Abstract: A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.

Abstract: An anti-lock braking control device includes a housing which defines cylindrical first chamber, two second chambers and a third chamber. The housing has two which are inlet ports connected to two master cylinders and two outlets ports which are connected to rear and front brakes. The third chamber is communicated with the inlet ports and is connected to two second chambers by two oil passages. The second chambers are aligned with one another and are connected to the first chamber. A rotor shaft with a driving disk is mounted rotatably in the first chamber. An oil regulator assembly is mounted in the third chamber for controlling the flow rate of hydraulic oil from the master cylinders to the second chambers. Each of a pair of reciprocating pump assemblies has a rod member which is driven by the driving disk to move reciprocally in a respective one of the second chambers.