Patents by Inventor Chang Shuk Kim

Chang Shuk Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8174879
    Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: May 8, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
  • Publication number: 20100103720
    Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR to (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).
    Type: Application
    Filed: October 26, 2009
    Publication date: April 29, 2010
    Applicant: Hynix Semiconductor Inc.
    Inventors: Hee Bok KANG, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
  • Patent number: 7609547
    Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: October 27, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
  • Patent number: 7333361
    Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).
    Type: Grant
    Filed: February 21, 2006
    Date of Patent: February 19, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
  • Patent number: 7031186
    Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: April 18, 2006
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
  • Patent number: 6914003
    Abstract: A method for manufacturing a magnetic random access memory is disclosed. An interlayer insulating film is formed on a lower read layer, a cell region of the interlayer insulating film is etched according to a photo etching process using a cell mask, and a MTJ layer is formed on the lower read layer of the cell region and the interlayer insulating film of a peripheral circuit region. The sidewall of the interlayer insulating film is exposed, the MTJ layer is left merely in the cell region by lifting off the interlayer insulating film, and a bit line which is an upper read layer connected to the MTJ layer is formed in a succeeding process. Accordingly, an effective area of an MTJ cell is obtained and the properties and reliability of the MRAM are improved.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: July 5, 2005
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kye Nam Lee, Young Jin Park, Chang Shuk Kim, In Woo Jang, Hee Kyung
  • Patent number: 6909129
    Abstract: A magnetic random access memory includes a plurality of multi-layered memory structures that are formed within a single memory unit and connected in one of a series and a parallel configuration. Each of the plurality of multi-layered memory structures has a resistance that varies based on a magnetization direction of a ferromagnetic layer. A transistor is operatively coupled to each of the plurality of multi-layered memory structures to perform one of a memory read and a memory write operation based on a conduction state of the transistor.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: June 21, 2005
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chang Shuk Kim, Hyeok Je Jeong
  • Patent number: 6839274
    Abstract: A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: January 4, 2005
    Assignee: Hynix Semiconductor Inc.
    Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim, Hee Kyung
  • Patent number: 6788570
    Abstract: Magnetic random access memories (MRAM) are disclosed. The MRAM stores multi-level data by electronically coupling one diode and a plurality of resistance transfer devices, thereby improving a storage capacity and property of the device and achieving high integration thereof. The MRAM may also include a diode, a word line electrically coupled to the diode, a connection layer electrically coupled to the diode; and a plurality of connection pairs each comprising a resistance transfer device and a bit line electrically coupled to the resistance transfer device. One of the connection pairs may be formed on the connection layer, and the bit line of another connection pair may be perpendicular to the bit line of the first connection pair.
    Type: Grant
    Filed: October 22, 2002
    Date of Patent: September 7, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chang Shuk Kim, Kye Nam Lee, In Woo Jang, Kyoung Sik Im
  • Patent number: 6768670
    Abstract: A writing method for a magnetic random access memory (MRAM) using a bipolar junction transistor is disclosed. The writing method is for use with the MRAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method for the MRAM using the bipolar junction transistor writes data by applying current from the emitter to the collector, and changing a magnetization direction of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current.
    Type: Grant
    Filed: December 11, 2002
    Date of Patent: July 27, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chang Shuk Kim, Hee Bok Kang, Christine H. Kyung, In Woo Jang
  • Publication number: 20040120185
    Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).
    Type: Application
    Filed: August 29, 2003
    Publication date: June 24, 2004
    Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
  • Patent number: 6750540
    Abstract: A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the Schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: June 15, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventor: Chang Shuk Kim
  • Patent number: 6707085
    Abstract: A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: March 16, 2004
    Assignee: Hynix Semiconductor Inc
    Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim
  • Patent number: 6664579
    Abstract: A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.
    Type: Grant
    Filed: May 6, 2002
    Date of Patent: December 16, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chang Shuk Kim, Hee Bok Kang, Sun Ghil Lee
  • Publication number: 20030224608
    Abstract: A method for manufacturing a magnetic random access memory is disclosed. An interlayer insulating film is formed on a lower read layer, a cell region of the interlayer insulating film is etched according to a photo etching process using a cell mask, and a MTJ layer is formed on the lower read layer of the cell region and the interlayer insulating film of a peripheral circuit region. The sidewall of the interlayer insulating film is exposed, the MTJ layer is left merely in the cell region by lifting off the interlayer insulating film, and a bit line which is an upper read layer connected to the MTJ layer is formed in a succeeding process. Accordingly, an effective area of an MTJ cell is obtained and the properties and reliability of the MRAM are improved.
    Type: Application
    Filed: December 31, 2002
    Publication date: December 4, 2003
    Inventors: Kye Nam Lee, Young Jin Park, Chang Shuk Kim, In Woo Jang, Hee Kyung
  • Patent number: 6657270
    Abstract: A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semiconductor substrate; an MTJ cell positioned at the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; and a word line provided on the MTJ cell. The MRAM may also include a bit line contacting the collector; and a reference voltage line contacting the emitter. As a result, the constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.
    Type: Grant
    Filed: April 22, 2002
    Date of Patent: December 2, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chang Shuk Kim, Hee Bok Kang, Sun Ghil Lee
  • Publication number: 20030218197
    Abstract: A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.
    Type: Application
    Filed: December 30, 2002
    Publication date: November 27, 2003
    Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim
  • Publication number: 20030214839
    Abstract: A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.
    Type: Application
    Filed: December 30, 2002
    Publication date: November 20, 2003
    Inventors: In Woo Jang, Young Jin Park, Kye Nam Lee, Chang Shuk Kim, Hee Kyung
  • Publication number: 20030117836
    Abstract: A writing method for a magnetic random access memory (MRAM) using a bipolar junction transistor is disclosed. The writing method is for use with the MRAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method for the MRAM using the bipolar junction transistor writes data by applying current from the emitter to the collector, and changing a magnetization direction of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current.
    Type: Application
    Filed: December 11, 2002
    Publication date: June 26, 2003
    Inventors: Chang Shuk Kim, Hee Bok Kang, Christine H. Kyung, In Woo Jang
  • Publication number: 20030116847
    Abstract: A magnetic random access memory (MRAM) using a schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.
    Type: Application
    Filed: December 16, 2002
    Publication date: June 26, 2003
    Inventor: Chang Shuk Kim