Abstract: Various embodiments herein each include at least one of systems, methods, and software for instantiating, executing, and operating dynamic hybrid computing environments, such as in cloud computing. Some such embodiments include allocating computing resources of a first server cluster to instantiate a first cluster and to establish a computing session. This embodiment may then initiate execution of a program within the first cluster that offloads at least one computing task to a second cluster, when the second cluster is instantiated, to leverage high-computing speed performance capabilities of the second cluster with regard to certain computing operations. Upon completion of program execution, the second cluster is then deallocated.

Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.

Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.

Abstract: Disclosed are a transparent optical shutter which may be manufactured at the wafer level, and a method of manufacturing a transparent optical shutter at the wafer level. In the disclosed optical shutter, a polymer-based material is used as a transparent protective layer for ensuring the mechanical or chemical stability of the optical shutter, and thus, the shutter may be manufactured at the wafer level in large quantities. Also, a layer which is optically transparent and has excellent heat conductivity is disposed under the transparent protective layer.

Abstract: An infrared transmission large-area shutter is provided. The infrared transmission large-area shutter includes a first contact layer on a substrate, a plurality of stacks formed in a two-dimensional (2D) array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer which are formed sequentially in this order on the first contact layer, a first electrode formed on the first contact layer, a plurality of second electrodes on the second contact layers, a first polymer layer that surrounds sidewalls of the plurality of stacks on the first contact layer, and a second polymer layer, which is transparent to infrared rays, to cover the second electrode on the second contact layer. A through hole corresponding to the plurality of stacks is formed in the substrate.

Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.

Abstract: A large-area transmissive type optical image modulator, a method of manufacturing the same, and an optical apparatus including the transmissive type optical image modulator are provided. The large-area transmissive type optical image modulator includes: a base substrate; a first expitaxial layer formed on the base substrate; a second expitaxial layer formed on the first expitaxial layer; a first electrode formed on the first expitaxial layer and spaced apart from the second expitaxial layer; a second electrode formed on the second expitaxial layer; and a transparent substrate covering the second expitaxial layer and the second electrode, wherein the base substrate includes a through hole corresponding to a light emitting area, and the first expitaxial layer may include an n-type or p-type doping material.

Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

Abstract: Disclosed are a transparent optical shutter which may be manufactured at the wafer level, and a method of manufacturing a transparent optical shutter at the wafer level. In the disclosed optical shutter, a polymer-based material is used as a transparent protective layer for ensuring the mechanical or chemical stability of the optical shutter, and thus, the shutter may be manufactured at the wafer level in large quantities. Also, a layer which is optically transparent and has excellent heat conductivity is disposed under the transparent protective layer.

Abstract: An optical device includes a gallium arsenide (GaAs) substrate, and a multiple quantum well structure formed on the GaAs substrate and having a quantum well layer and a quantum barrier layer. In the optical device, the quantum well layer is formed of a first semiconductor material that has a bandgap energy which is lower than that of the GaAs substrate and receives a compressive strain from the GaAs substrate, and the quantum barrier layer is formed of a second semiconductor material that has a bandgap energy which is higher than that of the GaAs substrate and receives a tensile strain from the GaAs substrate.

Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.

Abstract: A transmissive image modulator for allowing image modulation over a wide bandwidth with multiple Fabry-Perot resonant modes and multiple absorption modes is provided. The transmissive image modulator includes a lower reflection layer; an active layer disposed on the lower reflection layer, including multiple quantum well layers and multiple barrier layers; an upper reflection layer disposed on the active layer; and at least one micro-cavity layer disposed in at least one of the lower and upper reflection layer. The active layer and the at least one micro-cavity layer have thicknesses of a multiple of ?/2, where ? is a resonant wavelength.

Abstract: An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.

Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.

Abstract: An optical modulator unit, an optical modulator, and a method of fabricating are provided. The optical modulator unit includes a first contact layer transmitting infrared rays, a lower reflection layer disposed on the first contact layer, an active layer, including a multiple quantum well, disposed on the lower reflection layer, and an upper reflection layer disposed on the active layer. The optical modulator includes a plurality of optical modulator units sharing the first contact layer. The method includes sequentially stacking a first contact layer, a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer on a substrate; etching the second contact layer, the upper reflection layer, the active layer, and the lower reflection layer, exposing a surface of the first contact layer; forming a first electrode on the first contact layer; and forming a second electrode on the second contact layer.

Abstract: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

Abstract: An infrared transmission large-area shutter is provided. The infrared transmission large-area shutter includes a first contact layer on a substrate, a plurality of stacks formed in a two-dimensional (2D) array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer which are formed sequentially in this order on the first contact layer, a first electrode formed on the first contact layer, a plurality of second electrodes on the second contact layers, a first polymer layer that surrounds sidewalls of the plurality of stacks on the first contact layer, and a second polymer layer, which is transparent to infrared rays, to cover the second electrode on the second contact layer. A through hole corresponding to the plurality of stacks is formed in the substrate.

Abstract: A large-area transmissive type optical image modulator, a method of manufacturing the same, and an optical apparatus including the transmissive type optical image modulator are provided. The large-area transmissive type optical image modulator includes: a base substrate; a first expitaxial layer formed on the base substrate; a second expitaxial layer formed on the first expitaxial layer; a first electrode formed on the first expitaxial layer and spaced apart from the second expitaxial layer; a second electrode formed on the second expitaxial layer; and a transparent substrate covering the second expitaxial layer and the second electrode, wherein the base substrate includes a through hole corresponding to a light emitting area, and the first expitaxial layer may include an n-type or p-type doping material.

Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.

Abstract: An optical modulator unit, an optical modulator, and a method of fabricating are provided. The optical modulator unit includes a first contact layer transmitting infrared rays, a lower reflection layer disposed on the first contact layer, an active layer, including a multiple quantum well, disposed on the lower reflection layer, and an upper reflection layer disposed on the active layer. The optical modulator includes a plurality of optical modulator units sharing the first contact layer. The method includes sequentially stacking a first contact layer, a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer on a substrate; etching the second contact layer, the upper reflection layer, the active layer, and the lower reflection layer, exposing a surface of the first contact layer; forming a first electrode on the first contact layer; and forming a second electrode on the second contact layer.