Abstract: Disclosed is a plasma generator. The plasma generator may include a gripping portion including at least one interface unit configured to receive an input from a user; a head portion including a plasma generating portion configured to generate the plasma; a first cartridge configured to detachably couple at a first end of the head portion and generate the plasma over a predetermined region; and a light irradiation portion provided at a second end of the head portion.

Abstract: The present invention relates to novel compounds having a histone deacetylase 6 (HDAC6) inhibitory activity, optical isomers thereof or pharmaceutically acceptable salts thereof, a pharmaceutical use thereof, and a method for preparing the same. According to the present invention, the novel compounds, optical isomers thereof or pharmaceutically acceptable salts thereof have the histone deacetylase 6 (HDAC6) inhibitory activity, and are effective in preventing or treating HDAC6-related diseases, comprising infectious diseases; neoplasm; internal secretion; nutritional and metabolic diseases; mental and behavioral disorders; neurological diseases; eye and ocular adnexal diseases; circulatory diseases; respiratory diseases; digestive diseases; skin and subcutaneous tissue diseases; musculoskeletal system and connective tissue diseases; and teratosis or deformities, and chromosomal aberration.

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

Abstract: Provided is a display device. The display device includes a first base portion, a second base portion facing the first base portion, a light emitting layer disposed on one surface of the first base portion and emitting first light, a first wavelength conversion pattern disposed on the light emitting layer and converting the first light into second light having a different wavelength from the first light, a first color filter overlapping the first wavelength conversion pattern on one surface of the second base portion and spaced apart from the first wavelength conversion pattern, and an air layer interposed between the first wavelength conversion pattern and the first color filter.

Abstract: A coil component includes a body having a first surface, a coil including a coil pattern having a plurality of turns, a first and second lead-out portions disposed in the body and connected to one end and the other end of the coil, respectively, a first and second dummy lead-out portions disposed in the body and spaced apart from the coil, a first and second external electrodes disposed on the first surface of the body and connected to the first and second lead-out portions, respectively. A coil pattern closest to the first surface among the coil patterns disposed in a region between the first lead-out portion and the first dummy lead-out portion is connected to the first lead-out portion.

Abstract: An apparatus for manufacturing a semiconductor device includes: a process chamber including a plasma processing space; and a substrate supporter arranged in the process chamber and configured to support a substrate, wherein the substrate supporter includes: a base including a plurality of lift pin holes, each configured to accommodate a lift pin; and a seal band having a ring shape and protruding from the base, the seal band having an inner diameter that is less than a pitch circle diameter of the plurality of lift pin holes.

Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.

Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract: There is provided an apparatus for measuring a warpage characteristic of a specimen, the apparatus including: a light irradiating unit irradiating light toward the specimen; alight transmitting member transmitting the light irradiated by the light irradiating unit therethrough and including a reference lattice pattern to allow a shadow to be formed on the specimen; a sensing unit sensing the shadow formed on the specimen by the reference lattice pattern; and a heating plate disposed under the light transmitting member and heating the specimen mounted thereon, wherein the reference lattice pattern formed on the light transmitting member is formed of a conductive material and is connected to a power supplying unit to thereby generate heat when power is supplied.

Abstract: Disclosed herein are an apparatus and method for measuring characteristics of multi-layered thin films.

Abstract: There is provided a multi-beam laser apparatus including: a laser beam source generating a beam; an incident lens disposed on a path of the beam; a beam splitter splitting the beam incident on the incident lens into a plurality of beamlets; and a beam path adjustor disposed on each of paths of the split beamlets to change the respective paths of the split beamlets. The multi-beam laser apparatus easily produces a plurality of beamlets and adjusts paths of the beamlets obtained by a prism to improve machinability quality and uniformity.

Abstract: There is provided a method of manufacturing an optical waveguide, the method including: allowing a beam to be incident in an optical waveguide direction of an optical waveguide material; generating an optical soliton in the optical waveguide material by adjusting intensity of the incident beam according to the optical waveguide material; allowing the incident beam to be re-incident at an intensity higher than an intensity of the incident beam after checking generation of the optical soliton in the optical waveguide material; and increasing a refractive index of an optical soliton-generating area of the optical waveguide material by the re-incident beam to thereby form an optical waveguide.

Abstract: An X-ray detector includes a first substrate having a bottom surface on which a first electrode is formed. A second substrate has a top surface on which a second electrode and a polyimide layer are sequentially formed. A photoconductive layer is formed on a bottom surface of the first electrode and generates electron-hole pairs. A reflective layer is formed on a bottom surface of the photoconductive layer. A liquid crystal polymer layer is formed on a bottom surface of the reflective layer, and peaks and valleys are alternately formed on a bottom surface of the liquid crystal polymer layer. A liquid crystal layer is formed between the liquid crystal polymer layer and the polyimide layer, and liquid crystal molecules are aligned in a direction in which the peaks and valleys on the bottom surface are arranged.

Abstract: An X-ray tube is disclosed. The X-ray tube can include a cathode configured to emit electrons, an anode that has a surface arranged parallel to an emission direction of the electrons and is configured to collide with the electrons and emit X-rays, and a guide positioned between the cathode and the anode to modify the direction in which the electrons travel such that the electrons collide with the surface of the anode. The X-ray tube according to an embodiment of the invention can be used to improve the unevenness in X-ray intensity.

Abstract: A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

Abstract: A laser measuring device for precisely measuring a short distance is obtained by adding a relatively simple structure to a TOF laser measuring device that is simple and easily handled. The laser measuring device includes a light emitter, a light receiver and an optical length extender, which increases an optical path of emitted light or incident light.