Abstract: Disclosed is a surface acoustic wave (SAW) wafer level package including a substrate, an interdigital transducer (IDT) formed on the substrate, a sidewall formed on the substrate along a periphery of the IDT, a cover formed above the sidewall and the IDT to form a hollow above the IDT with the sidewall, a connection electrode formed on the substrate, electrically connected to the IDT, and extending outward from a periphery of the sidewall, a connection terminal electrically connected to a part of the connection electrode which extends outward from the periphery of the sidewall, formed throughout one outer surface of the sidewall and one surface and a part of a top surface of the cover, and having a top surface formed to be higher than the top surface of the cover, and an organic solderability preservative (OSP) coating layer formed on at least the top surface of the connection terminal.

Abstract: A columbarium niche storage system includes a plurality of niche containers, which are stored in a three-dimensional array, one or more transportation devices that transport the niche containers, a control device that controls movements of and access to the niche containers, a storage structure that comprises storage spaces for storing the niche containers, and transportation tracks for the transportation devices, wherein the storage spaces comprise the three-dimensional array; and one or more viewing spaces. The transportation device comprises a horizontal linear movement device and a vertical linear movement device. The transportation device retrieves the niche container that was requested by a user of the viewing space from the storage space of the niche container and positions it into the viewing space for viewing by the user.

Abstract: A surface acoustic wave wafer-level package includes a substrate, an interdigital transducer (IDT) electrode formed on the substrate, a connection electrode electrically connected to the IDT electrode, a side wall formed on the substrate and outside the IDT electrode, a cover formed above the side wall and the IDT electrode to form a cavity, together with the side wall, on the IDT electrode, a connection terminal electrically connected to the connection electrode and protruding above the cover, a first reinforcement layer formed on the cover to at least partially overlap the cavity in a vertical direction, a second reinforcement layer formed to cover the cover and the first reinforcement layer and having holes formed in a portion corresponding to the connection terminal and a portion corresponding to the first reinforcement layer, and bumps formed in the respective holes of the second reinforcement layer to protrude above the second reinforcement layer.

Abstract: A storage system includes storage modules, which are stored in a three-dimensional array, transportation devices that transport the storage modules, a control device that controls movements of and access to the storage modules and a storage structure that includes storage spaces for storing the storage modules, and transportation tracks for the transportation devices. The storage spaces comprise the three-dimensional array. The transportation device includes a horizontal linear movement device, a horizontal rotational movement device and a vertical linear movement device. The horizontal rotational movement device rotates the storage module during when the horizontal linear movement device moves the storage module.

Abstract: A mechanized parking structure includes a plurality of vehicle carrying pallets, a plurality of parking stalls in which the vehicle carrying pallets are stored and a plurality of electric charging devices. The electric charging device includes a pallet-side electric contact device and a stall-side electric contact device, which engages with the pallet-side electric contact device when the vehicle carrying pallet is stored in the parking stall whereby electric circuit is established. Multiple physical contacts are established between the pallet-side electric contact device and the stall-side electric contact device when the electric circuit is established. The electric contact device includes multiple contact segments and springs that are compressed by the contact segments. The physical contacts are established by the movement of the vehicle carrying pallet in to the parking stall and broken by the movement of the vehicle carrying pallet out of the parking stall.

Abstract: An automated parking structure includes a car load bay, a plurality of parking stalls, a car wash compartment, a transport mechanism transporting a car to a designated location in the parking structure and a pallet that is adapted to carry a car thereon. The designated location includes the car load bay, one of the parking stalls and the car wash compartment. The transport mechanism includes a horizontal transport device that transports the pallet horizontally, and a vertical transport device that transports the pallet vertically. The horizontal transport device moves the pallet into and out of the car wash compartment.

Abstract: A mechanized parking structure includes a plurality of vehicle carrying pallets, a plurality of parking stalls in which the vehicle carrying pallets are stored and a plurality of electric charging devices. The electric charging device includes a pallet-side electric contact device and a stall-side electric contact device, which engages with the pallet-side electric contact device when the vehicle carrying pallet is stored in the parking stall whereby electric circuit is established. Multiple physical contacts are established between the pallet-side electric contact device and the stall-side electric contact device when the electric circuit is established. The electric contact device includes multiple contact segments and springs that are compressed by the contact segments. The physical contacts are established by the movement of the vehicle carrying pallet in to the parking stall and broken by the movement of the vehicle carrying pallet out of the parking stall.

Abstract: A method of forming a conductive pattern of a semiconductor device includes forming a conductive layer is on a substrate, forming a polishing protection layer on the substrate including over the conductive layer, and forming a step compensation layer on the polishing protection layer to reduce the step presented by the layer that is the polishing protection layer. The conductive layer is the exposed by removing select portions of the step compensation layer and the polishing protection layer. The conductive pattern is ultimately formed on the substrate by etching the exposed conductive layer. By planarization the intermediate structure several times once the step compensation layer is formed, a highly uniform conductive layer is sure to be formed.

Abstract: A method of fabricating a non-volatile memory device includes the steps of forming a lower conductive layer on a substrate, forming a lower and an upper sacrificial patterns on the substrate with the lower conductive layer, wherein the lower and upper sacrificial patterns include a trench exposing the lower conductive layer, forming mask spacers on sidewalls of the upper and lower sacrificial patterns, using the mask spacers and the upper sacrificial pattern as an etch mask, etching the exposed lower conductive layer to form a lower conductive pattern exposing the substrate, forming a plug conductive layer covering an entire surface of a substrate with the lower conductive pattern, and planarizingly etching the plug conductive layer until the lower sacrificial pattern is exposed, thereby forming a source plug in a gap region between the mask spacers that is connected to the substrate.

Abstract: A method of forming a conductive pattern of a semiconductor device includes forming a conductive layer is on a substrate, forming a polishing protection layer on the substrate including over the conductive layer, and forming a step compensation layer on the polishing protection layer to reduce the step presented by the layer that is the polishing protection layer. The conductive layer is the exposed by removing select portions of the step compensation layer and the polishing protection layer. The conductive pattern is ultimately formed on the substrate by etching the exposed conductive layer. By planarization the intermediate structure several times once the step compensation layer is formed, a highly uniform conductive layer is sure to be formed.

Abstract: A method of fabricating a non-volatile memory device includes the steps of forming a lower conductive layer on a substrate, forming a lower and an upper sacrificial patterns on the substrate with the lower conductive layer, wherein the lower and upper sacrificial patterns include a trench exposing the lower conductive layer, forming mask spacers on sidewalls of the upper and lower sacrificial patterns, using the mask spacers and the upper sacrificial pattern as an etch mask, etching the exposed lower conductive layer to form a lower conductive pattern exposing the substrate, forming a plug conductive layer covering an entire surface of a substrate with the lower conductive pattern, and planarizingly etching the plug conductive layer until the lower sacrificial pattern is exposed, thereby forming a source plug in a gap region between the mask spacers that is connected to the substrate.