Abstract: The present invention discloses an encoding apparatus using a Discrete Cosine Transform (DCT) scanning, which includes a mode selection means for selecting an optimal mode for intra prediction; an intra prediction means for performing intra prediction onto video inputted based on the mode selected in the mode selection means; a DCT and quantization means for performing DCT and quantization onto residual coefficients of a block outputted from the intra prediction means; and an entropy encoding means for performing entropy encoding onto DCT coefficients acquired from the DCT and quantization by using a scanning mode decided based on pixel similarity of the residual coefficients.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: New photobase generators suitable for use in photoresists are provided that correspond to Formula (I): X1—R1—O—C(?O)N(R2)R3??(I) wherein X1 is an optionally substituted aromatic group; R1 is a linker; and R2 and R3 are the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of R2 and R3 is an optionally substituted branched alkyl group having 4 or more carbon atoms.

Abstract: Multiple-pattern forming methods are provided.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: New photobase generators suitable for use in photoresists are provided that correspond to Formula (I): X1—R1—O—C(?O)N(R2)R3??(I) wherein X1 is an optionally substituted aromatic group; R1 is a linker; and R2 and R3 are the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of R2 and R3 is an optionally substituted branched alkyl group having 4 or more carbon atoms.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: Multiple-pattern forming methods are provided.

Abstract: Embodiments relate to an apparatus for coating a photoresist layer and a photolithography method using the apparatus. In embodiments, the apparatus may include a rotatable wafer support for supporting a wafer to be coated with a photoresist layer, a beam nozzle for performing WEE (Wafer Edge Exposure) with respect to a photoresist layer at an edge of the wafer on the wafer support, and a spray nozzle for spraying an alkali solution onto an edge of the wafer exposed through the beam nozzle.

Abstract: Disclosed is a technique of manufacturing a semiconductor device and a corresponding device. A metal line may be formed in a semiconductor device using a photoresist pattern with an oxide layer formed on the surface of a metal film, in accordance with embodiments. A heat-treatment process on a metal film may be performed to form an oxide-based thin film on a surface of the metal film. A photoresist pattern may be formed over a metal film. A metal film may be etched using a photoresist pattern as a mask. In embodiments, heat-treatment of a metal film may be performed in-situ using a baking unit provided in a track device that performs photo processing. Etching a metal film and etching an oxide-based thin film may be performed simultaneously.

Abstract: A CMOS image sensor and a method for fabricating the same improve photosensitivity by imparting a color filter layer with the function of a microlens layer. The CMOS image sensor includes a semiconductor substrate; a plurality of photo-sensing elements formed in the semiconductor substrate; and a color filter layer comprised of a plurality of color filters for filtering light according to wavelength, wherein the plurality of color filters correspond to the plurality of photo-sensing elements and each color filter has a predetermined curvature for focusing light and for transmitting the focused light according to a corresponding wavelength.

Abstract: A CMOS image sensor and a method for fabricating the same improve photosensitivity by imparting a color filter layer with the function of a microlens layer. The CMOS image sensor includes a semiconductor substrate; a plurality of photo-sensing elements formed in the semiconductor substrate; and a color filter layer comprised of a plurality of color filters for filtering light according to wavelength, wherein the plurality of color filters correspond to the plurality of photo-sensing elements and each color filter has a predetermined curvature for focusing light and for transmitting the focused light according to a corresponding wavelength.

Abstract: A method and system for monitoring a curvature of a micro-lens in-line is disclosed. According to embodiments, sizes of circles (or circle images) from a top view of a micro-lens are measured and correlated to a change in focus depth of an optical scope. A method in accordance with embodiments can include the steps of: (i) measuring a diameter or area of a circle in the micro-lens when focusing a scope on a top point of the micro-lens; (ii) measuring a diameter or area of one or more second circles in the micro-lens by focusing the scope on one or more points lower than the top point of the micro-lens in stages, each stage correlated to changing a depth of focus of the scope; and (iii) calculating the curvature of the micro-lens with each diameter or area of the measured circles.