Patents by Inventor Chang-Won Choi
Chang-Won Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6858235Abstract: The present invention relates to an antioxidant composition and a method of preparation thereof. In detail, the present invention relates to an antioxidant composition containing procyanidin B3 obtained from Rosa multiflora, and a preparation method for the antioxidant composition, comprising extraction of the underground part of Rosa multiflora with an organic solvent, followed by fractionation and purification of the extract by chromatography. The antioxidant composition of the present invention can be effectively used in treatment or prevention of various diseases due to oxidation by reactive oxygen species, maintenance of quality of food, and prevention of skin damages due to oxidation.Type: GrantFiled: November 7, 2002Date of Patent: February 22, 2005Assignee: Eromlife Co. Ltd.Inventors: Mi-Hyoun Park, Nam-In Baek, Jae-Taek Han, Chang-Won Choi
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Patent number: 6838719Abstract: Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode.Type: GrantFiled: August 20, 2002Date of Patent: January 4, 2005Assignee: Samsung Electronics Co. Ltd.Inventors: Ki-Hyun Hwang, Chang-Won Choi, Seok-Woo Nam, Bon-Young Koo, Young-Sub Yu, Han-Jin Lim
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Patent number: 6835276Abstract: An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.Type: GrantFiled: September 19, 2002Date of Patent: December 28, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Hyun Hwang, No-Hyun Huh, Chang-Won Choi, Byeung-Wook Choi, Doo-Won Lee
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Publication number: 20040238488Abstract: A wafer edge etching apparatus and method for etching an edge of a semiconductor wafer including a bottom electrode, arranged below the semiconductor wafer and acting as a stage to support the semiconductor wafer. A method of etching a semiconductor wafer including inserting a semiconductor wafer into a chamber, increasing a pressure in the chamber, supplying at least one etchant gas to the chamber while further increasing the pressure, supplying power to the chamber and etching the semiconductor wafer at the edge bead or the backside of the semiconductor wafer, discontinuing the power and the etchant gas, venting the chamber with a venting gas, and purging the venting gas from the chamber.Type: ApplicationFiled: January 23, 2004Publication date: December 2, 2004Inventors: Chang Won Choi, Jong Baum Kim, Tae Ryong Kim, Jung-Woo Seo, Chang Ju Byun
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Patent number: 6740550Abstract: A semiconductor device having a chamfered silicide layer and a manufacturing method of the same. The semiconductor device includes: a first insulation layer overlying a semiconductor substrate; gate structures including first conductive layer patterns formed on the first insulation layer, and second conductive layer patterns which are formed on the first conductive layer patterns, wherein the lower sides of the second conductive layer patterns are substantially perpendicular to the major surface of the semiconductor substrate and the upper sides of the second conductive layer patterns are chamfered; and a second insulation layer formed with a first width W on the second conductive layer patterns, wherein the sidewalls of the second insulation layer overhang the upper edges of the second conductive layer patterns.Type: GrantFiled: July 3, 2002Date of Patent: May 25, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-won Choi, Dae-hyuk Chung, Woo-sik Kim, Shin-woo Nam, Yeo-cheol Yoon, Bum-su Kim, Jong-ho Park, Ji-hwan Choi
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Publication number: 20040043056Abstract: The present invention relates to a diet composition comprising raw foods comprising the lyophilized powders of grains, vegetables and seaweeds; dietary fibers; and functional herbal extracts, etc. The composition according to the present invention is effective in reduction of weight and body fat and body shape management as well as abundant in nutrition ingredients. And also the composition has an excellent effect on decreasing cholesterol and neutral fat amounts in blood. Therefore, the composition according to the invention can be usefully employed as a food capable of preventing or improving obesity while assisting in ingesting nutriments, which are apt to be lacking in modern people, without omission.Type: ApplicationFiled: April 15, 2003Publication date: March 4, 2004Applicant: EROMLIFE CO., LTD.Inventors: Sang Ho Hwang, Hey Eun Chang, Chang Won Choi, Sung Bum Yang, Mi Hyoun Park
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Publication number: 20040028758Abstract: The present invention relates to an antioxidant composition and a method of preparation thereof. In detail, the present invention relates to an antioxidant composition containing procyanidin B3 obtained from Rosa multiflora, and a preparation method for the antioxidant composition, comprising extraction of the underground part of Rosa multiflora with an organic solvent, followed by fractionation and purification of the extract by chromatography. The antioxidant composition of the present invention can be effectively used in treatment or prevention of various diseases due to oxidation by reactive oxygen species, maintenance of quality of food, and prevention of skin damages due to oxidation.Type: ApplicationFiled: November 7, 2002Publication date: February 12, 2004Applicant: EROMLIFE CO., LTD.Inventors: Mi-Hyoun Park, Nam-In Baek, Jae-Taek Han, Chang-Won Choi
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Publication number: 20030057182Abstract: An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.Type: ApplicationFiled: September 19, 2002Publication date: March 27, 2003Inventors: Jung-Hyun Hwang, No-Hyun Huh, Chang-Won Choi, Byeung-Wook Choi, Doo-Won Lee
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Publication number: 20030019584Abstract: A chuck assembly of an etching apparatus capable of improving an etching rate at an edge portion of a wafer, thereby preventing byproducts from being formed along the edge portion of the wafer is disclosed. The chuck assembly comprises a chuck body comprising a stepped portion at an edge side portion of the chuck body for supporting a central portion of a wafer; an edge ring, received in the stepped portion of the chuck body, for supporting an edge portion of the wafer, wherein the edge ring has less resistance than the resistance of the wafer; and an insulating ring provided at a surrounding portion of the chuck body, for supporting a bottom portion of the edge ring, the bottom portion of the edge ring being extended toward outside of the chuck body.Type: ApplicationFiled: January 22, 2002Publication date: January 30, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Chang-Won Choi, Tae-Ryong Kim, Jaung-Joo Kim
