Abstract: In at least one general aspect, an apparatus can include a first field effect transistor (FET) device and a second FET device. The apparatus can include a characterization circuit coupled to the first FET device and the second FET device where the characterization circuit can be configured to characterize a responsiveness of each of the first FET device and the second FET device. The apparatus can include a balancer configured to produce a modified gate drive signal for the first FET device based on the responsiveness of the first FET device.

Abstract: In at least one general aspect, an apparatus can include a first field effect transistor (FET) device and a second FET device. The apparatus can include a characterization circuit coupled to the first FET device and the second FET device where the characterization circuit can be configured to characterize a responsiveness of each of the first FET device and the second FET device. The apparatus can include a balancer configured to produce a modified gate drive signal for the first FET device based on the responsiveness of the first FET device.

Abstract: A power system comprising a front end regulator coupled to an input supply voltage (Vin) and providing a regulated input supply voltage (Vbp). The front end regulator compares the input supply voltage (Vin) and the regulated input supply voltage (Vbp) and maintains a substantially constant voltage difference between the input supply voltage (Vin) and the regulated input supply voltage (Vbp) to thereby reduce ripple of the input supply voltage (Vin). A DC-DC switching mode power converter is operatively coupled to the front end regulator and receives the regulated input supply voltage (Vbp). The DC-DC switching mode power converter thereby provides a regulated output voltage (Vout).

Abstract: A semiconductor device (10) is formed that is bi-lateral and has a voltage blocking capability that is well suited to applications involving portable electronics. The semiconductor device has an epitaxial layer (14) that is formed on a semiconductor substrate (11). A doped region (24) is formed that extends from a top surface (16) of the epitaxial layer (14) to the underlying semiconductor substrate (11). The semiconductor device (10) has a source region (31) that is separated from the doped region (24) to provide a channel region (29). The channel region (29) is modulated by a gate structure (20) to determine if a current flow should be allowed through semiconductor device (10) or if semiconductor device (10) is to provide voltage blocking capability.

Abstract: A protection element (10) protects a battery pack (36) from potential faulty conditions in a load (38). The protection element (10) includes a switch (12), a control FET (14), and three resistors (16, 18, and 22). Under normal operating conditions, the switch (12) is conductive and the control FET (14) is non-conductive. If a short circuit is detected, the controller (14) becomes conductive and turns off the switch (12). The switch (12) remains non-conductive until the load (38) is disconnected from the protection element (10). The protection element (10) further includes a temperature sensor (24) that turns off the switch (12) at high temperatures and a current limiting element (28) that imposes an upper limit on the current flowing through the protection element (10). Control signals can be applied to the gate electrodes of the switch (12) and the control FET (14) to modulate the current in the protection element (10).