Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: The present application discloses a double-layer stacked CMOS image sensor, photo diode and transfer gate transistor of a pixel cell are formed on the first substrate sequentially along a longitudinal direction, and the other pixel transistors of the pixel cell are formed on the second substrate. The first substrate and the second substrate are packaged separately, and the second substrate is stacked on the top side of the first substrate instead of being in juxtaposition. Since the photo diode and the pixel transistors other than the transfer gate transistor of the pixel cell are located on two separate substrates respectively, the area of a photo diode region may be increased significantly, thereby greatly increasing full well capacitance of the image sensor and increasing a dynamic range, and reduce a dark current and image noise significantly, thereby improving the dark line noise and full well capacitance simultaneously.

Abstract: An atomization module includes a main fixing member, an auxiliary fixing member, an atomization component and a piezoelectric component. The main fixing member includes a first bonding part, a second bonding part and a connecting part. The first bonding part has a first opening and a first bonding surface surrounding the first opening. The second bonding part is connected to the first bonding part, and the connecting part and the second bonding part surround the first bonding part. The auxiliary fixing member has a second opening and a second bonding surface surrounding the second opening. The piezoelectric component surrounds the first bonding part. The main fixing member has a first adhesive groove, which is jointly defined at least by the main fixing member, the auxiliary fixing member and the atomization component. The first adhesive is provided in the first adhesive groove.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

Abstract: Various embodiments of the teachings herein include an image processing system comprising: a video stream processing device configured to receive a video stream, segment the video stream into multiple frames of pictures arranged in chronological order, and distribute the multiple frames of pictures to edge computing devices in a connected edge computing device group; and a picture collecting device configured to receive pictures from the edge computing device group. The individual edge computing devices in the edge computing device group are each configured to subject the received pictures to target identification, and send the pictures marked with a region in which an identified target is located. The picture collecting device is further configured to restore in chronological order as a video stream the received pictures marked with target identification results.

Abstract: A development system and a method of an offline software-in-the-loop simulation are disclosed. A common firmware architecture generates a chip control program. The common firmware architecture has an application layer and a hardware abstraction layer. The application layer has a configuration header file and a product program. A processing program required by a peripheral module is added to the hardware abstraction layer during compiling. The chip control program is provided to a controller chip or a circuit simulation software to be executed to control the product-related circuit through controlling the peripheral module.

Abstract: A light source assembly includes a first annular reflector, a second annular reflector and a plurality of first light source modules. The first annular reflector has a first reflective surface. The second annular reflector is coaxial with the first annular reflector. A radius of the first annular reflector is greater than that of the second annular reflector. The second annular reflector has a second reflective surface facing the first reflective surface. The first light source modules take a central axis of the first annular reflector as a center and annularly arranged around the center. The first light source modules provide first beams to the first reflective surface, which reflects the first beams to the second reflective surface. The second reflective surface reflects the first beams and makes the first beams emit along a direction parallel to a central axis of the second annular reflector. A projection device is also provided.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: A processor device has a CPU cooperating with an input device and an output device, under control of stored instructions, and is arranged to receive service requests at the input device, assign service requests received in successive time periods to respective batches of requests; access stored service provider data to identify available service providers from among a pool of service providers; after completing the assignment of service requests to a batch, perform a matching process to endeavour to match each service request of the batch of requests to a service provider; and for each service provider to whom a match is made, output a notification of the respective potential match from the output device.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: This disclosure relates to techniques for determining a dissociation constant of a reservoir that includes methane hydrate and generating a methane hydrate production output that may be used to inform certain decisions related to processing a reservoir that includes the methane hydrate. In some embodiments, the techniques may include determining the dissociation constant using multiple pressures measured at different flowrates at time points from within a wellbore.

Abstract: The present invention relates to a coating composition including polysilazane mixed in a suitable solvent, and nanoparticles dispersed therein, a method of forming the coating composition, a method of forming the coating and a coating.

Abstract: A semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal made of a first compound M1C1, a core layer, and a barrier layer grown in such order. The seed crystal has first regions that are inactive with oxygen, and second regions that are easily reactive with oxygen. The core layer is made of the first compound M1C1, and has first and second areas. Each of the first areas is positioned on a corresponding one of the first regions. Each of the second areas is positioned on a corresponding one of the second regions. Each of the first areas has a thickness greater than that of each of the second areas. The barrier layer is made of a second compound selected from M1X1 and X2C1. The shell is grown on the barrier layer, and is made of a third compound M2C2.

Abstract: A conductive terminal and an electrical connector having the same are provided. The conductive terminal includes a base portion, an elastic arm formed by extending upward from an upper end of the base portion, and a conductive portion located below the base portion. The elastic arm includes a contact arm and a first arm and a second arm provided at an interval in a left-right direction. The first arm and the second arm are both located between the contact arm and the base portion. The contact arm has a contact portion. A maximum width of the second arm in the left-right direction is greater than a maximum width of the first arm in the left-right direction. A central line of the contact portion and a connecting location of the second arm and the base portion are located at left and right sides of a central line of the base portion.

Abstract: A quantum dot includes a nanocrystalline core and a nanocrystalline shell. The nanocrystalline core includes a core body and a doping material that is non-uniformly doped in the core body. The core body has a sphalerite-type crystal structure, and includes at least one element from Group IB, at least one element from Group IIIA and at least one element from Group VIA. The doping material includes at least one doping element selected from the group consisting of an element from Group IB, an element from Group IIB and an element from Group IIIA. The nanocrystalline shell surrounds the nanocrystalline core and includes at least one element from Group VIA, and at least one element from one of Group IIB and Group IIIA. A method for preparing the quantum dot is also disclosed.

Abstract: In some examples, an antenna assembly includes a driven antenna element to communicate a signal over an antenna feed line, and a printed circuit including an electrically conductive pattern that is placed adjacent the driven antenna element. The printed circuit including the electrically conductive pattern provides a parasitic antenna element for the driven antenna element.