Patents by Inventor Chang Seok SONG

Chang Seok SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection device
    Patent number: 11916063
    Abstract: An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: February 27, 2024
    Assignee: SK hynix Inc.
    Inventors: Joung Cheul Choi, Chang Seok Song
  • Electrostatic discharge protection device
    Patent number: 11742343
    Abstract: An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: August 29, 2023
    Assignee: SK hynix Inc.
    Inventors: Joung Cheul Choi, Chang Seok Song
  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING AN ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
    Publication number: 20230049774
    Abstract: A semiconductor integrated circuit device may include a first region, a second region, a pad structure and an electrostatic discharge (ESD) connection. The first region may be positioned adjacent to a semiconductor substrate. An ESD protection circuit may be integrated in the first region. The second region may be stacked on the first region. A plurality of memory cells may be formed in the second region. The pad structure may be arranged over the second region to receive an external voltage. The ESD connection may include a plurality of lower conductive wirings in the first region. At least one of the lower conductive wirings may be electrically connected with the ESD protection circuit. The at least one of the lower conductive wirings may be drawn to a portion corresponding to the pad structure.
    Type: Application
    Filed: March 3, 2022
    Publication date: February 16, 2023
    Inventors: Chang Seok SONG, Jin Woo KIM, Yoon Sung LEE, Dong Ju LIM
  • ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    Publication number: 20210366897
    Abstract: An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.
    Type: Application
    Filed: August 9, 2021
    Publication date: November 25, 2021
    Inventors: Joung Cheul CHOI, Chang Seok SONG
  • ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    Publication number: 20210366898
    Abstract: An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.
    Type: Application
    Filed: August 9, 2021
    Publication date: November 25, 2021
    Inventors: Joung Cheul CHOI, Chang Seok SONG
  • Electrostatic discharge protection device
    Patent number: 11088133
    Abstract: An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: August 10, 2021
    Assignee: SK hynix Inc.
    Inventors: Joung Cheul Choi, Chang Seok Song
  • ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    Publication number: 20200194424
    Abstract: An electrostatic discharge (ESD) protection device includes a pad, a diode, a gate ground NMOS (GGNMOS) transistor and a thyristor. The diode includes an anode connected with the pad. The GGNMOS transistor is connected between a cathode of the diode and a ground terminal. The thyristor is formed between the diode and the ground terminal when an ESD current may flow from the pad.
    Type: Application
    Filed: August 29, 2019
    Publication date: June 18, 2020
    Inventors: Joung Cheul CHOI, Chang Seok SONG