Abstract: A coil component includes a body having a first surface, a coil including a coil pattern having a plurality of turns, a first and second lead-out portions disposed in the body and connected to one end and the other end of the coil, respectively, a first and second dummy lead-out portions disposed in the body and spaced apart from the coil, a first and second external electrodes disposed on the first surface of the body and connected to the first and second lead-out portions, respectively. A coil pattern closest to the first surface among the coil patterns disposed in a region between the first lead-out portion and the first dummy lead-out portion is connected to the first lead-out portion.

Abstract: An apparatus for manufacturing a semiconductor device includes: a process chamber including a plasma processing space; and a substrate supporter arranged in the process chamber and configured to support a substrate, wherein the substrate supporter includes: a base including a plurality of lift pin holes, each configured to accommodate a lift pin; and a seal band having a ring shape and protruding from the base, the seal band having an inner diameter that is less than a pitch circle diameter of the plurality of lift pin holes.

Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.

Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.

Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract: A substrate treating apparatus includes a chamber that encloses an internal space; a susceptor in a lower part of the internal space; a shower head in an upper part of the internal space and spaced above the susceptor and that includes a plurality of distribution holes; and a blocker plate assembly that comprises a body having a plurality of intake holes that divides a space between a top wall of the chamber and the shower head into an upper intake space and a lower distribution space, a ring-shaped partition rib on an upper surface of the body, and a ring-shaped distribution unit on a lower surface of the body.

Abstract: There is provided an apparatus for measuring a warpage characteristic of a specimen, the apparatus including: a light irradiating unit irradiating light toward the specimen; alight transmitting member transmitting the light irradiated by the light irradiating unit therethrough and including a reference lattice pattern to allow a shadow to be formed on the specimen; a sensing unit sensing the shadow formed on the specimen by the reference lattice pattern; and a heating plate disposed under the light transmitting member and heating the specimen mounted thereon, wherein the reference lattice pattern formed on the light transmitting member is formed of a conductive material and is connected to a power supplying unit to thereby generate heat when power is supplied.

Abstract: Disclosed herein are an apparatus and method for measuring characteristics of multi-layered thin films.

Abstract: There is provided a multi-beam laser apparatus including: a laser beam source generating a beam; an incident lens disposed on a path of the beam; a beam splitter splitting the beam incident on the incident lens into a plurality of beamlets; and a beam path adjustor disposed on each of paths of the split beamlets to change the respective paths of the split beamlets. The multi-beam laser apparatus easily produces a plurality of beamlets and adjusts paths of the beamlets obtained by a prism to improve machinability quality and uniformity.

Abstract: There is provided a method of manufacturing an optical waveguide, the method including: allowing a beam to be incident in an optical waveguide direction of an optical waveguide material; generating an optical soliton in the optical waveguide material by adjusting intensity of the incident beam according to the optical waveguide material; allowing the incident beam to be re-incident at an intensity higher than an intensity of the incident beam after checking generation of the optical soliton in the optical waveguide material; and increasing a refractive index of an optical soliton-generating area of the optical waveguide material by the re-incident beam to thereby form an optical waveguide.

Abstract: An X-ray detector includes a first substrate having a bottom surface on which a first electrode is formed. A second substrate has a top surface on which a second electrode and a polyimide layer are sequentially formed. A photoconductive layer is formed on a bottom surface of the first electrode and generates electron-hole pairs. A reflective layer is formed on a bottom surface of the photoconductive layer. A liquid crystal polymer layer is formed on a bottom surface of the reflective layer, and peaks and valleys are alternately formed on a bottom surface of the liquid crystal polymer layer. A liquid crystal layer is formed between the liquid crystal polymer layer and the polyimide layer, and liquid crystal molecules are aligned in a direction in which the peaks and valleys on the bottom surface are arranged.

Abstract: An X-ray tube is disclosed. The X-ray tube can include a cathode configured to emit electrons, an anode that has a surface arranged parallel to an emission direction of the electrons and is configured to collide with the electrons and emit X-rays, and a guide positioned between the cathode and the anode to modify the direction in which the electrons travel such that the electrons collide with the surface of the anode. The X-ray tube according to an embodiment of the invention can be used to improve the unevenness in X-ray intensity.

Abstract: A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

Abstract: A laser measuring device for precisely measuring a short distance is obtained by adding a relatively simple structure to a TOF laser measuring device that is simple and easily handled. The laser measuring device includes a light emitter, a light receiver and an optical length extender, which increases an optical path of emitted light or incident light.

Abstract: There is provided a multi-beam laser apparatus including: a laser beam source generating a beam; an incident lens disposed on a path of the beam; a beam splitter splitting the beam incident on the incident lens into a plurality of beamlets; and a beam path adjustor disposed on each of paths of the split beamlets to change the respective paths of the split beamlets. The multi-beam laser apparatus easily produces a plurality of beamlets and adjusts paths of the beamlets obtained by a prism to improve machinability quality and uniformity.

Abstract: There is provided an optical parametric oscillator capable of converting a wavelength in a broader range and generating an output beam with high efficiency. The optical parametric oscillator includes: a non-linear optical material optical parametrically converting a beam pumped from a laser; and input and output optical devices opposing each other, the input and output optical devices guiding the optical parametrically-converted beam to the non-linear optical material to oscillate, wherein the input optical device includes an input optical mirror guiding the pumping beam into the oscillator, and the output optical device includes a plurality of output optical mirrors each guiding the optical parametrically-converted beam outside the oscillator, the output optical mirrors having reflectivities different from one another with respect to a wavelength of the optical parametrically-converted beam.

Abstract: a wavelength converted laser apparatus includes a laser oscillator emitting an excitation laser beam having a first wavelength, a harmonic wave generator converting the excitation laser beam into a beam having a second wavelength lower than the first wavelength and an optical parametric oscillator converting and outputting the beam having the second wavelength into a beam having a continuously selectable specific wavelength. The optical parametric oscillator has an OPO crystal, a SHG crystal disposed at an output terminal of the optical parametric oscillator crystal to generate a second harmonic beam and a pair of high reflectivity mirrors for amplifying the beam outputted from the optical parametric oscillator.

Abstract: There is provided a method of manufacturing an optical waveguide, the method including: allowing a beam to be incident in an optical waveguide direction of an optical waveguide material; generating an optical solution in the optical waveguide material by adjusting intensity of the incident beam according to the optical waveguide material; allowing the incident beam to be re-incident at an intensity higher than an intensity of the incident beam after checking generation of the optical solution in the optical waveguide material; and increasing a refractive index of an optical solution-generating area of the optical waveguide material by the re-incident beam to thereby form an optical waveguide.