Abstract: A semiconductor package and a method of manufacturing a semiconductor package are provided. The semiconductor package includes a first substrate having electrodes are disposed on both surfaces thereof, one or more first elements mounted on a first surface of the first substrate, a first insulating member comprising an insulating material disposed on a first surface of the first substrate and affixing one or more first elements to the first surface of the first substrate, and one or more second elements mounted on a second surface of the first substrate. At least a portion of the first elements is externally exposed from the first insulating member.

Abstract: A high frequency (HF) module and a manufacturing method thereof. The HF module has a single airtight box-like structure formed by a first PCB, a second PCB, and a third PCB. On a lower surface of the third PCB facing the first PCB, a second electronic component is mounted at a position corresponding to a first electronic component relatively low in height, among first electronic components mounted on the first PCB. Upper and lower ends of a plurality of vias formed within the second PCB are connected to a copper layer existing within a body of the third PCB and a copper layer existing within a body of the first PCB to constitute a single electromagnetic wave shielding unit overall.

Abstract: A semiconductor device having a trench type gate and a fabrication method therefor is provided. The semiconductor device includes a trench formed in a semiconductor substrate and a gate insulating layer formed on the inner walls of the trench. A gate fills the trench and is insulated from the semiconductor substrate by the gate insulating layer. A barrier layer is formed between the gate insulating layer and the gate for preventing migration of impurities from the gate to the gate insulating layer.