Abstract: The present disclosure provides a chemical solution preparation system and method. The chemical solution preparation system includes: a first mixing system, configured to mix a first chemical solution and a first diluent to obtain a first mixture; a second mixing system, configured to mix a second chemical solution and a second diluent to obtain a second mixture; a third mixing system, configured to mix the first mixture, the second mixture, and a third diluent to obtain a third mixture; an output system, configured to output the third mixture to a spray apparatus of the chemical mechanical polishing device; a sampling system, configured to collect a sample of the third mixture output from the output system; and a monitoring system, configured to monitor a status of the first mixture, a status of the second mixture, and a status of the third mixture.

Abstract: Embodiments of the present disclosure relate to CMP slurry, CMP equipment, a semiconductor structure, and a manufacturing method of a semiconductor structure. The CMP slurry is configured to thin a polycrystalline silicon structure, so as to obtain a polycrystalline silicon layer with a flat surface, and includes: silicon dioxide abrasive particles, a peroxy compound, and deionized water. The peroxy compound has a volume percentage not less than 3% and not greater than 10%.

Abstract: The present disclosure provides a chemical solution preparation system and method. The chemical solution preparation system includes: a first mixing system, configured to mix a first chemical solution and a first diluent to obtain a first mixture; a second mixing system, configured to mix a second chemical solution and a second diluent to obtain a second mixture; a third mixing system, configured to mix the first mixture, the second mixture, and a third diluent to obtain a third mixture; an output system, configured to output the third mixture to a spray apparatus of the chemical mechanical polishing device; a sampling system, configured to collect a sample of the third mixture output from the output system; and a monitoring system, configured to monitor a status of the first mixture, a status of the second mixture, and a status of the third mixture.

Abstract: The present disclosure provides a method of cleaning a wafer and a wafer cleaning apparatus. The method of cleaning a wafer includes: providing a wafer to be cleaned, the surface of the wafer having contaminants; and spraying a surfactant onto the surface of the wafer, and scrubbing the surface of the wafer with a polishing pad to remove the contaminants from the surface of the wafer.

Abstract: A method includes receiving a device having a first layer and a second layer over the first layer, the first layer having a first overlay mark. The method further includes forming a first resist pattern over the second layer, the first resist pattern having a second overlay mark. The method further includes performing a first overlay measurement using the second overlay mark in the first resist pattern and the first overlay mark; and performing one or more first manufacturing processes, thereby transferring the second overlay mark into the second layer and removing the first resist pattern. The method further includes performing one or more second manufacturing processes that include forming a third layer over the second layer. After the performing of the one or more second manufacturing processes, the method includes performing a second overlay measurement using the second overlay mark in the second layer and the first overlay mark.