Patents by Inventor Chang Wan CHOI

Chang Wan CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240086603
    Abstract: A method of reinforcement learning of a neural network device for generating a verification vector for verifying a circuit design comprising a circuit block includes inputting a test vector to the circuit block, generating one or more rewards based on a coverage corresponding to the test vector, the coverage being determined based on a state transition of the circuit block based on the test vector, and applying the one or more rewards to a reinforcement learning.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 14, 2024
    Applicant: SAMSUNG ELECTRONICS CO, LTD.
    Inventors: In HUH, Jeong-hoon KO, Hyo-jin CHOI, Seung-ju KIM, Chang-wook JEONG, Joon-wan CHAI, Kwang-II PARK, Youn-sik PARK, Hyun-sun PARK, Young-min OH, Jun-haeng LEE, Tae-ho LEE
  • Patent number: 11515333
    Abstract: Disclosed are: a three-dimensional flash memory in which the degree of integration in a horizontal direction is improved so as to promote integration; and a manufacturing method therefor. A three-dimensional flash memory according to one embodiment comprises: at least one channel layer extending in one direction; at least one ferroelectric film used as a data storage place while being extended in the one direction so as to encompass the at least one channel layer; and a plurality of electrode layers stacked so as to be vertically connected to the at least one ferroelectric film.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: November 29, 2022
    Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Yun Heub Song, Chang Wan Choi, Jae Kyeong Jeong
  • Publication number: 20220130863
    Abstract: Disclosed are: a three-dimensional flash memory in which the degree of integration in a horizontal direction is improved so as to promote integration; and a manufacturing method therefor. A three-dimensional flash memory according to one embodiment comprises: at least one channel layer extending in one direction; at least one ferroelectric film used as a data storage place while being extended in the one direction so as to encompass the at least one channel layer; and a plurality of electrode layers stacked so as to be vertically connected to the at least one ferroelectric film.
    Type: Application
    Filed: December 26, 2019
    Publication date: April 28, 2022
    Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Yun Heub SONG, Chang Wan CHOI, Jae Kyeong JEONG