Patents by Inventor Chang Shuk Kim
Chang Shuk Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8174879Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: October 26, 2009Date of Patent: May 8, 2012Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Publication number: 20100103720Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR to (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: ApplicationFiled: October 26, 2009Publication date: April 29, 2010Applicant: Hynix Semiconductor Inc.Inventors: Hee Bok KANG, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 7609547Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: December 21, 2007Date of Patent: October 27, 2009Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 7333361Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: February 21, 2006Date of Patent: February 19, 2008Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 7031186Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: August 29, 2003Date of Patent: April 18, 2006Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 6914003Abstract: A method for manufacturing a magnetic random access memory is disclosed. An interlayer insulating film is formed on a lower read layer, a cell region of the interlayer insulating film is etched according to a photo etching process using a cell mask, and a MTJ layer is formed on the lower read layer of the cell region and the interlayer insulating film of a peripheral circuit region. The sidewall of the interlayer insulating film is exposed, the MTJ layer is left merely in the cell region by lifting off the interlayer insulating film, and a bit line which is an upper read layer connected to the MTJ layer is formed in a succeeding process. Accordingly, an effective area of an MTJ cell is obtained and the properties and reliability of the MRAM are improved.Type: GrantFiled: December 31, 2002Date of Patent: July 5, 2005Assignee: Hynix Semiconductor Inc.Inventors: Kye Nam Lee, Young Jin Park, Chang Shuk Kim, In Woo Jang, Hee Kyung
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Patent number: 6909129Abstract: A magnetic random access memory includes a plurality of multi-layered memory structures that are formed within a single memory unit and connected in one of a series and a parallel configuration. Each of the plurality of multi-layered memory structures has a resistance that varies based on a magnetization direction of a ferromagnetic layer. A transistor is operatively coupled to each of the plurality of multi-layered memory structures to perform one of a memory read and a memory write operation based on a conduction state of the transistor.Type: GrantFiled: November 4, 2002Date of Patent: June 21, 2005Assignee: Hynix Semiconductor Inc.Inventors: Chang Shuk Kim, Hyeok Je Jeong
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Patent number: 6839274Abstract: A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.Type: GrantFiled: December 30, 2002Date of Patent: January 4, 2005Assignee: Hynix Semiconductor Inc.Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim, Hee Kyung
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Patent number: 6788570Abstract: Magnetic random access memories (MRAM) are disclosed. The MRAM stores multi-level data by electronically coupling one diode and a plurality of resistance transfer devices, thereby improving a storage capacity and property of the device and achieving high integration thereof. The MRAM may also include a diode, a word line electrically coupled to the diode, a connection layer electrically coupled to the diode; and a plurality of connection pairs each comprising a resistance transfer device and a bit line electrically coupled to the resistance transfer device. One of the connection pairs may be formed on the connection layer, and the bit line of another connection pair may be perpendicular to the bit line of the first connection pair.Type: GrantFiled: October 22, 2002Date of Patent: September 7, 2004Assignee: Hynix Semiconductor Inc.Inventors: Chang Shuk Kim, Kye Nam Lee, In Woo Jang, Kyoung Sik Im
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Patent number: 6768670Abstract: A writing method for a magnetic random access memory (MRAM) using a bipolar junction transistor is disclosed. The writing method is for use with the MRAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method for the MRAM using the bipolar junction transistor writes data by applying current from the emitter to the collector, and changing a magnetization direction of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current.Type: GrantFiled: December 11, 2002Date of Patent: July 27, 2004Assignee: Hynix Semiconductor Inc.Inventors: Chang Shuk Kim, Hee Bok Kang, Christine H. Kyung, In Woo Jang
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Publication number: 20040120185Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: ApplicationFiled: August 29, 2003Publication date: June 24, 2004Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 6750540Abstract: A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the Schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.Type: GrantFiled: December 16, 2002Date of Patent: June 15, 2004Assignee: Hynix Semiconductor Inc.Inventor: Chang Shuk Kim
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Patent number: 6707085Abstract: A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.Type: GrantFiled: December 30, 2002Date of Patent: March 16, 2004Assignee: Hynix Semiconductor IncInventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim
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Patent number: 6664579Abstract: A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.Type: GrantFiled: May 6, 2002Date of Patent: December 16, 2003Assignee: Hynix Semiconductor Inc.Inventors: Chang Shuk Kim, Hee Bok Kang, Sun Ghil Lee
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Publication number: 20030224608Abstract: A method for manufacturing a magnetic random access memory is disclosed. An interlayer insulating film is formed on a lower read layer, a cell region of the interlayer insulating film is etched according to a photo etching process using a cell mask, and a MTJ layer is formed on the lower read layer of the cell region and the interlayer insulating film of a peripheral circuit region. The sidewall of the interlayer insulating film is exposed, the MTJ layer is left merely in the cell region by lifting off the interlayer insulating film, and a bit line which is an upper read layer connected to the MTJ layer is formed in a succeeding process. Accordingly, an effective area of an MTJ cell is obtained and the properties and reliability of the MRAM are improved.Type: ApplicationFiled: December 31, 2002Publication date: December 4, 2003Inventors: Kye Nam Lee, Young Jin Park, Chang Shuk Kim, In Woo Jang, Hee Kyung
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Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
Patent number: 6657270Abstract: A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semiconductor substrate; an MTJ cell positioned at the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; and a word line provided on the MTJ cell. The MRAM may also include a bit line contacting the collector; and a reference voltage line contacting the emitter. As a result, the constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.Type: GrantFiled: April 22, 2002Date of Patent: December 2, 2003Assignee: Hynix Semiconductor Inc.Inventors: Chang Shuk Kim, Hee Bok Kang, Sun Ghil Lee -
Publication number: 20030218197Abstract: A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.Type: ApplicationFiled: December 30, 2002Publication date: November 27, 2003Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim
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Publication number: 20030214839Abstract: A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.Type: ApplicationFiled: December 30, 2002Publication date: November 20, 2003Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim, Hee Kyung
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Publication number: 20030116847Abstract: A magnetic random access memory (MRAM) using a schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.Type: ApplicationFiled: December 16, 2002Publication date: June 26, 2003Inventor: Chang Shuk Kim
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Publication number: 20030117835Abstract: A magnetic random access memory includes a plurality of multi-layered memory structures that are formed within a single memory unit and connected in one of a series and a parallel configuration. Each of the plurality of multi-layered memory structures has a resistance that varies based on a magnetization direction of a ferromagnetic layer. A transistor is operatively coupled to each of the plurality of multi-layered memory structures to perform one of a memory read and a memory write operation based on a conduction state of the transistor.Type: ApplicationFiled: November 4, 2002Publication date: June 26, 2003Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Chang Shuk Kim, Hyeok Je Jeong