Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: A quantum dot structure includes a core and an inner shell. The core is a single crystal of a compound M1C1, and has a core surface having a first region and a second region. The first region has a crystal plane that is inactive with oxygen, and the second region has a crystal plane that is easily reactive with oxygen. The inner shell is a single crystal of a compound M2C2, and is formed on the first region of the core surface. A method for making the quantum dot structure is also disclosed.

Abstract: A quantum dot structure includes a core and an inner shell. The core is a single crystal of a compound M1C1, and has a core surface having a first region and a second region. The first region has a crystal plane that is inactive with oxygen, and the second region has a crystal plane that is easily reactive with oxygen. The inner shell is a single crystal of a compound M2C2, and is formed on the first region of the core surface. A method for making the quantum dot structure is also disclosed.

Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.

Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.

Abstract: The present invention mainly provides a non-contact reactor consisting of a reaction vessel having a particularly-designed size, a plurality of injection modules, an agitator, a heat exchange module, and an electrical gate valve module. Operators can inject at least one precursor solution into the reaction nanometer-scale semiconductor crystallites vessel and make the injected precursor solution reach a specific position in the reaction vessel by using the electrical gate valve to control the injection pressure of the injection modules. Moreover, the operators can further control the rotation speed of the agitator through a controller, so as to evenly and quickly mix the injected precursor solution and a specific solution pre-filled into the reaction vessel to a mixture solution; therefore, the acceleration of production rate and the enhance of production yield of the semiconductor nanocrystals are carried out.

Abstract: The present invention mainly provides a non-contact reactor consisting of: a reaction vessel having a particularly-designed size, a plurality of injection modules, an agitator, a heat exchange module, and an electrical gate valve module. When this non-contact reactor is operated to produce, operators are able to inject at least one precursor solution into the reaction nanometer-scale semiconductor crystallites vessel and make the injected precursor solution reach a specific position in the reaction vessel by using the electrical gate valve to control the injection pressure of the injection modules. Moreover, the operators can further properly control the rotation speed of the agitator through a controller, so as to evenly and quickly mix the injected precursor solution and a specific solution pre-filled into the reaction vessel to a mixture solution; therefore, the acceleration of production rate and the enhance of production yield of the semiconductor nanocrystals are carried out.

Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.

Abstract: The present invention provides a method for providing 3D stereo image. The method comprises: accepting a request submitted from a client system by an intermediate server system; selecting an image server based on the request and responding to the client system from the image server through a processor in the intermediate server system; requesting at least one 3D stereo image by the client system from the image server according to the response; and providing the at least one 3D stereo image to the client system by the image server system. The present invention also provides a system for providing 3D stereo image.

Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.

Abstract: The present invention provides a method for providing 3D stereo image. The method comprises: accepting a request submitted from a client system by an intermediate server system; selecting an image server based on the request and responding to the client system from the image server through a processor in the intermediate server system; requesting at least one 3D stereo image by the client system from the image server according to the response; and providing the at least one 3D stereo image to the client system by the image server system. The present invention also provides a system for providing 3D stereo image.