Abstract: The present invention relates to an auxiliary precursor, a thin film precursor composition, a method of forming a thin film using the thin film precursor composition, and a semiconductor substrate fabricated using the method. The present invention provides the thin film precursor composition including a thin film precursor compound and a compound having a predetermined structure that exhibits reaction stability as the auxiliary precursor. By using the thin film precursor composition in a thin film deposition process, side reactions may be suppressed, and thin film growth rate may be appropriately controlled. In addition, since process by-products are removed from a thin film, even when a thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved.

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: The present invention relates to a growth inhibitor for forming a pellicle-protective thin film, a method of forming a pellicle-protective thin film using the growth inhibitor, and a mask fabricated by the method. More particularly, the growth inhibitor for forming a pellicle-protective thin film according to the present invention is a compound presented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: The present invention relates to a precursor for forming a thin film. The precursor is in a liquid state under conditions of 20° C. and 1 bar and includes 20 to 100% by weight of a coordination compound represented by Chemical Formula 1 below and 0 to 80% by weight of an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms: [Chemical Formula 1] MXnLmYz. M is niobium, tungsten, or molybdenum; X is a halogen element; n is 1 to 6; L is an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms, or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and substituted with one or more nitrogen, oxygen, phosphorus, or sulfur atoms; m is 1 to 3; bonded Y is an amine; z is an integer from 0 to 4; and n+z is 3 to 6.

Abstract: An electronic device includes a substrate. A lower electrode is disposed on the substrate and has a flat portion and protrusions. An intermediate layer is on the lower electrode. An upper electrode is on the intermediate layer. The lower electrode includes an alloy of a first metal and a second metal. The protrusions have a content ratio of the second metal higher than that of the flat portion.

Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.