first Ruthenium electrode; crystallizing said BST dielectric film; forming an upper electrode on said BST dielectric film, thereby forming a capacitor; and performing a thermal treatment to stabilize said capacitor.Type: ApplicationFiled: October 19, 2001Publication date: April 25, 2002Applicant: Hynix Semiconductor Inc.Inventor: Chang Rock Song