Abstract: The present invention relates to a semiconductor device having a shielding layer. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.

Abstract: The present invention relates to a semiconductor device having a shielding layer and a method for making the same. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.

Abstract: A wafer defines a plurality of chips arranged in array manner. Each chip includes at least one aluminum pad and a middle material. The middle material covers the aluminum pad and is mounted on the aluminum pad.

Abstract: A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad.

Abstract: A copper bonding wire includes a line portion and a non-spherical block portion. The non-spherical block portion is physically connected to the line portion, and the cross-sectional area of the non-spherical block portion is bigger than that of the line portion.

Abstract: A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

Abstract: A semiconductor package structure using the same is provided. The semiconductor package structure includes a first semiconductor element, a second semiconductor element, a binding wire and a molding compound. The first semiconductor element includes a semiconductor die and a pad. The pad is disposed above the semiconductor die and includes a metal base, a hard metal layer disposed above the metal base and an anti-oxidant metal layer disposed above the hard metal layer. The hardness of the hard metal layer is larger than that of the metal base. The activity of the anti-oxidant metal layer is lower than that of the hard metal layer. The first semiconductor element is disposed above the second semiconductor element. The bonding wire is connected to the pad and the second semiconductor element. The molding compound seals the first semiconductor element and the bonding wire and covers the second semiconductor element.

Abstract: A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

Abstract: A wafer defines a plurality of chips arranged in array manner. Each chip includes at least one aluminum pad and a middle material. The middle material covers the aluminum pad and is mounted on the aluminum pad.

Abstract: A copper bonding wire includes a line portion and a non-spherical block portion. The non-spherical block portion is physically connected to the line portion, and the cross-sectional area of the non-spherical block portion is bigger than that of the line portion.

Abstract: A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad.