Abstract: A hand tool holder structure includes a first body, a second body, and a third body. The first body is provided with a receiving face, multiple first receiving grooves, a first limit portion, a first pivot portion, a recess, multiple first resting blocks, a snap-fit portion, and a first inclined face. The second body is provided with multiple second receiving grooves, a first receiving chamber, a third pivot portion, a first pivot hole, a second inclined face, a first locking block, a second limit portion, a first locking section, and a second locking section. The third body is provided with multiple third receiving grooves, a second receiving chamber, a fourth pivot portion, a second pivot hole, a third inclined face, a second locking block, a third limit portion, a third locking section, and a fourth locking section.

Abstract: A hand tool structure includes a main body and a laser body mounted on the main body. The main body is provided with at least one operation end. The laser body is formed on a whole surface or a partial surface of the at least one operation end by a working machine during a laser process. The whole surface or partial surface of the at least one operation end is provided with at least one first friction face formed by the laser process. The at least one first friction face is a rough surface with particles. The at least one first friction face increases a contact friction force between the at least one operation end and the workpiece.

Abstract: A tape structure includes a first body, a first laser body, and a second laser body. The first body is provided with a stop portion, a first surface, a second surface, and multiple grooves. The first laser body is provided on the first surface and includes multiple laser lines distributed on the first surface. The first surface forms a first friction face. The second laser body is provided on the second surface and includes multiple laser lines distributed on the second surface. The second surface forms a second friction face. The stop portion is provided with the first laser body and the second laser body and formed with the first friction face and the second friction face. The first laser body and the second laser body are formed by the laser process.

Abstract: A pliers structure includes a main body and a laser body mounted on the main body. The main body includes pliers, a pipe wrench, needle nose pliers, water pump pliers, a wire stripper, electrician pliers, universal pliers, snap ring pliers, bathroom pliers, plumbing pliers, slip-joint pliers, a vise, filter pliers or car pliers. The main body is provided with an operation end. The laser body is mounted on the operation end. The laser body is formed on a whole surface or a partial surface of the operation end by a working machine during a laser process. The whole surface or partial surface of the operation end is provided with a friction face formed by the laser process, including peeling, coloring, concentration, or carbonization. The friction face is a rough surface with particles to increase the friction force is use.

Abstract: A hex wrench structure includes a main body and a laser body. An operation end is provided on the main body. The operation end has six faces and an end face. The six faces surround the end face. The operation end is provided with a chamfered corner located between the six faces and the end face. The operation end is provided with an axis. The six faces are arranged in an annular shape around the axis. The laser body is formed on a whole surface or a partial surface of the operation end by a working machine during a laser process. The whole surface or partial surface of the operation end is provided with a friction face formed by the laser process. The friction face increases a contact friction force between the operation end and the workpiece.

Abstract: A hand tool holding structure includes a first body, a second body, multiple third bodies, a fourth body, an elastic member, and a fifth body. The first body has a first pivot portion, a second pivot portion, a mounting portion, multiple first receiving slots, a first abutting edge, and a second abutting edge. The second body has a second receiving slot, a first abutting portion, a third receiving slot, and a second abutting portion. Each of the third bodies has a locking portion, a first inclined plane, an abutting face, a second inclined plane, and a third abutting portion. The fourth body has a fourth receiving slot, a fifth receiving slot, and a third inclined plane. The elastic member is mounted on the second pivot portion and biased between the second abutting edge and the second abutting portion. The fifth body is mounted on the first body.

Abstract: A tool box structure includes multiple tool boxes. Each of the tool boxes includes a first case, a second case, a first restriction unit, and a second restriction unit. The first case is provided with a receiving space, multiple first mounting portions, a first locking portion, a first inclined face, two second mounting portions, and a limit portion. The second case is provided with multiple third mounting portions, a second locking portion, a second inclined face, two fourth mounting portions, a first receiving groove, a second receiving groove, and a third receiving groove. The first restriction unit is mounted in the first receiving groove and moved in the first receiving groove to restrict or release the limit portion. The second restriction unit is mounted in the second receiving groove. The second restriction unit is assembled with the first restriction unit.

Abstract: A wrench includes a main body, a mounting member, a push rod, two push blocks, a first elastic member, a handle, and a drive mechanism. The main body has a support arm, two pivoting portions, a rotation passage, a first receiving hole, a first receiving slot, two second receiving slots, a second receiving hole, and a shank. The push rod has a positioning element. Each of the push blocks has a first received portion, a second received portion, a third mounting portion, a first locking section, a second locking section, a first locking groove, and a second locking groove. The drive mechanism has a driving head, a control rod, and a second elastic member. The driving head has two fitting portions, a third receiving hole, multiple first positioning portions, and an operation end. The control rod has a second positioning portion and a stepped portion.

Abstract: A wrench includes a main body, a mounting member, a push rod, two push blocks, a first elastic member, a handle, and a drive mechanism. The main body has a support arm, two pivoting portions, a rotation passage, a first receiving hole, a first receiving slot, two second receiving slots, a second receiving hole, and a shank. The push rod has a positioning element. Each of the push blocks has a first received portion, a second received portion, a third mounting portion, a first locking section, a second locking section, a first locking groove, and a second locking groove. The drive mechanism has a driving head, a control rod, and a second elastic member. The driving head has two fitting portions, a third receiving hole, multiple first positioning portions, and an operation end. The control rod has a second positioning portion and a stepped portion.

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises a well layer and a barrier layer, wherein the barrier layer has a band gap; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer comprises a band gap which is greater than the band gap of the barrier layer; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; a confinement layer between the first aluminum-containing layer and the active region; and a second aluminum-containing layer between the second semiconductor structure and the first electron blocking layer; wherein both the first alumi

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the fi

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-conta

Abstract: A clamp lamp could clamp a screen having a front surface and a rear surface is provided. The clamp lamp includes a first clip, a second clip and a light-emitting module. When the clamp lamp clamps an edge of the screen, the first and second clips abut on the front surface and the rear surface of the screen respectively. The light-emitting module is connected to the first clip and includes a casing, a light-emitting element and a light-reflecting element. The casing has a light outlet. The light-emitting element is disposed in the casing and configured to emit a light and reflect the light to illuminate the front of the front surface through the light outlet. The light-reflecting element has first and second reflecting surfaces connected to each other. The first reflecting surface has several reflecting points, each having a radius of curvature equal to or greater than 25 mm.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A clamp lamp could clamp a screen having a front surface and a rear surface is provided. The clamp lamp includes a first clip, a second clip and a light-emitting module. When the clamp lamp clamps an edge of the screen, the first and second clips abut on the front surface and the rear surface of the screen respectively. The light-emitting module is connected to the first clip and includes a casing, a light-emitting element and a light-reflecting element. The casing has a light outlet. The light-emitting element is disposed in the casing and configured to emit a light and reflect the light to illuminate the front of the front surface through the light outlet. The light-reflecting element has first and second reflecting surfaces connected to each other. The first reflecting surface has several reflecting points, each having a radius of curvature equal to or greater than 25 mm.

Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the fi

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: The present invention discloses an illumination device for an electronic device. The electronic device has a screen and a host, wherein a first lateral side of the screen is pivotally connected to the host having a keyboard surface. The illumination device includes a lampshade, a clamping portion and a light source. The clamping portion is connected to the lampshade and clamps the illumination device on a second lateral side of the screen, wherein the second lateral side is an opposite side of the first lateral side. The light source is disposed in the lampshade and provides an illuminating light, wherein a fixed angle is formed between an optical axis of the illuminating light and a keyboard surface of the host.