Abstract: A manufacturing method of a semiconductor structure including the following steps is provided. A substrate is provided. A first dielectric layer is formed on the substrate. A first conductive layer is formed in the first dielectric layer. A capping layer is formed on the first dielectric layer and the first conductive layer. The material of the capping layer is nitride. A diffusion barrier layer covering the capping layer is formed. The material of the diffusion barrier layer is silicon-rich oxide (SRO). A second dielectric layer is formed on the diffusion barrier layer. An opening is formed in the second dielectric layer. The opening exposes the diffusion barrier layer. A patterned photoresist layer is formed on the second dielectric layer. A patterning process is performed by using the patterned photoresist layer as a mask to expand the opening and to expose the first conductive layer.

Abstract: A system and method for a large ship to immobilize malicious small watercraft comprises of an unmanned underwater vehicle. The vehicle can be launched immediately upon detection of the threat. When the watercraft comes close, preparing to start boarding attack, the vehicle either uses it's onboard propulsion or is towed with a cable to sneak up on the watercraft and deliver an immobilizing effect, such as a hard crash or a stalling entanglement, on the propulsion mechanism of the watercraft.

Abstract: Methods and apparatus for inkjet drop positioning are provided. A first method includes determining an intended deposition location of an ink drop on a substrate, depositing the ink drop on the substrate using an inkjet printing system, detecting a deposited location of the deposited ink drop on the substrate, comparing the deposited location to the intended location, determining a difference between the deposited location and the intended location, and compensating for the difference between the deposited location and the intended location by adjusting a parameter of an inkjet printing system. Numerous other aspects are provided.

Abstract: A wide range tunable filter is provided. A randomly polarized incoming beam is converted into two orthogonally polarized beams. A ½ wave plate and filter block turns these two beams into four beams. Two of the four beams have a single range of wavelengths and two beams have the remaining wavelengths. Each pair of beams is orthogonally polarized. A ½ wave plate and birefringent crystal positioned after the filter block combine the two beams having the single range of wavelengths and combines the two beams having the remaining wavelengths. The invention includes a thermal compensator to correct the angle of the filter with respect to the incident light.

Abstract: A wide range tunable filter is provided. A randomly polarized incoming beam is converted into two orthogonally polarized beams. A ½ wave plate and filter block turns these two beams into four beams. Two of the four beams have a single range of wavelengths and two beams have the remaining wavelengths. Each pair of beams is orthogonally polarized. A ½ wave plate and birefringent crystal positioned after the filter block combine the two beams having the single range of wavelengths and combines the two beams having the remaining wavelengths. The invention includes a thermal compensator to correct the angle of the filter with respect to the incident light.