Abstract: A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.

Abstract: An organic electroluminescent device and organic electroluminescent display device having enhanced efficiency are discussed. In one example, the organic electroluminescent device includes first and second electrodes facing each other on a substrate and at least two emission layers formed between the first and second electrodes and realizing blue light, wherein, among the emission layers, a first blue emission layer close to the first electrode includes a first blue dopant having a different maximum luminescence wavelength than that of a second blue dopant of a second blue emission layer close to the second electrode.

Abstract: An organic light emitting device containing a multilayer stack structure including n stacks between an anode and a cathode is described, wherein the respective stacks comprise a hole transport layer, a light emitting layer and an electron transport layer, an n-type charge generation layer and a p-type charge generation layer respectively provided between the different adjacent stacks, wherein the p-type charge generation layer comprises an indenofluorenedione derivative represented by Formula 1 or an imine derivative represented by Formula 2 or 3.

Abstract: An organic light emitting display device with enhanced luminous efficiency and color viewing angle and a method of manufacturing the same are disclosed. The method includes forming a first electrode of each of red, green, blue and white sub-pixels on a substrate, forming a white organic common layer on the first electrodes, and forming a second electrode on the white organic common layer, wherein the first electrodes each includes multiple transparent conductive layers and is formed such that a thickness of the first electrode of each of two sub-pixels among the red, green, blue and white sub-pixels is greater than a thickness of the first electrode of each of the other two sub-pixels, and at least two layers excluding the lowermost layer among the multiple transparent conductive layers of each first electrode are formed to cover opposite sides of the lowermost layer.

Abstract: A an organic electroluminescent display device includes an array substrate including a driving thin film transistor in a pixel region on a first substrate; an opposing substrate including an organic electroluminescent diode in the pixel region on a second substrate; an adhesive layer filling a space between the array substrate and the opposing substrate; and a connection spacer to electrically connect the organic electroluminescent diode with the driving thin film transistor.

Abstract: An organic light emitting display device is provided to avoid color change due to a viewing direction. The organic light emitting display includes a light compensation layer having a refractive index different than that of an insulating layer. The organic light emitting display may be disposed at the side to which light emitted from an organic light emitting layer is entered to change the path and phase of light, thereby coinciding cavity peak phases for each wavelength of white light emitted from an organic light emitting unit.

Abstract: A tandem white organic light emitting device having high efficiency and long lifespan by adjusting characteristics of a hole transport layer adjacent to a charge generation layer consisting of p-type and n-type charge generation layer is disclosed, the p-type charge generation layer is formed of organic materials only, and at least one organic material contained in the p-type charge generation layer has a LUMO level of ?6.0 eV to ?4.5 eV.

Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate, a first electrode formed on the thin film transistor, an organic emission layer, and a second electrode formed on the organic emission layer. The organic emission layer includes a first stack that includes a first emission layer formed on the first electrode to emit first color light, a second stack that includes a second emission layer formed on the first electrode to emit second color light, and a charge generation layer formed between the first and second stacks.

Abstract: A white organic light emitting device and a display device using the same to which a 2-peak spectrum is applied to execute white display comprises a first electrode and a second electrode disposed opposite each other on a substrate, and a blue light emitting unit and a phosphorescent light emitting unit provided between the first electrode and the second electrode, and a 2-peak white spectrum is formed through a first light emitting peak of the blue light emitting unit at a wavelength of 430 nm to 460 nm and a second light emitting peak of the phosphorescent light emitting unit at a wavelength of 530 nm to 630 nm.

Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Abstract: A tandem white organic light emitting device with improved efficiency, voltage and lifetime includes a first electrode and a second electrode opposing each other, a charge generation layer formed between the first electrode and the second electrode, a first stack disposed between the first electrode and the charge generation layer, the first stack including a first light emitting layer emitting blue light, and a second stack disposed between the charge generation layer and the second electrode, the second stack including a second light emitting layer including one or more hosts doped with a phosphorescent dopant emitting light having a longer wavelength than blue light, wherein the charge generation layer includes an n-type charge generation layer doped with a metal and a p-type charge generation layer made of an organic material.

