Abstract: A reaction kettle cleaning apparatus, includes a kettle body and a stirrer, the stirrer being located in the kettle body and including a stirring rod and a stirring portion, where a movable frame is disposed on the stirring rod and is movable along the stirring rod; and a cleaning device is disposed on the movable frame is configured to clean the kettle body; and the reaction kettle cleaning apparatus further includes a movable control apparatus configured to control the movable frame to move.

Abstract: A disassembling and discharging device for battery recycling includes a crushing assembly, a high pressure tank, at least one pressure relief tank, and a filtering tank. The crushing assembly is provided with a first feed port and a first discharge port communicated with the first feed port; the high pressure tank is provided with a first inner cavity for containing discharging liquid, and the first inner cavity is communicated with the first discharge port; the pressure relief tank is provided with a second inner cavity, and the second inner cavity is communicated with the first inner cavity; and the filtering tank is provided with a third inner cavity, and the third inner cavity is communicated with the second inner cavity.

Abstract: A gas absorption box includes a box body, at least one gas absorption member and an outer housing assembly, the box body has an accommodating cavity; the gas absorption member is elastic and is provided with a first inner cavity, and the first inner cavity is in communication with the outside of the box body; and the outer housing assembly is arranged in the accommodating cavity and is elastically connected to the box body, and the outer housing assembly has a second inner cavity for accommodating a gas absorbent, the second inner cavity being in communication with the first inner cavity, and the gas absorption member being capable of absorbing gas for the second inner cavity. When battery powder or some positive-electrode materials for batteries are transported, hydrogen generated by the battery powder or some positive-electrode materials for batteries gathers towards the upper portion of a ton bag.

Abstract: The present invention provides a CMOS inverter and array substrate. The CMOS inverter comprises a P-type low-temperature polysilicon thin film transistor electrically coupled to a N-type metal-oxide thin film transistor; the P-type low-temperature polysilicon thin film transistor and the N-type metal-oxide thin film transistor satisfy the relationship: C n ? W n L n ? ? n = C P ? W P L P ? ? P ; wherein, Cn and CP is a gate-insulating-layer capacitance of the N-type metal oxide TFT and the P-type low-temperature polysilicon TFT, respectively, W n L n ? ? and ? ? W P L P is a channel width-length ratio of the N-type metal-oxide TFT and the P-type low-temperature polysilicon TFT, respectively, ?n and ?P is a mobility of the N-type metal-oxide TFT and P-type low-temperature polysilicon TFT. The performance of the CMOS inverter could be improved and the manufacturing complexity and cost of the CMOS could be reduced.

Abstract: The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.

Abstract: The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.