Abstract: The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.

Abstract: One or more embodiments relates to a substrate consisting of an ultrathin, conductive, shapeless metal oxide on SiO2/Si substrate. In one embodiment, the substrate facilitates experimental characterization of 2D materials simultaneously via optical identification of the single monolayer thickness of 2D materials and electron-based spectro-microscopy characterization.

Abstract: A resistive random access memory (RRAM) device includes a plurality of memory cells, each of at least a subset of the memory cells including first and second electrodes and an organic thin film compound mixed with silver perchlorate (AgClO4) salt as a base layer that is incorporated with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI), the base layer being formed on an upper surface of the first electrode and the second electrode being formed on an upper surface of the base layer. Resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClO4 salt in the base layer. A variation of device switching parameters is controlled as a function of an amount of infiltrated metal oxide molecules in the base layer.

Abstract: The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.

Abstract: Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.

Abstract: An array of out-of-plane, nanowires may be formed spontaneously when a material is deposited over a freshly sputter-deposited porous film under high vacuum. The nanowires may be formed without an apparent catalyst. It is the nanoporous structure of the sputter-deposited porous film that confines the size of permeated material domains during its vapor deposition, which may cause a certain surface-to-volume ratio and subsequent melting point reduction, rendering the domains of the material molten or partially molten at room temperature. The release of surface energy provides a force for the domains to diffuse and to eventually erupt from the porous thin film and may form nanowires. Due to the universality of higher surface energy for nanoparticles, the present nanowires may be applicable for scalable growth of one-dimensional nanostructures of various other materials with moderate melting points.

Abstract: Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.

Abstract: A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed.

Abstract: Structures useful for forming contacts to materials having low charge carrier mobility are described. Methods for their formation and use are also described. These structures include interdigitated electrodes capable of making electrical contact to semiconducting materials having low electron and/or whole mobility. In particular, these structures are useful for organic semiconducting devices made with conducting polymers and small molecules. They are also useful for semiconducting devices made with nanocrystalline semiconductors.

Abstract: A transfer chamber is disclosed having a first plate with a first surface configured to receive a sample and a second surface containing a groove. The second surface of the first plate surrounds the first surface of the first plate. A second plate has a first surface and a second surface containing a groove. A sealing component is disposed in the groove of the first plate or the second plate. A pivotable link couples the first plate and the second plate. The pivotable link is configured to hold the first plate, the second plate, and the sealing component together to substantially create an air-tight seal between the first surface of the first plate and the second surface of the second plate. The pivotable link is configured to open the seal in response to a pressure differential across the transfer chamber.

Abstract: An electrode comprising a plurality of structured pillars dispersed across a base contact and its method of manufacture are described. In one embodiment the structured pillars are columnar structures having a circular cross-section and are dispersed across the base surface as a uniformly spaced two-dimensional array. The height, diameter, and separation of the structured pillars are preferably on the nanometer scale and, hence, electrodes comprising the pillars are identified as nanostructured pillar electrodes. The nanostructured pillars may be formed, for example, by deposition into or etching through a surface template using standard lithography processes. Structured pillar electrodes offer a number of advantages when incorporated into optoelectronic devices such as photovoltaic cells. These include improved charge collection efficiency via a reduction in the carrier transport distance and an increase in electrode-photoactive layer interface surface area.

Abstract: A bulk heterojunction comprising an intermixed blend of fully inorganic n- and p-type particles and its method of manufacture are described. The particles are preferably nanometer-scale, spherical-shaped particles known as nanocrystals which are assembled into a densely packed three-dimensional array. The nanocrystals are preferably fabricated from a photo-active material which, in combination with the nanocrystal shape and size, can be engineered to produce a bulk heterojunction with a specific absorption spectrum. The bulk heterojunction is preferably formed by dispersing a predetermined ratio of the desired n- and p-type nanocrystals in an organic solvent and employing low-cost solution processing techniques to deposit a film having the desired thickness, relative concentration of nanocrystal types, and degree of intermixing onto a substrate.