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Publication number: 20020192924Abstract: Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode.Type: ApplicationFiled: August 20, 2002Publication date: December 19, 2002Inventors: Ki-Hyun Hwang, Chang-Won Choi, Seok-Woo Nam, Bon-Young Koo, Young-Sub Yu, Han-Jin Lim
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Publication number: 20020175381Abstract: A semiconductor device having a chamfered silicide layer and a manufacturing method of the same. The semiconductor device includes: a first insulation layer overlying a semiconductor substrate; gate structures including first conductive layer patterns formed on the first insulation layer, and second conductive layer patterns which are formed on the first conductive layer patterns, wherein the lower sides of the second conductive layer patterns are substantially perpendicular to the major surface of the semiconductor substrate and the upper sides of the second conductive layer patterns are chamfered; and a second insulation layer formed with a first width W on the second conductive layer patterns, wherein the sidewalls of the second insulation layer overhang the upper edges of the second conductive layer patterns.Type: ApplicationFiled: July 3, 2002Publication date: November 28, 2002Inventors: Chang-won Choi, Dae-hyuk Chung, Woo-sik Kim, Shin-woo Nam, Yeo-cheol Yoon, Bum-su Kim, Jong-ho Park, Ji-hwan Choi
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Patent number: 6437411Abstract: A semiconductor device having a chamfered silicide layer and a manufacturing method of the same. The semiconductor device includes: a first insulation layer overlying a semiconductor substrate; gate structures including first conductive layer patterns formed on the first insulation layer, and second conductive layer patterns which are formed on the first conductive layer patterns, wherein the lower sides of the second conductive layer patterns are substantially perpendicular to the major surface of the semiconductor substrate and the upper sides of the second conductive layer patterns are chamfered; and a second insulation layer formed with a first width W on the second conductive layer patterns, wherein the sidewalls of the second insulation layer overhang the upper edges of the second conductive layer patterns.Type: GrantFiled: March 27, 2000Date of Patent: August 20, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-won Choi, Dae-hyuk Chung, Woo-sik Kim, Shin-woo Nam, Yeo-cheol Yoon, Bum-su Kim, Jong-ho Park, Ji-hwan Choi
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Publication number: 20020088545Abstract: A gas injector is designed to better withstand the conditions inside a semiconductor manufacturing apparatus, such as a plasma etching apparatus. The gas injector includes a body in the form of a block of ceramic material, and a gas injection section formed by first and second gas injection holes extending through the block of ceramic material. The block of ceramic material has a first cylindrical portion and a second cylindrical portion extending from the first cylindrical portion. The first cylindrical portion is wider and longer than the second cylindrical portion. The first holes of the gas injecting section extend through the first cylindrical portion of the block of ceramic material, whereas the second holes extend through the second cylindrical portion contiguously each from a respective one of the first holes and concentric therewith. The first holes are also wider and longer than the second holes. The gas injector is disposed at an upper portion of a plasma etching apparatus.Type: ApplicationFiled: December 12, 2001Publication date: July 11, 2002Inventors: Doo Won Lee, Tae Ryong Kim, No Hyun Huh, Chang Won Choi, Byeung-Wook Choi
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Patent number: 6214688Abstract: Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode.Type: GrantFiled: April 9, 1999Date of Patent: April 10, 2001Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Hyun Hwang, Chang-Won Choi, Seok-Woo Nam, Bon-Young Koo
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Patent number: 6165840Abstract: Disclosed is an improved method for fabricating a DRAM cell capacitor which can prevent over-etching of polysilicon storage node. The method includes the steps of etching a first insulating layer on a semiconductor substrate to form a storage contact hole, filling the storage contact hole with a first conductive material to form a storage contact plug, forming a second insulating layer over the first insulating layer including the storage contact plug, forming a mask over the second insulating layer to define a storage node region, using the mask and etching the second and first insulating layers to form an opening therein to an upper surface of the storage contact plug, and filling the opening with a second conductive material to form a storage node.Type: GrantFiled: April 27, 1999Date of Patent: December 26, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-Won Choi, Chang-Hwan Lee, Chul Jung, Min-Seok Han
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Patent number: 5701162Abstract: A television channel display comprises remote controller signal receiver for receiving a channel number determined by a user, an MCU for receiving a signal output from the remote controller signal receiver, a memory for storing and outputting audio signals of the channel number and a broadcasting station name according to a control signal output from the MCU, an audio mixer for mixing the audio signal of the channel number and the broadcasting station name output from the memory, an aural processor for processing audio signals of an input broadcasting program, a multiplexer for selecting and outputting the audio signals of the audio mixer and the aural processor under a control of the MCU, and a speaker for converting and outputting audio current outputs from the multiplexer into an audio signal.Type: GrantFiled: October 10, 1995Date of Patent: December 23, 1997Assignee: LG Semicon Co., Ltd.Inventor: Chang Won Choi