Patents by Inventor Chang-Sheng Lee

Chang-Sheng Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220301178
    Abstract: An image adjusting method including the following steps is provided. Firstly, the original image is divided into a plurality of image areas by a plurality of mutually intersecting virtual lines, wherein the image areas include a plurality of edge areas, each being defined by at least one original image edge of the original image and at least two of the virtual lines. Then, the coordinate of at least one intersection of at least one of the virtual lines and the original image edge are changed to obtain a deformed image edge. Subsequently, at least one original pixel located in one of the edge regions in the original image is repositioned according to the at least two of the virtual lines and the deformed image edge.
    Type: Application
    Filed: March 10, 2022
    Publication date: September 22, 2022
    Applicant: BENQ CORPORATION
    Inventors: Chia-Nan SHIH, Chih-Pen HUANG, Chang-Sheng LEE
  • Patent number: 11434394
    Abstract: Articles having a thermal imprinted adhesive on a substrate of a plurality of certain conicals have improved bonding strength.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: September 6, 2022
    Assignees: The Procter & Gamble Company, Agency for Science, Technology and Research
    Inventors: Fung Ling Yap, Chang Sheng Lee, Siew Ling Chong, Zhan Cheng
  • Publication number: 20220155137
    Abstract: A vibration sensor senses vibrations generated by an object to generate a noise signal. A processor obtains a structure vibration level spectrum from the noise signal, uses equalization parameters and A_weighting parameters to adjust the structure vibration level spectrum to generate a sound pressure level spectrum, and uses the sound pressure level spectrum to calculate a noise value of the object.
    Type: Application
    Filed: August 18, 2021
    Publication date: May 19, 2022
    Applicant: BENQ CORPORATION
    Inventors: Shih-Pin Chen, Wen-Lun Chien, Chin-Fu Chiang, Chang-Sheng Lee
  • Publication number: 20220061694
    Abstract: A patient monitoring system includes a microphone that collects audio data from a patient. The audio data is used to generate audio characteristics for categorization of the audio data and analysis of the audio data to determine a patient health status. The audio characteristics and the patient health status are tracked over time and utilized to monitor a respiratory condition of the patient. The system determines the patient health status based on a comparison of the audio characteristics with a database of audio characteristics associated with recorded health statuses of various patients. The system generates a report of the current patient health status based on the database of audio characteristics and associated health statuses.
    Type: Application
    Filed: September 1, 2021
    Publication date: March 3, 2022
    Applicant: Hill-Rom Services PTE. LTD.
    Inventors: Aaron A. Ayu, Helmi Kurniawan, Chang Sheng Lee, Bobby Gee Han Png, Yaolong Lou
  • Patent number: 11265593
    Abstract: A method for controlling a display device includes establishing a data link between the display device and a hardware dongle, generating a second interface by the display device through the hardware dongle after the data link is established, generating a control signal by the display device through the second interface, and executing at least one function according to the control signal. A first interface is stored in the display device. The first interface and the second interface are different. At least one first function is supported by the display device. At least one second function is supported by the hardware dongle. The at least one first function and the at least one second function are integrated for generating the second interface by the display device after the data link is established.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: March 1, 2022
    Assignees: BENQ CORPORATION
    Inventors: Chen-Cheng Huang, Chang-Sheng Lee
  • Publication number: 20210376124
    Abstract: A semiconductor device includes a substrate, an isolation structure on the substrate, a fin protruding from the substrate and through the isolation structure, a gate stack engaging the fin, and a gate spacer on sidewalls of the gate stack. The gate spacer includes an inner sidewall facing the gate stack and an outer sidewall opposing the inner sidewall. The inner sidewall has a first height measured from a top surface of the fin and a bowed structure in a top portion of the inner sidewall. The bowed structure extends towards the gate stack for a first lateral distance measured from a middle point of the inner sidewall. The first lateral distance is less than about 8% of the first height.
