Abstract: The present invention provides a CMOS inverter and array substrate. The CMOS inverter comprises a P-type low-temperature polysilicon thin film transistor electrically coupled to a N-type metal-oxide thin film transistor; the P-type low-temperature polysilicon thin film transistor and the N-type metal-oxide thin film transistor satisfy the relationship: C n ? W n L n ? ? n = C P ? W P L P ? ? P ; wherein, Cn and CP is a gate-insulating-layer capacitance of the N-type metal oxide TFT and the P-type low-temperature polysilicon TFT, respectively, W n L n ? ? and ? ? W P L P is a channel width-length ratio of the N-type metal-oxide TFT and the P-type low-temperature polysilicon TFT, respectively, ?n and ?P is a mobility of the N-type metal-oxide TFT and P-type low-temperature polysilicon TFT. The performance of the CMOS inverter could be improved and the manufacturing complexity and cost of the CMOS could be reduced.

Abstract: The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.

Abstract: The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.