Abstract: The present invention relates to a semiconductor device and a semiconductor material, and more specifically, to an organic semiconductor thin film transistor having a vertical structure, a fusion device of an optical semiconductor material, and a method of manufacturing the same, provides a vertical organic transistor including a substrate, a first electrode layer formed on the substrate, a lower charge transport layer formed on the first electrode layer, a photosensitive layer formed on the lower charge transport layer, an upper charge transport layer formed on the photosensitive layer, a second electrode layer including a base electrode formed on the upper charge transport layer, a plurality of pinholes formed in the base electrode and configured to provide a movement path of charges, and a metal oxide layer surrounding a surface of the base electrode and the pinholes, an organic active layer formed on the second electrode layer, and a third electrode layer formed on the organic active layer.

Abstract: The present invention relates to a polar functional group-partially introduced polymer, a preparation method therefor, and an organic electronic element adopting the same. The organic electronic element of the present invention has excellent photoelectric conversion efficiency and stability and is very advantageous in commercialization, by adopting the polar functional group-partially introduced polymer of the present invention.

Abstract: Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.

Abstract: Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.

Abstract: The present invention relates to a polar functional group-partially introduced polymer, a preparation method therefor, and an organic electronic element adopting the same. The organic electronic element of the present invention has excellent photoelectric conversion efficiency and stability and is very advantageous in commercialization, by adopting the polar functional group-partially introduced polymer of the present invention.

Abstract: Provided are a mixed metal halide perovskite compound, and an electronic device including the same, wherein the mixed metal halide perovskite compound includes an organic cation, two or more kinds of metal cations, and a halogen anion.

Abstract: Provided are a mixed metal halide perovskite compound, and an electronic device including the same, wherein the mixed metal halide perovskite compound includes an organic cation, two or more kinds of metal cations, and a halogen anion.