Abstract: The invention provides a layout pattern of static random access memory, which comprises a plurality of fin structures on a substrate, a plurality of gate structures on the substrate and spanning the fin structures to form a plurality of transistors distributed on the substrate. The transistors include a first pull-up transistor (PU1), a first pull-down transistor (PD1), a second pull-up transistor (PU2) and a second pull-down transistor (PD2), a first access transistor (PG1), a second access transistor (PG2), a first read port transistor (RPD) and a second read port transistor (RPG). The gate structure of the first read port transistor (RPD) is connected to the gate structure of the first pull-down transistor (PD1), wherein a drain of the first pull-down transistor (PD1) is connected to a first voltage source Vss1, and a drain of the first read port transistor (RPD) is connected to a second voltage source Vss2.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: A semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal made of a first compound M1C1, a core layer, and a barrier layer grown in such order. The seed crystal has first regions that are inactive with oxygen, and second regions that are easily reactive with oxygen. The core layer is made of the first compound M1C1, and has first and second areas. Each of the first areas is positioned on a corresponding one of the first regions. Each of the second areas is positioned on a corresponding one of the second regions. Each of the first areas has a thickness greater than that of each of the second areas. The barrier layer is made of a second compound selected from M1X1 and X2C1. The shell is grown on the barrier layer, and is made of a third compound M2C2.

Abstract: A quantum dot includes a nanocrystalline core and a nanocrystalline shell. The nanocrystalline core includes a core body and a doping material that is non-uniformly doped in the core body. The core body has a sphalerite-type crystal structure, and includes at least one element from Group IB, at least one element from Group IIIA and at least one element from Group VIA. The doping material includes at least one doping element selected from the group consisting of an element from Group IB, an element from Group IIB and an element from Group IIIA. The nanocrystalline shell surrounds the nanocrystalline core and includes at least one element from Group VIA, and at least one element from one of Group IIB and Group IIIA. A method for preparing the quantum dot is also disclosed.

Abstract: A quantum dot structure includes a core and an inner shell. The core is a single crystal of a compound M1C1, and has a core surface having a first region and a second region. The first region has a crystal plane that is inactive with oxygen, and the second region has a crystal plane that is easily reactive with oxygen. The inner shell is a single crystal of a compound M2C2, and is formed on the first region of the core surface. A method for making the quantum dot structure is also disclosed.

Abstract: A quantum dot structure includes a core and an inner shell. The core is a single crystal of a compound M1C1, and has a core surface having a first region and a second region. The first region has a crystal plane that is inactive with oxygen, and the second region has a crystal plane that is easily reactive with oxygen. The inner shell is a single crystal of a compound M2C2, and is formed on the first region of the core surface. A method for making the quantum dot structure is also disclosed.

Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.

Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.

Abstract: The present invention mainly provides a non-contact reactor consisting of a reaction vessel having a particularly-designed size, a plurality of injection modules, an agitator, a heat exchange module, and an electrical gate valve module. Operators can inject at least one precursor solution into the reaction nanometer-scale semiconductor crystallites vessel and make the injected precursor solution reach a specific position in the reaction vessel by using the electrical gate valve to control the injection pressure of the injection modules. Moreover, the operators can further control the rotation speed of the agitator through a controller, so as to evenly and quickly mix the injected precursor solution and a specific solution pre-filled into the reaction vessel to a mixture solution; therefore, the acceleration of production rate and the enhance of production yield of the semiconductor nanocrystals are carried out.

Abstract: The present invention mainly provides a non-contact reactor consisting of: a reaction vessel having a particularly-designed size, a plurality of injection modules, an agitator, a heat exchange module, and an electrical gate valve module. When this non-contact reactor is operated to produce, operators are able to inject at least one precursor solution into the reaction nanometer-scale semiconductor crystallites vessel and make the injected precursor solution reach a specific position in the reaction vessel by using the electrical gate valve to control the injection pressure of the injection modules. Moreover, the operators can further properly control the rotation speed of the agitator through a controller, so as to evenly and quickly mix the injected precursor solution and a specific solution pre-filled into the reaction vessel to a mixture solution; therefore, the acceleration of production rate and the enhance of production yield of the semiconductor nanocrystals are carried out.

Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.

Abstract: The present invention provides a method for providing 3D stereo image. The method comprises: accepting a request submitted from a client system by an intermediate server system; selecting an image server based on the request and responding to the client system from the image server through a processor in the intermediate server system; requesting at least one 3D stereo image by the client system from the image server according to the response; and providing the at least one 3D stereo image to the client system by the image server system. The present invention also provides a system for providing 3D stereo image.

Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.

Abstract: The present invention provides a method for providing 3D stereo image. The method comprises: accepting a request submitted from a client system by an intermediate server system; selecting an image server based on the request and responding to the client system from the image server through a processor in the intermediate server system; requesting at least one 3D stereo image by the client system from the image server according to the response; and providing the at least one 3D stereo image to the client system by the image server system. The present invention also provides a system for providing 3D stereo image.