Abstract: The present invention relates to an air-coupled type bistatic ground penetrating radar (GPR) antenna and, more specifically, to an air-coupled type ground penetrating radar (GPR) antenna which reduces reception of a direct wave, which is a factor limiting imaging performance of a system when being received at a receiving side of the GPR antenna, by placing a loop antenna at a receiver point so as to be vertical to an antenna plane with respect to a polarization direction of a transmitting antenna and configuring a feeding direction to be orthogonal to a feeding direction of a transmitter and the ground surface.

Abstract: The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

Abstract: The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

Abstract: The present invention relates to a polysilicon filament manufacturing device, and more specifically, to a polysilicon filament binding device for manufacturing a polysilicon filament having a desired length by connecting polysilicon fragments cut from damage, etc. The present invention provides a polysilicon filament binding device comprising: a body part having a barrel-shape; a guide part provided inside the body part, guiding incoming polysilicon fragments; and a main light source for heating the binding surfaces of the polysilicon fragments.