Abstract: A Gysel combiner free from signal interference includes a first transmission line connected to a first port, a 12 transmission line connected between the first transmission line and a second port, a 13 transmission line connected between the first transmission line and a third port, a 24 transmission line connected between the 12 transmission line and a fourth port, a 35 transmission line connected between the 13 transmission line and a fifth port, a 45-1 transmission line connected to the 24 transmission line, and a 45-2 transmission line connected between the 45-1 transmission line and the fifth port, on a printed circuit board.

Abstract: A method of detecting a heart rate using a photoplethysmography (PPG) signal with a removed motion artifact includes receiving, by a heart rate measurement device, a PPG signal and an acceleration signal; converting, by the heart rate measurement device, the PPG signal and the acceleration signal into signals in a frequency domain; calculating, by the heart rate measurement device, a difference between the PPG signal and the acceleration signal in the frequency domain and obtaining a PPG signal with a removed motion artifact; and estimating, by the heart rate measurement device, a heart rate based on the PPG signal with the removed motion artifact.

Abstract: A modifying agent, a modified conjugated diene polymer prepared using the same, a method for preparing a modified conjugated diene polymer, and a rubber composition including a modified conjugated diene polymer are disclosed herein. In some embodiments, a modifying agent comprises a compound represented by formula 1. The modifying agent is capable of improving processability of a rubber composition including the polymer prepared using the modifying agent. Fuel consumption properties of a car using tires including the rubber composition may be improved.

Abstract: A method of generating an image according to the present invention includes receiving a specific content selected from a user terminal among a plurality of contents provided from a content providing service, specifying a source image based on the selected specific content, generating a resulting image using the source image and a drawing style of the specific content, and providing the resulting image to the user terminal.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.

Abstract: An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.

Abstract: A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.

Abstract: A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: A modified conjugated diene-based polymer and a rubber composition including the same are disclosed herein. In some embodiments, the modified conjugated diene-based polymer includes a modified monomer-derived functional group represented by Formula 1, and an aminoalkoxysilane-based modifier-derived functional group at least one end thereof, wherein the polymer having a unimodal molecular weight distribution, and a polydispersity index (PDI) of 1.0 or more to less than 1.7. The polymer has a narrow and unimodal molecular weight distribution, and has excellent tensile properties and viscoelastic properties while having excellent processability.

Abstract: A modified conjugated diene-based polymer and a rubber composition including the same are disclosed herein. In some embodiments, the modified conjugated diene-based polymer includes a modified monomer-derived functional group represented by Formula 1, and an aminoalkoxysilane-based modifier-derived functional group at least one end thereof, wherein the polymer having a unimodal molecular weight distribution, and a polydispersity index (PDI) of 1.0 or more to less than 1.7. The polymer has a narrow and unimodal molecular weight distribution, and has excellent tensile properties and viscoelastic properties while having excellent processability.

Abstract: A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF2, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.

Abstract: This disclosure provides a rubber composition that can realize excellent low heat generating properties without deteriorating other performance. The rubber composition contains a rubber component and a filler, where the rubber component contains a conjugated diene-based polymer modified with a modifier containing a compound represented by the formula (1).

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).

Abstract: One illustrative IC product disclosed herein includes first and second final gate structures and an insulating gate separation structure positioned between the first and second final gate structures. In one embodiment, the insulating gate separation structure has a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface, wherein the substantially horizontally oriented bottom central surface is positioned a first level above the substrate and the substantially horizontally oriented recessed surface is positioned at a second level above the substrate, wherein the second level is greater than the first level.

Abstract: A modifying agent, a modified conjugated diene polymer prepared using the same, a method for preparing a modified conjugated diene polymer, and a rubber composition including a modified conjugated diene polymer are disclosed herein. In some embodiments, a modifying agent comprises a compound represented by formula 1. The modifying agent is capable of improving processability of a rubber composition including the polymer prepared using the modifying agent. Fuel consumption properties of a car using tires including the rubber composition may be improved.

Abstract: The disclosure an air conditioning system and a method of controlling the same. During the heating operation of the A2W indoor unit, the A2A valve that connects the outdoor unit to the A2A indoor unit is closed to prevent the inflow of the refrigerant into the A2A indoor unit, so it is possible to prevent performance degradation by improving performance loss due to refrigerant bypass to a stationary A2A indoor unit. In addition, in order to improve the performance due to deterioration of heating performance, the system itself can cope with a control algorithm without any additional hardware configuration, thereby minimizing the installation cost.

Abstract: A modified conjugated diene-based polymer and a rubber composition including a modified conjugated diene-based polymer are disclosed herein. In some embodiments, a modified conjugated diene-based polymer includes a functional group derived from a modification initiator at one terminal and a functional group derived from a modifier represented by the Formula 2 or Formula 3 at the other terminal, wherein the modified conjugated diene-based polymer having a unimodal molecular weight distribution, and a polydispersity index of 1.0 to less than 1.7. The modified conjugated diene-based polymer prepared by continuous polymerization and having remarkable processability, narrow molecular weight distribution and excellent physical properties.

Abstract: A Field Effect Transistor (FET) device and a method for manufacturing it are disclosed. The FET device contains a graphene layer, a composite gate dielectric layer disposed above the graphene layer, wherein the composite gate layer is passivated with fluorine, and a metal gate disposed above the composite gate dielectric layer. The method disclosed teaches how to manufacture the FET device.