Abstract: A peptide is described herein that has: (i) a simple structure compared to existing natural human erythropoietin, thus capable of easily passing through a tissue-blood barrier, (ii) excellent bioactivity with respect to cell-protecting activity, (iii) a low manufacturing cost, thus being economically advantageous, and (iv) no side effects on cell proliferation. Also, a pharmaceutical composition comprising the erythropoietin-derived peptide described herein as an active ingredient is described. The pharmaceutical composition may be used for preventing or treating cell damage-related illnesses, such as stroke, mechanical damage or ischemic damage to the nervous system, myocardial infarction, retinal damage, and diabetes. Also, the described pharmaceutical composition may be used for preventing cell damage.

Abstract: The present invention relates to a pyrrole derivative or a pharmaceutically or sitologically acceptable salt thereof, and composition for prevention, amelioration or treatment of gastrointestinal disorders comprising same as active ingredient. Through the results, it can be confirmed that the pharmacokinetic parameters, oral bioavailability and storage stability of the compound of the present invention are remarkably improved due to deuteration of the terminal methylamine moiety. The pyrrole derivative or the pharmaceutically or sitologically acceptable salt thereof the present invention exhibits excellent anticancer activity in addition to excellent proton pump inhibitory activity, and has improved pharmacokinetic parameters and chemical stability, and thus can be effectively used in the prevention, amelioration or treatment of gastrointestinal disorders, including gastric cancer.

Abstract: In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.

Abstract: In a method of manufacturing a semiconductor device, a preliminary insulating layer is formed on a substrate. A photoresist pattern is formed on the preliminary insulating layer. A central portion of the preliminary insulating layer is partially etched using the photoresist pattern as an etch mask to form a preliminary insulating layer pattern including a central portion and a peripheral portion on the substrate. The peripheral portion of the photoresist pattern is higher than that of the central portion of the preliminary insulating layer pattern. The preliminary insulating layer pattern is polished to form a planarized insulating layer on the substrate.

Abstract: In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.