Abstract: An adhesive composition, a method for preparing the same, a reticle assembly including the same, and a method for fabricating the reticle assembly including the same are provided. The adhesive composition includes a polyphenol compound including tannic acid, a polymer including polyvinyl alcohol, and a solvent including water and alcohol.

Abstract: An adhesive composition, a method for preparing the same, a reticle assembly including the same, and a method for fabricating the reticle assembly including the same are provided. The adhesive composition includes a polyphenol compound including tannic acid, a polymer including polyvinyl alcohol, and a solvent including water and alcohol.

Abstract: An adhesive composition, a method for preparing the same, a reticle assembly including the same, and a method for fabricating the reticle assembly including the same are provided. The adhesive composition includes a polyphenol compound including tannic acid, a polymer including polyvinyl alcohol, and a solvent including water and alcohol.

Abstract: A message sharing method includes: receiving image data captured via an imaging unit; receiving text input by a user via the input unit; analyzing, by a processor, the text and the image data and extracting a first object related to the user by using at least one of a result of analyzing the text, a result of analyzing the image data, and a sensed value obtained from a sensor unit; editing the image data to further include the extracted first object, and converting the edited image data to a thumbnail format; sharing the converted image data and the text with another user via a chat room.

Abstract: Provided is a pellicle for exposure to extreme ultraviolet light (EUVL) according to an example embodiment, and the pellicle includes a pellicle membrane; and a frame attached to the pellicle membrane, wherein the pellicle membrane includes a carbon-based main layer that has a first surface and a second surface, which are two surfaces opposite to each other; and a boron-based enhancement layer covering at least one surface selected from the first surface and the second surface. The pellicle according to an example embodiment may be used for an extended period of time in an extreme ultraviolet light exposure environment.

Abstract: A message sharing method includes: receiving image data captured via an imaging unit; receiving text input by a user via the input unit; analyzing, by a processor, the text and the image data and extracting a first object related to the user by using at least one of a result of analyzing the text, a result of analyzing the image data, and a sensed value obtained from a sensor unit; editing the image data to further include the extracted first object, and converting the edited image data to a thumbnail format; sharing the converted image data and the text with another user via a chat room.

Abstract: Provided is a pellicle for exposure to extreme ultraviolet light (EUVL) according to an example embodiment, and the pellicle includes a pellicle membrane; and a frame attached to the pellicle membrane, wherein the pellicle membrane includes a carbon-based main layer that has a first surface and a second surface, which are two surfaces opposite to each other; and a boron-based enhancement layer covering at least one surface selected from the first surface and the second surface. The pellicle according to an example embodiment may be used for an extended period of time in an extreme ultraviolet light exposure environment.

Abstract: In one example embodiment, an image providing method includes capturing, by a processor, a first partial image while applying a first image processing filter at a first time, capturing, by the processor, a second partial image while applying a second image filter at a second time after the first time, and generating, by the processor, a collage image by merging the first partial image and the second partial image at a third time after the second time.

Abstract: In one example embodiment, an image providing method includes capturing, by a processor, a first partial image while applying a first image processing filter at a first time, capturing, by the processor, a second partial image while applying a second image filter at a second time after the first time, and generating, by the processor, a collage image by merging the first partial image and the second partial image at a third time after the second time.

Abstract: A semiconductor device manufacturing apparatus includes a mask stage including a mask holder system that fixes a photomask, the mask holder system having a first fixing portion mounted at a first position of the mask holder system to fix the photomask, and a second fixing portion at a second position of the mask holder system and spaced apart from the first position, the second fixing portion fixing a pellicle assembly to be spaced apart from the photomask on the first fixing portion.

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

Abstract: The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

Abstract: The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

Abstract: The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

Abstract: Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

Abstract: The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

Abstract: The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.

Abstract: The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.