Abstract: Disclosed is an electronic device including a shielding member. The electronic device includes a substrate having an electric element mounted thereon; a shield can mounted on the electric element and including an opening formed at a part facing the electric element; a shielding member mounted around a part in which the opening is formed on an outer surface of the shield can, and electrically connected to the shield can; a metal plate mounted on the shielding member, with the opening covered, and electrically connected to the shielding member; and a heat conductive member mounted in the opening and interposed between the electric element and the metal plate, and in contact with the electric element and the metal plate.

Abstract: An electronic device according to an embodiment may comprise: a speaker, an amplifier connected to the speaker through a first electrical path; and at least one processor electrically connected to the amplifier, wherein the at least one processor is configured to: provide a first audio signal set to a first volume level to the speaker via the amplifier; when the first volume level is less than a predetermined first value, output the first audio signal at the first volume level through the speaker; and when the first volume level is equal to or greater than the first value, control a volume level of the first audio signal on the basis of a temperature value of the speaker, which is estimated from the first audio signal.

Abstract: An electronic device according to an embodiment may comprise: a speaker, an amplifier connected to the speaker through a first electrical path; and at least one processor electrically connected to the amplifier, wherein the at least one processor is configured to: provide a first audio signal set to a first volume level to the speaker via the amplifier; when the first volume level is less than a predetermined first value, output the first audio signal at the first volume level through the speaker; and when the first volume level is equal to or greater than the first value, control a volume level of the first audio signal on the basis of a temperature value of the speaker, which is estimated from the first audio signal.

Abstract: Disclosed is an electronic device including a shielding member. The electronic device includes a substrate having an electric element mounted thereon; a shield can mounted on the electric element and including an opening formed at a part facing the electric element; a shielding member mounted around a part in which the opening is formed on an outer surface of the shield can, and electrically connected to the shield can; a metal plate mounted on the shielding member, with the opening covered, and electrically connected to the shielding member; and a heat conductive member mounted in the opening and interposed between the electric element and the metal plate, and in contact with the electric element and the metal plate.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor device structure, comprising the steps of: securing the position of a semiconductor device on a plate; securing the positions of electrodes such that the electrodes face the plate; covering the semiconductor device with an encapsulating material; and separating, from the plate, the semiconductor device covered with the encapsulating material.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor device structure, comprising the steps of: securing the position of a semiconductor device on a plate; securing the positions of electrodes such that the electrodes face the plate; covering the semiconductor device with an encapsulating material; and separating, from the plate, the semiconductor device covered with the encapsulating material.

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality of III-nitride semiconductor layers including a first semiconductor layer formed over the first surface of the substrate, a second semiconductor layer formed over the first III-nitride semiconductor layer, and an active layer disposed between the first and second III-nitride semiconductor layers and generating light by recombination of electrons and holes, a first opening formed on the first groove, a second opening formed on the second groove, a first electrode electrically connected from the second surface to the first III-nitride semiconductor layer through the first groove, and a second electrode electrically connected from the second surface to the second III-nitride semiconductor layer through the second groove and the second opening.

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.

Abstract: The present disclosure relates to a semiconductor light-emitting device including: a plurality of semiconductor layers having a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of semiconductor layers; a first electrode spread over the plurality of semiconductor layers; and a second electrode extended from the bonding pad to the first electrode and electrically connecting the bonding pad to the first electrode.

Abstract: The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.

Abstract: The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.

Abstract: The present disclosure provides a dimming control method for a display having a light-emitting device which includes: a first light-emitting body including an active layer generating a first light by recombination of electrons and holes; and a second light-emitting body excited by the first light and emitting a second light having a longer wavelength than the first light, the dimming control method including: controlling the power which will be supplied to the light-emitting device according to a dimming request; and adjusting the brightness of the display according to the controlled power using the second light-emitting body containing a first fluorescent material having a characteristic that chromaticity coordinates are shifted in a first direction according to the power control and a second fluorescent material having a characteristic that chromaticity coordinates are shifted in a second direction opposite to the first direction according to the power control.

Abstract: The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

Abstract: The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode.

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers including a first nitride semiconductor layer formed over the substrate and having a first conductivity type, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer and generating light by recombination of electrons and holes, and an opening formed along the plurality of III-nitride semiconductor layers from the substrate, and including a first scattering surface scattering the light generated in the active layer and a second scattering surface having a different slope from that of the first scattering surface.

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a scattering zone formed therein, and a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.

Abstract: The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality of III-nitride semiconductor layers including a first semiconductor layer formed over the first surface of the substrate, a second semiconductor layer formed over the first III-nitride semiconductor layer, and an active layer disposed between the first and second III-nitride semiconductor layers and generating light by recombination of electrons and holes, a first opening formed on the first groove, a second opening formed on the second groove, a first electrode electrically connected from the second surface to the first III-nitride semiconductor layer through the first groove, and a second electrode electrically connected from the second surface to the second III-nitride semiconductor layer through the second groove and the second opening.

Abstract: The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.