Patents by Inventor Chang-Yeon Yoo

Chang-Yeon Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 7585757
    Abstract: In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: September 8, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Seon Ahn, Joon Kim, Jin-Hong Kim, Suk-Chul Bang, Eun-Kuk Chung, Hyung-Mo Yang, Chang-Yeon Yoo, Yun-Seung Kang, Kyung-Tae Jang
  • Method of manufaturing a semiconductor device
    Publication number: 20080081460
    Abstract: In a method of manufacturing a semiconductor device, a preliminary insulating layer is formed on a substrate. A photoresist pattern is formed on the preliminary insulating layer. A central portion of the preliminary insulating layer is partially etched using the photoresist pattern as an etch mask to form a preliminary insulating layer pattern including a central portion and a peripheral portion on the substrate. The peripheral portion of the photoresist pattern is higher than that of the central portion of the preliminary insulating layer pattern. The preliminary insulating layer pattern is polished to form a planarized insulating layer on the substrate.
    Type: Application
    Filed: September 24, 2007
    Publication date: April 3, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chang-Yeon Yoo, Chung-Ki Min, Yung-Jun Kim, Joon-Sang Park, Dong-Keun Kim, Tae-Eun Kim
  • Semiconductor device and method of manufacturing the same
    Publication number: 20060281290
    Abstract: In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.
    Type: Application
    Filed: June 5, 2006
    Publication date: December 14, 2006
    Inventors: Jong-Seon Ahn, Joon Kim, Jin-Hong Kim, Suk-Chul Bang, Eun-Kuk Chung, Hyung-Mo Yang, Chang-Yeon Yoo, Yun-Seung Kang, Kyung-Tae Jang