Patents by Inventor Chang Young Ju

Chang Young Ju has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor and method of fabricating the same
    Patent number: 8048745
    Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device can include a transistor structure including a gate electrode and a first channel region and source/drain regions on a substrate, and a second channel region and source/drain regions provided on the transistor structure. Accordingly, transistor operations can utilize the current path above and below the gate electrode.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: November 1, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Chang Young Ju
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20090065854
    Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes second-conductive-type drift areas formed in a first-conductive-type well of a semiconductor substrate while being spaced apart from each other a vertical area protruding from the drift areas, and a second-conductive-type source/drain area formed on the vertical area.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 12, 2009
    Inventor: CHANG YOUNG JU
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20090065865
    Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device can include a transistor structure including a gate electrode and a first channel region and source/drain regions on a substrate, and a second channel region and source/drain regions provided on the transistor structure. Accordingly, transistor operations can utilize the current path above and below the gate electrode.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 12, 2009
    Inventor: CHANG YOUNG JU