    Type: Application
    Filed: August 5, 2021
    Publication date: December 2, 2021
    Inventors: Wei-Yu Tsai, Fu-Yao Nien, Hong-Wei Huang, Chang-Sheng Lee
  • Patent number: 11088262
    Abstract: A method includes providing a structure having a substrate and a fin protruding from the substrate; forming a dummy gate stack over the fin; forming a gate spacer on sidewalls of the dummy gate stack; removing the dummy gate stack using a radical etch process, resulting in a gate trench; and forming a metal gate stack in the gate trench.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: August 10, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Yu Tsai, Fu-Yao Nien, Hong-Wei Huang, Chang-Sheng Lee
  • Publication number: 20200381287
    Abstract: An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: August 14, 2020
    Publication date: December 3, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Wei-Jen CHEN, Yi-Chen CHIANG, Tsang-Yang LIU, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Publication number: 20200366864
    Abstract: A method for controlling a display device includes establishing a data link between the display device and a hardware dongle, generating a second interface by the display device through the hardware dongle after the data link is established, generating a control signal by the display device through the second interface, and executing at least one function according to the control signal. A first interface is stored in the display device. The first interface and the second interface are different. At least one first function is supported by the display device. At least one second function is supported by the hardware dongle. The at least one first function and the at least one second function are integrated for generating the second interface by the display device after the data link is established.
    Type: Application
    Filed: May 13, 2020
    Publication date: November 19, 2020
    Inventors: Chen-Cheng Huang, Chang-Sheng Lee
  • Publication number: 20200270482
    Abstract: Articles having a thermal imprinted adhesive on a substrate of a plurality of certain conicals have improved bonding strength.
    Type: Application
    Filed: May 14, 2020
    Publication date: August 27, 2020
    Inventors: Fung Ling Yap, Chang Sheng Lee, Siew Ling Chong, Zhan Cheng
  • Publication number: 20200267358
    Abstract: A method for controlling projectors includes identifying a first projector and a second projector by using a database, acquiring a first control code of the first projector and a second control code of the second projector after the first projector and the second projector are identified, and generating at least one control signal to the first projector and the second projector for controlling operational actions of the first projector and the second projector according to the first control code and the second control code.
    Type: Application
    Filed: February 19, 2020
    Publication date: August 20, 2020
    Inventors: Chih-Pen Huang, Chang-Sheng Lee, Tung-Chia Chou
  • Patent number: 10748806
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Publication number: 20200105908
    Abstract: A method includes providing a structure having a substrate and a fin protruding from the substrate; forming a dummy gate stack over the fin; forming a gate spacer on sidewalls of the dummy gate stack; removing the dummy gate stack using a radical etch process, resulting in a gate trench; and forming a metal gate stack in the gate trench.
    Type: Application
    Filed: September 17, 2019
    Publication date: April 2, 2020
    Inventors: Wei-Yu Tsai, Fu-Yao Nien, Tony Huang, Chang-Sheng Lee
  • Publication number: 20190139810
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: December 21, 2018
    Publication date: May 9, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Wei-Jen CHEN, Yi-Chen CHIANG, Tsang-Yang LIU, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Publication number: 20190091827
    Abstract: A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 28, 2019
    Inventors: Chung-Liang CHENG, Chang-Sheng LEE, Wei ZHANG, Yen-Yu CHEN
  • Patent number: 10166650
    Abstract: A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: January 1, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chung-Liang Cheng, Yen-Yu Chen, Chang-Sheng Lee, Wei Zhang
  • Patent number: 10163676
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Patent number: 10113228
    Abstract: The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: October 30, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chung-Liang Cheng, Sheng-Wei Yeh, Chia-Hsi Wang, Wei-Jen Chen, Yen-Yu Chen, Chang-Sheng Lee, Wei Zhang
  • Publication number: 20180059291
    Abstract: The present invention provides a textured polymer substrate comprising nano-sized surface features that are arranged in a single array or in a hierarchical array, and at least one layer of an amorphous, hydrophilic layer deposited thereon. The disclosed textured polymer substrate is advantageously suited for providing anti-reflective, anti-fogging and anti-UV materials.
    Type: Application
    Filed: March 7, 2016
    Publication date: March 1, 2018
    Inventors: Xue LI, Ren Bin YANG, Mohamed Sultan Mohiddin SAIFULLAH, Siew Ling Karen CHONG, Chang Sheng LEE, Yee Chong LOKE, Ai Yu HE
  • Patent number: 9803274
    Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.
    Type: Grant
    Filed: November 14, 2013
    Date of Patent: October 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Wei Bih, Wei-Jen Chen, Yen-Yu Chen, Hsien-Chieh Hsiao, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang