Abstract: Disclosed are an aluminum-coated blank, a manufacturing method thereof, and an apparatus for manufacturing the same. The blank includes two or more aluminum-coated steel sheets connected together by a joint, each of the steel sheets including: a base steel sheet including 0.01-0.5 wt % of carbon, 0.01-1.0 wt % of silicon, 0.5-3.0 wt % of manganese, greater than 0 but not greater than 0.05 wt % of phosphorus, greater than 0 but not greater than 0.01 wt % of sulfur, greater than 0 but not greater than 0.1 wt % of aluminum, greater than 0 but not greater than 0.001 wt % of nitrogen, and the balance of iron and other inevitable impurities; and a coating layer including aluminum and formed on at least one surface of the base steel sheet.

Abstract: A display device includes: a first substrate; a plurality of metal layers on the first substrate and separated from each other; a buffer layer on the metal layer; a semiconductor layer on the buffer layer; a gate conductive layer on the semiconductor layer; a data conductive layer connected to the semiconductor layer; and a light-emitting element connected to the data conductive layer, wherein the metal layer includes a first portion partially overlapping the semiconductor layer in a third direction perpendicular to the surface of the first substrate, a second portion where the metal layer completely overlaps the semiconductor layer in the third direction, and a third portion where the metal layer does not overlap the semiconductor layer in the third direction.

Abstract: An electronic device and method with data scaling is provided herein. The electronic device may include a computing device that includes an analog computing circuit, where the computing device may scale an input of the analog computing circuit using a first scaling factor and/or scale a weight of the analog computing circuit using a second scaling factor, where the input includes a plurality of input values within a preset input maximum range of values of the computing device, and the weight includes a plurality of weight values within a preset weight maximum range of values of the computing device, and rescale an output of the analog computing circuit based on the first scaling factor and/or the second scaling factor. The first and second scaling factors may respectively scale values of the input and the weight to exceed respective preset maximum ranges of values.

Abstract: A display device comprises a thin film transistor layer comprising a first metal layer disposed on a substrate and a thin film transistor disposed on the first metal layer, first and second electrodes disposed in a display area on the thin film transistor layer and extending in parallel in a direction, a plurality of light emitting elements disposed between the first and second electrodes, and an alignment line disposed in a non-display area disposed adjacent to the display area and electrically connected to the first and second electrodes. The alignment line comprises metal patterns disposed in the first metal layer and spaced apart from each other, and a bridge portion disposed on the first metal layer and electrically connected to the metal patterns.

Abstract: A display device includes a conductive pattern on a substrate, a via layer on the conductive pattern with a via hole exposing the conductive pattern, a first electrode and a second electrode on the via layer and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, a bank layer on the first insulating layer defining an emission area and a subarea, a light-emitting element on the first insulating layer, and a first connection electrode and a second connection electrode on the first insulating layer and the light-emitting element. The first connection electrode electrically contacts an end of the light-emitting element, and the second connection electrode electrically contacts another end of the light-emitting element. The bank layer includes a bank extension portion extended to the subarea and the bank extension portion overlaps at least a portion of the via hole.

Abstract: A display device includes a substrate including a display area and a non-display area; pixels disposed in the display area and including respective light emitting units; a first conductive pattern disposed between the pixels; and a power source line disposed in the non-display area and electrically connected to the first conductive pattern. Each of the light emitting units includes a light emitting element, a first pixel electrode disposed on a first end of the light emitting element, and a second pixel electrode disposed on a second end of the light emitting element. The first conductive pattern and the second pixel electrode are disposed on a same layer.

Abstract: A method of fabricating a thin-film transistor (TFT) array substrate including forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a source electrode and a drain electrode comprising a plurality of metal layer patterns on the ohmic contact layer, in which the semiconductor layer, the ohmic contact layer, the source electrode and the drain electrode are formed through a single mask process, and one of the plurality of metal layer patterns is etched through a polishing process to form the source electrode and the drain electrode.

Abstract: A tiled display device includes a first display panel including a first lower structure including a first driver, and a first upper structure on the first lower structure, and a second display panel including a second lower structure that includes a second driver and that is adjacent to the first lower structure in a bonding area, and a second upper structure that is on the second lower structure and that is adjacent to the first upper structure, wherein the second lower structure at least partially overlaps the first upper structure, and wherein the first driver and the second driver are spaced apart from the bonding area in a plan view.

Abstract: A display device includes: a first substrate; a plurality of metal layers on the first substrate and separated from each other; a buffer layer on the metal layer; a semiconductor layer on the buffer layer; a gate conductive layer on the semiconductor layer; a data conductive layer connected to the semiconductor layer; and a light-emitting element connected to the data conductive layer, wherein the metal layer includes a first portion partially overlapping the semiconductor layer in a third direction perpendicular to the surface of the first substrate, a second portion where the metal layer completely overlaps the semiconductor layer in the third direction, and a third portion where the metal layer does not overlap the semiconductor layer in the third direction.

Abstract: A display device includes: a substrate; a gate insulating layer disposed on the substrate; a semiconductor layer disposed on the gate insulating layer and including a first semiconductor; a source electrode and a drain electrode disposed on the first semiconductor; and a data line disposed on the gate insulating layer, wherein the gate insulating layer includes a first portion overlapping the data line in a plan view and a second portion disposed adjacent to the first portion, and the second portion is thinner than the first portion.

Abstract: A method of fabricating a thin-film transistor (TFT) array substrate including forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a source electrode and a drain electrode comprising a plurality of metal layer patterns on the ohmic contact layer, in which the semiconductor layer, the ohmic contact layer, the source electrode and the drain electrode are formed through a single mask process, and one of the plurality of metal layer patterns is etched through a polishing process to form the source electrode and the drain electrode.

Abstract: Disclosed is a dense thin film, a fuel cell using the same and fabrication methods thereof. A method for fabricating a dense thin film comprises (1) forming a first thin film on a porous surface, and (2) forming, on a surface of the first thin film, a second thin film made of a homogeneous material with respect to the first thin film, thereby removing pinholes of the first thin film. The method for fabricating a dense thin film may comprise (1?) forming a first thin film on a porous surface, (2?) forming, on a surface of the first thin film, a second thin film made of a to heterogeneous material with respect to the first thin film, thereby removing pinholes of the first thin film, and (3?) etching a surface of the second thin film.

Abstract: A micro cell fuel cell using a nano porous structure according to a thin film process and an anodizing process as a template for implementing a porous structure of an electrode, its fabrication method, and a micro fuel cell stack using the same are disclosed. The micro-fuel cell includes a solid electrolyte and first and second electrodes separately formed on the electrolyte, wherein at least one of the first and second electrodes is supported by a template having a plurality of nano pores formed by depositing, anodizing and etching a thin film, and is a porous electrode with nano pores formed at positions corresponding to the entirety or a portion of the plurality of nano pores formed on the template. The micro-fuel cell can be fabricated based on the thin film process, and unit cells can be highly integrated to implement a micro-fuel cell system generating a high voltage and a high current.