Abstract: Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.

Abstract: A sensor-type semiconductor package and a fabrication method thereof are provided. The fabrication method of the sensor-type semiconductor package includes steps of: providing a wafer having sensor chips; attaching light-permeable bodies to the sensor chips, wherein each light-permeable body has a covering layer and an adhesive layer; singulating the wafer so as to obtain a plurality of separated sensor chips with the light-permeable bodies attached thereon; attaching and electrically connecting the separated sensor chips to a substrate module having substrates, forming an encapsulant encapsulating the sensor chips and the light-permeable bodies; cutting the encapsulant along edges of the light-permeable bodies to a depth at least corresponding the bottom edges of the covering layers; removing the covering layers with the encapsulant mounted thereon to expose the light-permeable bodies; and cutting between the substrates to obtain a plurality of sensor-type semiconductor packages.

Abstract: This invention provides a sensor semiconductor package and a method for fabricating the same. The method includes: mounting on a substrate a sensor chip having a sensor area; electrically connecting the sensor chip and the substrate by means of bonding wires; forming on a transparent member an adhesive layer with an opening corresponding in position to the sensor area; and mounting the transparent member on the substrate via the adhesive layer while heating the substrate, such that the adhesive layer melts, to thereby encapsulate the periphery of the sensor chip and the bonding wires while exposing the sensor area from the adhesive layer. Thus, the sensor area is sealed by the transparent member cooperative with the adhesive layer, making the sensor semiconductor package thus-obtained dam-free, light, thin, and compact, and incurs low process costs. Also, the product reliability is enhanced since the bonding wires are encapsulated by the adhesive layer without severing concern.

Abstract: A sensor semiconductor device and a method for fabricating the same are provided. At least one sensor chip is mounted and electrically connected to a lead frame. A first and a second encapsulation molding processes are sequentially performed to form a transparent encapsulant for encapsulating the sensor chip and a part of the lead frame and to form a light-impervious encapsulant for encapsulating the transparent encapsulant. The transparent encapsulant has a light-pervious portion formed at a position corresponding to and above a sensor zone of the sensor chip. The light-pervious portion is exposed from the light-impervious encapsulant. Light may penetrate the light-pervious portion, without using an additional cover board, thereby reducing manufacturing steps and costs.

Abstract: A sensor-type package and a method for fabricating the same are provided. A wafer having a plurality of semiconductor chips is provided, wherein a plurality of holes are formed on a first surface of each of the semiconductor chips, and a plurality of metallic pillars formed in the holes and a plurality of bond pads connected to the metallic pillars form through silicon vias (TSVs). A groove is formed on a second surface of each of the semiconductor chips to expose the metallic pillars. A plurality of sensor chips having TSVs are stacked in the grooves of the semiconductor chips and electrically connected to the exposed metallic pillars. A transparent cover is mounted onto the second surfaces of the semiconductor chips to cover the grooves. A plurality of conductive components are implanted on the bond pads of the semiconductor chips. The wafer is cut along borders among the semiconductor chips.

Abstract: A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier is greater than that of the die pad, allowing the connecting pads on the carrier to be exposed from the die pad. At least a semiconductor chip is attached to a side of an assembly including the die pad and the carrier, and is electrically connected to the connecting pads of the carrier and the leads via bonding wires. A package encapsulant encapsulates the semiconductor chip, the bonding wires, a part of the carrier and a part of the leadframe, allowing a bottom surface of the carrier and a part of the leads to be exposed from the package encapsulant.

Abstract: The invention discloses a sensor package and a method for fabricating the same. The sensor package includes: a substrate with an opening; a sensor chip disposed in the opening and electrically connected to the substrate; an encapsulant filling spacing between the sensor chip and the opening so as to secure the sensor chip to the substrate; and a transparent cover attached to the substrate via an adhesive layer, wherein the adhesive layer covers the sensor chip and bonding wires and is formed with an opening for exposing sensor region of the sensor chip. Securing the sensor chip in the opening of the substrate reduces the height of the sensor package, and meanwhile the process cost is reduced by eliminating the need of formation of conductive bumps on the sensor chip or the transparent cover and eliminating the need of specially designed substrate.

Abstract: A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices.

Abstract: The present invention proposes a multi-chip semiconductor device having leads and a method for fabricating the same. The method includes the steps of: providing a substrate having a plurality of connection pads disposed on a surface thereof; mounting a plurality of semiconductor chips on the surface of the substrate, and electrically connecting the semiconductor chips to the surface of the substrate; forming an encapsulant on the substrate to encapsulate the semiconductor chips and expose the connection pads to form a package unit; and providing a lead frame having a plurality of leads, and electrically connecting the connection pads exposed from the package unit to the leads of the lead frame to form a multi-chip semiconductor device having leads, thereby forming a multi-chip semiconductor device having leads.