Abstract: A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.

Abstract: An organic light emitting display device with enhanced luminous efficiency and color viewing angle and a method of manufacturing the same are disclosed. The method includes forming a first electrode of each of red, green, blue and white sub-pixels on a substrate, forming a white organic common layer on the first electrodes, and forming a second electrode on the white organic common layer, wherein the first electrodes each includes multiple transparent conductive layers and is formed such that a thickness of the first electrode of each of two sub-pixels among the red, green, blue and white sub-pixels is greater than a thickness of the first electrode of each of the other two sub-pixels, and at least two layers excluding the lowermost layer among the multiple transparent conductive layers of each first electrode are formed to cover opposite sides of the lowermost layer.

Abstract: An organic light emitting display device includes first and second electrodes facing each other on a substrate, a charge generation layer formed between the first and second electrodes, a first light emitting stack formed between the charge generation layer and the first electrode, and a second light emitting stack formed between the charge generation layer and the second electrode, wherein a hole injection layer of a light emitting stack to realize blue color of the first and second light emitting stacks is formed by doping a host formed of hexaazatriphenylene (HAT-CN) with 0.5% to less than 10% of a dopant formed of a hole transporting material based on a volume of the hole injection layer.

Abstract: An organic light emitting display device includes a first electrode and a second electrode disposed on a substrate opposite to each other, a first stack including a hole injection layer, a first hole transport layer, a first light emitting layer, and a first electron transport layer sequentially stacked on the first electrode, a second stack including a second hole transport layer, a second light emitting layer, and a second electron transport layer sequentially stacked between the first stack and the second electrode, and a charge generation layer disposed between the first stack and the second stack and including an N-type charge generation layer and a P-type charge generation layer to control charge balance between the first and second stacks. The P-type charge generation layer is doped with 1% to 20% of a hole transport material based on a volume of the P-type charge generation layer.

Abstract: Provided are a method of manufacturing an organic light emitting display device and an organic light emitting display device manufactured by the method. The method includes calculating a peak-luminance current density for each of a red sub-pixel, a blue sub-pixel, a green sub-pixel, and a white sub-pixel, calculating an average use current density for each of the red sub-pixel, blue sub-pixel, green sub-pixel, and white sub-pixel; determining a size of each sub-pixel with the peak-luminance current density and the average use current density, and forming the sub-pixels with the determined sizes of the respective sub-pixels. The present invention sets the size of each sub-pixel in consideration of a peak-luminance current density and an average use current density, thus easily achieving the peak luminance and enhancing the color-coordinate life.

Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Abstract: A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.

Abstract: An organic light emitting display panel includes a light emitting diode array substrate and an encapsulation substrate adhered to the light emitting array diode substrate by an adhesive film. The light emitting array diode substrate includes a driving thin film transistor formed on a substrate, an organic light emitting diode including a first electrode connected to the driving thin film transistor, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and first and second passivation layers formed on the second electrode. In this regard, the first passivation layer is formed of an organic compound having at least one of the structural formulae described in Formula 1 below: wherein R1, R2, R3, R4, R5, and R6 are each independently selected from substituted or unsubstituted C6-C40 aromatic groups.

Abstract: A method for manufacturing a thin film transistor is provided. In the method, a gate electrode is formed on a substrate. A crystalline gate insulating layer is formed on an entire surface of the substrate having the gate electrode formed thereon. A microcrystalline silicon layer and a doped amorphous silicon layer are sequentially formed on the crystalline gate insulating layer. A metal layer is deposited on the substrate including the crystalline gate insulating layer, the microcrystalline silicon layer and the doped amorphous silicon layer. Source and drain electrodes, an ohmic contact layer and an active layer are formed by etching predetermined portions of the metal layer and the doped amorphous silicon layer to expose a predetermined portion of the microcrystalline silicon layer.