Abstract: A sensor-type semiconductor device and manufacturing method thereof are disclosed.

Abstract: The present invention provides a sensor-type semiconductor package and a method for fabricating the same. The method includes the steps of: providing a wafer having a plurality of sensor chips for mounting the wafer on a carrier board having an insulation layer, a plurality of conductive traces, and a substrate; forming a plurality of grooves among the solder pads on the active surfaces of the adjacent sensor chips, so as to expose the conductive traces and form a metal layer in the grooves, to electrically connect to the solder pads on the active surfaces of the adjacent sensor chips and the conductive traces; disposing a transparent medium on the wafer to cover the sensing areas of the sensor chips; removing the substrate, so as to expose the conductive traces and the insulation layer; and cutting the sensor chips along the borders to form a plurality of sensor-type semiconductor packages.

Abstract: This invention discloses a sensor semiconductor device and a manufacturing method thereof, including: providing a wafer having a plurality of sensor chips, forming a plurality of grooves between bond pads on active surfaces of the adjacent sensor chips; forming conductive traces in the grooves for electrically connecting the bond pads; mounting a transparent medium on the wafer for covering sensing areas of the sensor chips; thinning the sensor chips from the non-active surfaces down to the grooves, thereby exposing the conductive traces; cutting the wafer to separate the sensor chips; mounting the sensor chips on a substrate module having a plurality of substrates, electrically connecting the conductive traces to the substrates; providing an insulation material on the substrate module and between the sensor chips so as to encapsulate the sensor chips but expose the transparent medium; and cutting the substrate module to separate a plurality of resultant sensor semiconductor devices.

Abstract: A sensor semiconductor package and a fabrication method thereof are provided in the present application. The fabrication method comprises steps of: forming a plurality of grooves on a wafer between bond pads on active surfaces of every adjacent chips; forming metal layers in the grooves for electrically connecting with the bond pads of adjacent chips; thinning the non-active surfaces to expose the metal layers therefrom; forming a cover layer on the non-active surfaces with the metal layers are exposed therefrom; forming a solder resist layer on the covering layer and the conductive wirings with terminals of the conductive wirings are exposed therefrom; and cutting along cutting paths between every sensor chips to form a plurality of sensor semiconductor packages. Accordingly, the prior art problems such as misalignment of forming beveled grooves, concentrated stress and breakage can be solved.

Abstract: The invention provides a sensor-type semiconductor package and fabrication method thereof. The fabrication method includes steps of: attaching a sensor chip to a chip carrier; electrically connecting the sensor chip and a chip carrier via a plurality of bonding wires; mounting a light-permeable body to the sensor chip with an adhesive layer as a partition therebetween, wherein the planar size of the light-permeable body is larger than a predefined planar size of the sensor-type semiconductor package to be formed; forming an encapsulant on the chip carrier for encapsulating the sensor chip and the bonding wires with the upper surface of the light-permeable body being exposed from the encapsulant; and cutting through the light-permeable body, the encapsulant and the chip carrier according to the predefined planar size. Accordingly the contacting area between the cut light-permeable body and the cut encapsulant increased and the bonding therebetween is reinforced.

Abstract: A sensor-type semiconductor package and a fabrication method thereof are provided. The fabrication method of the sensor-type semiconductor package includes steps of: providing a wafer having sensor chips; attaching light-permeable bodies to the sensor chips, wherein each light-permeable body has a covering layer and an adhesive layer; singulating the wafer so as to obtain a plurality of separated sensor chips with the light-permeable bodies attached thereon; attaching and electrically connecting the separated sensor chips to a substrate module having substrates, forming an encapsulant encapsulating the sensor chips and the light-permeable bodies; cutting the encapsulant along edges of the light-permeable bodies to a depth at least corresponding the bottom edges of the covering layers; removing the covering layers with the encapsulant mounted thereon to expose the light-permeable bodies; and cutting between the substrates to obtain a plurality of sensor-type semiconductor packages.

Abstract: A sensor-type package and a fabrication method thereof are provided. A sensor-type chip is mounted on a substrate and is electrically connected to the substrate via bonding wires. A light-pervious body is attached to the sensor-type chip, and has one surface covered with a covering layer and another surface formed with an adhesive layer. An encapsulant encapsulates the light-pervious body. As an adhesive force between the covering layer and the encapsulant is greater than that between the covering layer and the light-pervious body, the covering layer and a portion of the encapsulant located on the covering layer can be concurrently removed, such that the light-pervious body is exposed and light can pass through the light-pervious body to be captured by the sensor-type chip. The above arrangement eliminates the need of using a dam structure as in the prior art and provides a compact sensor-type package with improved fabrication reliability.